2SK161

Abstract: 2SK161GR vI652
Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)

Contextual Info: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm — NF = 2.5dB Typ. (f = 100MHz) Low Noise Figure • High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)

Contextual Info: 2SK1613 Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 ■ Absolute Maximum Ratings Tc = 25˚C Symbol Rating VDSS 900 V Gate-Source voltage VGSS ±30 V DC ID ±5 A Pulse IDP ±10 A EAS * 45 mJ Avalanche energy capability

Hitachi DSA002780

Contextual Info: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline

Contextual Info: Power F-MOS FETs 2SK1612 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply)

Contextual Info: Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply, AC adaptor)

2SK1610

Abstract: SC-65 2SK161-0
Contextual Info: Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic unit: mm 15.0±0.5 500 V VGSS ±30 V DC ID ±13 A Pulse IDP ±26 A EAS*

2SK1613

Abstract: SC-65 2sk16
Contextual Info: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 V ID Pulse IDP ±5 A ±10 A EAS* Avalanche energy capacity

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

Hitachi DSA00279

Contextual Info: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline

2SK161

Abstract: TA2024 2SK1610 2SK161GR
Contextual Info: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 4 .2 M A X . — 1 1 1 I 1 : NF = 2.5dB Typ. (f = 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)

2SK1572

Abstract: 2SK1618 Hitachi DSA00347
Contextual Info: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline

Contextual Info: 2SK1610 Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 ■ Absolute Maximum Ratings Tc = 25˚C Symbol Rating VDSS 500 V Gate-Source voltage VGSS ±30 V DC ID ±13 A Pulse IDP ±26 A EAS * 170 mJ Avalanche energy capability

2SK1613

Contextual Info: Panasonic Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)

Contextual Info: T O SH IB A 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm 4 .2 M A X. : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)

Contextual Info: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

2SK1613

Abstract: SC-65 MJ 1502 S
Contextual Info: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 900 V VGSS ±30 V DC ID ±5 A Pulse

2SK192

Abstract: 2SK192 fet 2SK160A 2SK185 2sk180 2sk163 nec 2SK191 2sk163 nec 2sk163 2sk183
Contextual Info: - 36 - m f =e M £ 2SK160A tt NEC 2SK161 € ffl m m ftt & V* K V *:ft * LF/VHF A J N D -50 GDO FM/VHF RF J N D -18 GDO A 3: ft -50 0 (V) S fé i* (A) X P d/P c h Ig s s (max) ft (W) (A) Vg s (V) Sa M (min) (max) Vd s (A) (A) (V) 4# (Ta=25°C) 1* (min) (max) V d s

2SK1614

Contextual Info: Panasonic Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss, 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)

MJ 800

Contextual Info: P o w e r F -M O S Panasonic F E T s 2SK1611 Silicon N-Channel Power F-MOS I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator, AC adaptor)

Contextual Info: 2SK1611 Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS Unit : mm avalanche energy capability ● High-speed 4.2±0.2 7.5±0.2 RDS on , high-speed switching characteristic • Applications ø3.1±0.1 switching (switching mode regulator, AC adaptor)

Contextual Info: Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 4.0±0.1 4.5±0.2 900 V VGSS ±30

Hitachi DSA00276

Contextual Info: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET ADE-208-1297 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

2SK1610

Abstract: SC-65 M-J58 2sk16
Contextual Info: Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic M Di ain sc te on na tin nc ue e/ d unit: mm 4.0±0.1 V Pulse IDP ±13