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    Toshiba America Electronic Components 2SK30ATM-R(F)

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    Quest Components 2SK30ATM-R(F) 1,131
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    2SK30ATM Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK30ATM Toshiba Field Effect Transistor Silicon N Channel Junction Type Original PDF
    2SK30ATM Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK30ATM Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK30ATM Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK30ATM Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK30ATM Unknown FET Data Book Scan PDF
    2SK30ATM Toshiba FET Scan PDF
    2SK30ATM Toshiba Silicon N channel field effect transistor for low noise pre-amplifier, tone control amplifier and DC-AC high input impedance amplifier circuit applications Scan PDF
    2SK30ATM Toshiba Junction FETs Scan PDF
    2SK30ATM-G Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK30ATMGR Toshiba TRANS JFET N-CH -5MA 3(2-5F1C) Original PDF
    2SK30ATMO Toshiba TRANS JFET N-CH -5MA 3(2-5F1C) Original PDF
    2SK30ATM-O Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK30ATM-R Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK30ATMR Toshiba Silicon N-Channel Junction Transistor Scan PDF
    2SK30ATMY Toshiba TRANS JFET N-CH -5MA 3(2-5F1C) Original PDF
    2SK30ATM-Y Unknown Shortform Datasheet & Cross References Data Short Form PDF

    2SK30ATM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK30ATM-O Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		2SK30ATM-O PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK30ATM Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Í I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)6.5m


    Original     		2SK30ATM PDF

    2SK30ATM Y

    Abstract: 2SK30ATM 0 2sk30atm
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK30ATM SC-43 2SK30ATM Y 2SK30ATM 0 2sk30atm PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK30ATM-R Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		2SK30ATM-R PDF

    2SK30ATM

    Abstract: 2SK30ATM Y 2SK30ATM 0 2SK30A
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK30ATM SC-43 2SK30ATM 2SK30ATM Y 2SK30ATM 0 2SK30A PDF

    2sk170 FET

    Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
    Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch


    Original     		2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK30ATM-GR Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		2SK30ATM-GR PDF

    2SK30ATM

    Abstract: 2SK30ATM Y 2SK30ATM 0
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK30ATM 2SK30ATM 2SK30ATM Y 2SK30ATM 0 PDF

    2SK30ATM

    Abstract: 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK30ATM SC-43 2SK30ATM 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK30ATM-Y Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		2SK30ATM-Y PDF

    2SK30A

    Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK30ATM 2SK30A 2SK30ATM 2SK30ATM Y 2SK30ATM 0 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 QA T M Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS .5.1 M AX. • High Breakdown Voltage : V q d s = —50V


    OCR Scan     		2SK30ATM --50V PDF

    2SK30A

    Abstract: 2SK30ATM 0 2SK30ATM
    Text: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : V jß g = —50V


    OCR Scan     		2SK30ATM 100kn, 120Hz) SC-43 100kO 2SK30A 2SK30ATM 0 2SK30ATM PDF

    2SK30A

    Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
    Text: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. High Breakdown Voltage : V Gj g = —50 V


    OCR Scan     		2SK30ATM 100ka, 100ka 2SK30A 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM PDF

    2SK241 Equivalent FET

    Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
    Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo


    OCR Scan     		OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • High Breakdown Voltage : VGj g = —50V


    OCR Scan     		2SK30ATM 100kn, 120Hz) PDF

    TOSHIBA 2SK30ATM

    Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0
    Text: TO SH IBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : VGD g = —50V


    OCR Scan     		2SK30ATM 100kn, 120Hz) SC-43 TOSHIBA 2SK30ATM 2SK30ATM 2SK30ATM Y 2SK30ATM 0 PDF

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 PDF

    ISS226

    Abstract: ISV99 2sk117 ISV128 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier
    Text: TOSHIBA {DI SCRE TE /O PT O} Sb D E ^ T D T T E S D □□□7103 / Í 9097250 '-L ^ TOSHIBA DI S C R E T E /O P T O 5bC 0 7 T Q 3 D'^. ¿ . c; . . V FET Type Application Electrical characteristic (Ta *= 25°C) V d sx V V * * gdo grd * Ig , I d * (mA) Po(mW)


    OCR Scan     		2SK208 2SK30ATM 2SK209 2SK210 2SK211 2SK117 2SK161 2SK241 ISV128 ISS226 ISV99 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier PDF

    2sj111 fet

    Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110
    Text: ufcUM -3 o to 3: O a to N ro cn o > JUNCTION FET < |Yfs| T Y P . (MIN. IDSS Type No. A p p lic a t io n N-Channel General Purpose P-Channel V GDS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) NF M AX. Crss T Y P . V DS V GS V (mS) (V) (V) (pF) (V) d S F (MHz)


    OCR Scan     		2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 2SK369 2SK373 2SJ74 2sj111 fet 2SJ111 2SK30A 2SJ110 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    2SK520

    Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
    Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id


    OCR Scan     		2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK521 100MHZ 2SK522 20mVmax 2SK523 2SK520 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43 PDF

    ISS226

    Abstract: ISS184 ISV128 fet 2sK161 Low frequency amplifier ISV99 2SK117 2SK30ATM 2sk241 mos fet ISS181
    Text: Sb TOSHIBA íDISCRET E/O PTO> 9097250 '•i, D I S C R E T E / OPTO _ 5bC TOSHIBA Di f1| c] 0 ci 7 e S D 07 103 □□□71D3 D 0 3 - ° ^ .c; . V FET - _ A p plication Typ e Low frequency amplifier Low noise low 2SK 209 frequency amplifier FM R F


    OCR Scan     		1017ESD DDD71G3 2SK208 2SK30ATM 2SK209 2SK117 2SK210 2SK192A 2SK211 2SK161 ISS226 ISS184 ISV128 fet 2sK161 Low frequency amplifier ISV99 2SK117 2SK30ATM 2sk241 mos fet ISS181 PDF