2SK30AY
Abstract: 2SK30A-Y
Text: 2SK30A-Y Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)
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2SK30A-Y
2SK30AY
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Untitled
Abstract: No abstract text available
Text: 2SK30ATM-O Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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2SK30ATM-O
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2SK30A
Abstract: 2SK30A-O
Text: 2SK30A-O Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)
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2SK30A-O
2SK30A
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2SK30A-GR
Abstract: No abstract text available
Text: 2SK30A-GR Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)
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2SK30A-GR
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Untitled
Abstract: No abstract text available
Text: 2SK30ATM Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Í I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)6.5m
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2SK30ATM
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2SK30ATM Y
Abstract: 2SK30ATM 0 2sk30atm
Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)
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2SK30ATM
SC-43
2SK30ATM Y
2SK30ATM 0
2sk30atm
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2sk30a
Abstract: No abstract text available
Text: 2SK30A-R Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)
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2SK30A-R
2sk30a
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Untitled
Abstract: No abstract text available
Text: 2SK30ATM-R Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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2SK30ATM-R
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2SK30ATM
Abstract: 2SK30ATM Y 2SK30ATM 0 2SK30A
Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)
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2SK30ATM
SC-43
2SK30ATM
2SK30ATM Y
2SK30ATM 0
2SK30A
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2sk170 FET
Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch
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2SK246
2SJ103
2SK117
2SK362
2SK363
2SK364
2SJ104
2SK30ATM
2SK170
2SJ74
2sk170 FET
Junction-FET
fet to92
2SK118
2SJ74
2sk879
2sj105
2SJ14
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Untitled
Abstract: No abstract text available
Text: 2SK30ATM-GR Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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2SK30ATM-GR
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2SK30ATM
Abstract: 2SK30ATM Y 2SK30ATM 0
Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)
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2SK30ATM
2SK30ATM
2SK30ATM Y
2SK30ATM 0
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2SK30ATM
Abstract: 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)
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2SK30ATM
SC-43
2SK30ATM
2SK30A
2SK30ATM Y
2SK30ATM 0
TOSHIBA 2SK30ATM
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2SK30A
Abstract: No abstract text available
Text: 2SK30A Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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2SK30A
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2SK30A
Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0
Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)
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2SK30ATM
2SK30A
2SK30ATM
2SK30ATM Y
2SK30ATM 0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 QA T M Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS .5.1 M AX. • High Breakdown Voltage : V q d s = —50V
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2SK30ATM
--50V
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2SK30A
Abstract: 2SK30ATM 0 2SK30ATM
Text: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : V jß g = —50V
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2SK30ATM
100kn,
120Hz)
SC-43
100kO
2SK30A
2SK30ATM 0
2SK30ATM
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2SK30ATM 0
Abstract: 2SK30ATM TOSHIBA 2SK30ATM
Text: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. • High Breakdown Voltage : V Gj g = —50 V
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2SK30ATM
100ka,
100ka
2SK30ATM 0
TOSHIBA 2SK30ATM
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2SK30A
Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
Text: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. High Breakdown Voltage : V Gj g = —50 V
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2SK30ATM
100ka,
100ka
2SK30A
2SK30ATM
2SK30ATM Y
2SK30ATM 0
TOSHIBA 2SK30ATM
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2SK241 Equivalent FET
Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo
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OT-23MOD,
OT-143MOD)
2SK208
2SK209
2SK210
2SK211
2SK302
2SK368
2SK1062
2SK1771
2SK241 Equivalent FET
2SK117 equivalent
200 Amp mosfet
k 2545 MOSFET
3sk fet
2SK192A equivalent
2SK241 equivalent
tv ic equivalent
2SK161 equivalent
gaas fet vhf uhf
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2SK44SP
Abstract: C1458 2SK30AY 2SK30A-Y 2SK30A ScansU9X24 2SC536 2SC536SP 2SC536SP E 10-KB
Text: BLU- FEEDBACK 10KB INPUT S -0 O 6 P 1C 101^104 : m C1458 Q 10KV104 :2SK30AYV CSELECTEÜ Q 105 :2SK44SP Q 1 0 6 ^1 0 8 :2SC536SP 0 1 0 1 ^1 0 2 : m a 150 BOTTOM V IE W ?:C 53E S P SO uPC £ £M iTT£R GAT c OPAIN ?S M *$P i . collector t BASE « t SOUP'', f
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C1458
10KV104
2SK30AYV
2SK44SP
2SC536SP
2SK30AY
2SK30A-Y
2SK30A
ScansU9X24
2SC536
2SC536SP E
10-KB
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • High Breakdown Voltage : VGj g = —50V
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2SK30ATM
100kn,
120Hz)
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TOSHIBA 2SK30ATM
Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0
Text: TO SH IBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : VGD g = —50V
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2SK30ATM
100kn,
120Hz)
SC-43
TOSHIBA 2SK30ATM
2SK30ATM
2SK30ATM Y
2SK30ATM 0
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b1375
Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39
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2N3713
2N3714
2N3715
2N3716
2N3789
2N3790
2N3791
2N3792
2N4340
2N4340S
b1375
2sk270a
2SK150A
MG15G1AL2
2SA1051b
MG50G2CL1
mg100g1al2
2SA1015
A1265N
MG100G1AL1
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