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    2SK30A Search Results

    2SK30A Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK30A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK30A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK30A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK30A Unknown Scan PDF
    2SK30A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK30A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK30A Toshiba Japanese Transistor Data Book Scan PDF
    2SK30A/G Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK30A-GR Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK30A-GR Semico N-Channel Junction Field Effect Transistors Scan PDF
    2SK30A/O Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK30A-O Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK30A-O Semico N-Channel Junction Field Effect Transistors Scan PDF
    2SK30A/R Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK30A-R Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK30A-R Semico N-Channel Junction Field Effect Transistors Scan PDF
    2SK30ATM Toshiba Field Effect Transistor Silicon N Channel Junction Type Original PDF
    2SK30ATM Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK30ATM Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK30ATM Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SK30A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK30AY

    Abstract: 2SK30A-Y
    Text: 2SK30A-Y Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)


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    PDF 2SK30A-Y 2SK30AY

    Untitled

    Abstract: No abstract text available
    Text: 2SK30ATM-O Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2SK30ATM-O

    2SK30A

    Abstract: 2SK30A-O
    Text: 2SK30A-O Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)


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    PDF 2SK30A-O 2SK30A

    2SK30A-GR

    Abstract: No abstract text available
    Text: 2SK30A-GR Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)


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    PDF 2SK30A-GR

    Untitled

    Abstract: No abstract text available
    Text: 2SK30ATM Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Í I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)6.5m


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    PDF 2SK30ATM

    2SK30ATM Y

    Abstract: 2SK30ATM 0 2sk30atm
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


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    PDF 2SK30ATM SC-43 2SK30ATM Y 2SK30ATM 0 2sk30atm

    2sk30a

    Abstract: No abstract text available
    Text: 2SK30A-R Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)


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    PDF 2SK30A-R 2sk30a

    Untitled

    Abstract: No abstract text available
    Text: 2SK30ATM-R Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2SK30ATM-R

    2SK30ATM

    Abstract: 2SK30ATM Y 2SK30ATM 0 2SK30A
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)


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    PDF 2SK30ATM SC-43 2SK30ATM 2SK30ATM Y 2SK30ATM 0 2SK30A

    2sk170 FET

    Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
    Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch


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    PDF 2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14

    Untitled

    Abstract: No abstract text available
    Text: 2SK30ATM-GR Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2SK30ATM-GR

    2SK30ATM

    Abstract: 2SK30ATM Y 2SK30ATM 0
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


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    PDF 2SK30ATM 2SK30ATM 2SK30ATM Y 2SK30ATM 0

    2SK30ATM

    Abstract: 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


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    PDF 2SK30ATM SC-43 2SK30ATM 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM

    2SK30A

    Abstract: No abstract text available
    Text: 2SK30A Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2SK30A

    2SK30A

    Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


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    PDF 2SK30ATM 2SK30A 2SK30ATM 2SK30ATM Y 2SK30ATM 0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 QA T M Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS .5.1 M AX. • High Breakdown Voltage : V q d s = —50V


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    PDF 2SK30ATM --50V

    2SK30A

    Abstract: 2SK30ATM 0 2SK30ATM
    Text: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : V jß g = —50V


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    PDF 2SK30ATM 100kn, 120Hz) SC-43 100kO 2SK30A 2SK30ATM 0 2SK30ATM

    2SK30ATM 0

    Abstract: 2SK30ATM TOSHIBA 2SK30ATM
    Text: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. • High Breakdown Voltage : V Gj g = —50 V


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    PDF 2SK30ATM 100ka, 100ka 2SK30ATM 0 TOSHIBA 2SK30ATM

    2SK30A

    Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
    Text: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. High Breakdown Voltage : V Gj g = —50 V


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    PDF 2SK30ATM 100ka, 100ka 2SK30A 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM

    2SK241 Equivalent FET

    Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
    Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo


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    PDF OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf

    2SK44SP

    Abstract: C1458 2SK30AY 2SK30A-Y 2SK30A ScansU9X24 2SC536 2SC536SP 2SC536SP E 10-KB
    Text: BLU- FEEDBACK 10KB INPUT S -0 O 6 P 1C 101^104 : m C1458 Q 10KV104 :2SK30AYV CSELECTEÜ Q 105 :2SK44SP Q 1 0 6 ^1 0 8 :2SC536SP 0 1 0 1 ^1 0 2 : m a 150 BOTTOM V IE W ?:C 53E S P SO uPC £ £M iTT£R GAT c OPAIN ?S M *$P i . collector t BASE « t SOUP'', f


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    PDF C1458 10KV104 2SK30AYV 2SK44SP 2SC536SP 2SK30AY 2SK30A-Y 2SK30A ScansU9X24 2SC536 2SC536SP E 10-KB

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • High Breakdown Voltage : VGj g = —50V


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    PDF 2SK30ATM 100kn, 120Hz)

    TOSHIBA 2SK30ATM

    Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0
    Text: TO SH IBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : VGD g = —50V


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    PDF 2SK30ATM 100kn, 120Hz) SC-43 TOSHIBA 2SK30ATM 2SK30ATM 2SK30ATM Y 2SK30ATM 0

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1