Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK117 Search Results

    2SK117 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1170 Renesas Electronics Corporation Nch Single Power Mosfet 500V 20A 270Mohm To-3P Visit Renesas Electronics Corporation
    2SK1170-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 20A 270Mohm To-3P Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK117 Price and Stock

    Others 2SK1178

    2SK1178
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1178 8
    • 1 $12
    • 10 $9
    • 100 $9
    • 1000 $9
    • 10000 $9
    		Buy Now

    Renesas Electronics Corporation 2SK1170-E

    Trans MOSFET N-CH 500V 20A 3-Pin TO-3P Tube (Alt: 2SK1170-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia 2SK1170-E 18 Weeks 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Toshiba America Electronic Components 2SK117

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    New Advantage Corporation 2SK117 88 1
    • 1 $12
    • 10 $12
    • 100 $12
    • 1000 $12
    • 10000 $12
    		Buy Now

    2SK117 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK117 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK117 Unknown FET Data Book Scan PDF
    2SK117 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK117 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK117 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK117 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK117 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK117 Toshiba N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) Scan PDF
    2SK117 Toshiba Junction FETs Scan PDF
    2SK117 Toshiba N-Channel MOSFET Scan PDF
    2SK1170 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1170 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1170 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1170 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1170 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1170 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1170 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1170 Unknown FET Data Book Scan PDF
    2SK1170 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1170 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SK117 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1177

    Abstract: FM20
    Text: 2SK1177 External dimensions 1.FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±2.5 A I DSS A VTH 2.0 30 (Tc = 25ºC) W Re (yfs) 1.5 ±10 (Tch ID (pulse) PD 150ºC)


    Original     		PDF 2SK1177 2SK1177 FM20

    2SK1177

    Abstract: FM20
    Text: 2SK1177 External dimensions 1.FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS (Ta = 25ºC) Ratings typ min Unit max 500 V Conditions I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA


    Original     		PDF 2SK1177 2SK1177 FM20

    2SK1170

    Abstract: 2SK1169 DSA003638
    Text: 2SK1169, 2SK1170 Silicon N-Channel MOS FET ADE-208-1254 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK1169, 2SK1170 ADE-208-1254 2SK1169 2SK1170 2SK1169 DSA003638

    2SK117

    Abstract: 2SK117 gr TOSHIBA 2SK117
    Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High |Yfs|: |Yfs| = 15 mS typ. (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)


    Original     		PDF 2SK117 2SK117 2SK117 gr TOSHIBA 2SK117

    2SK1179

    Abstract: FM20 on10m
    Text: 2SK1179 External dimensions 2 . FM100 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol (Ta = 25ºC) Ratings typ min Unit max VDSS 500 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V


    Original     		PDF 2SK1179 FM100 2SK1179 FM20 on10m

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    2SK1178

    Abstract: FM20
    Text: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±4.0 A I DSS A VTH 2.0 35 (Tc = 25ºC) W Re (yfs) 2.4 ±16 (Tch ID (pulse) PD 150ºC)


    Original     		PDF 2SK1178 2SK1178 FM20

    2sk129

    Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119


    Original     		PDF 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131

    2SK1169

    Abstract: 2SK1170 Hitachi DSA003756
    Text: 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P


    Original     		PDF 2SK1169, 2SK1170 2SK1169 2SK1169 2SK1170 Hitachi DSA003756

    2SK117

    Abstract: 2SK117 gr TOSHIBA 2SK117 2sk1173 TRANSISTOR 2SK117
    Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High |Yfs|: |Yfs| = 15 mS typ. (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.)


    Original     		PDF 2SK117 SC-43 2SK117 2SK117 gr TOSHIBA 2SK117 2sk1173 TRANSISTOR 2SK117

    2SK1178

    Abstract: FM20
    Text: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol (Ta = 25ºC) Ratings typ min Unit max VDSS 500 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V


    Original     		PDF 2SK1178 FM100 2SK1178 FM20

    Untitled

    Abstract: No abstract text available
    Text: 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1


    Original     		PDF 2SK1169, 2SK1170 2SK1169

    2SK1179

    Abstract: No abstract text available
    Text: 2SK1179 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS (Ta = 25ºC) Ratings typ min Unit max 500 Conditions V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500


    Original     		PDF 2SK1179 FM100 2SK1179

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P


    Original     		PDF 2SK1169, 2SK1170 2SK1169 2SK1170 D-85622 Hitachi DSA002780

    2sk117

    Abstract: 2SK1173 2SK117 gr TOSHIBA 2SK117
    Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High |Yfs|: |Yfs| = 15 mS typ. (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)


    Original     		PDF 2SK117 2sk117 2SK1173 2SK117 gr TOSHIBA 2SK117

    2SC1815

    Abstract: 2sk117 1D4B42 2SK30ATM 6D4B41 2SC185 k 513 2SC521A 2SD867 3D4B41
    Text: [8] 4. 電源回路 4.1 高安定基準電源回路 Vin = 15 V~40 V RD FET の PD 制限 2SK117 RS ↓ Iz ~ − 6 mA → ∆ID ∼ −零 ∆Ta Vout 02CZ5.1-Y 定電圧電源回路 (1) 12 V, 50 mA Vo = 2 V (0~50 mA) 200 µF 2.2 kΩ 1 kΩ 02CZ6.8 Vi = 16 ± 2 V


    Original     		PDF 2SK117 02CZ5 02CZ6 2SC1815 2SC3419 2SC521A 2SC1815 2sk117 1D4B42 2SK30ATM 6D4B41 2SC185 k 513 2SC521A 2SD867 3D4B41

    2sk170 FET

    Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
    Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch


    Original     		PDF 2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14

    2SK1178

    Abstract: FM20
    Text: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS (Ta = 25ºC) Ratings typ min Unit max 500 V Conditions I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500


    Original     		PDF 2SK1178 2SK1178 FM20

    2SK117

    Abstract: 2SK117 gr
    Text: T O S H IB A 2SK117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 LOW NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm . 5.1 MAX. • High |Yfe| : IYfs| = 15mS Typ. (VDS = 10V, v Gs = o) • High Breakdown Voltage 0-45 : V g d S = - 50V


    OCR Scan     		PDF 2SK117 2SK117 2SK117 gr

    2SK117

    Abstract: TOSHIBA 2SK117 TRANSISTOR 2SK117
    Text: 2SK117 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 LOW NOISE AUDIO AMPLIFIER APPLICATIONS U n it in mm 5.1 MAX. • H igh |Yfc| : |Yfs | = 15mS Typ. (VDS = 10V, V g s = 0) • H igh Breakdown Voltage • VGDS= - 50V


    OCR Scan     		PDF 2SK117 2SK117 TOSHIBA 2SK117 TRANSISTOR 2SK117

    2SK117

    Abstract: TOSHIBA 2SK117 TRANSISTOR 2SK117
    Text: 2SK117 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS 5.1 MAX. : |Yfs| = 15mS Typ. • High |Yfs| • • High Breakdown Voltage • VGDS= - 50V : NF = l.OdB (Typ.) (VDg = 10V,


    OCR Scan     		PDF 2SK117 2SK117 TOSHIBA 2SK117 TRANSISTOR 2SK117

    2SK241 Equivalent FET

    Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
    Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo


    OCR Scan     		PDF OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf

    Untitled

    Abstract: No abstract text available
    Text: TO S H IBA 2SK117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS . 5.1 MAX. : |Yfs| = 15mS Typ. (VDS = 10V, VGS = 0) • High |Yfs| • • High Breakdown Voltage : V g d S = - 50V


    OCR Scan     		PDF 2SK117

    Untitled

    Abstract: No abstract text available
    Text: 2SK1169, 2SK1170 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan     		PDF 2SK1169, 2SK1170