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    2SK209 Search Results

    2SK209 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2090-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2090-T2-A Renesas Electronics Corporation Power MOSFETs for Automotive, SSP, / Visit Renesas Electronics Corporation
    2SK2090(0)-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive, SSP, / Visit Renesas Electronics Corporation
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    2SK209 Price and Stock

    Toshiba America Electronic Components 2SK209-BL(TE85L,F)

    JFET N-CH 50V 14MA SC59
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    DigiKey 2SK209-BL(TE85L,F) Reel 90,000 3,000
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    2SK209-BL(TE85L,F) Cut Tape 6,741 1
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    2SK209-BL(TE85L,F) Digi-Reel 1
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    Mouser Electronics 2SK209-BL(TE85L,F) 52,867
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    TME 2SK209-BL(TE85L,F) 3,122 1
    • 1 $0.751
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    Toshiba America Electronic Components 2SK209-Y(TE85L,F)

    JFET N-CH 50V 14MA SC59
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    DigiKey 2SK209-Y(TE85L,F) Reel 18,000 3,000
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    2SK209-Y(TE85L,F) Cut Tape 5,880 1
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    • 1000 $0.16655
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    2SK209-Y(TE85L,F) Digi-Reel 1
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    Mouser Electronics 2SK209-Y(TE85L,F) 5,532
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    Rochester Electronics LLC 2SK2090-T2-A

    MOSFET N-CH 50V 100MA SC70-3 SSP
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    DigiKey 2SK2090-T2-A Bulk 9,000 1,353
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    Toshiba America Electronic Components 2SK209-GR(TE85L,F)

    JFET N-CH 50V 14MA SC59
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    DigiKey 2SK209-GR(TE85L,F) Reel 3,000 3,000
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    2SK209-GR(TE85L,F) Cut Tape 2,952 1
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    • 1000 $0.16655
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    2SK209-GR(TE85L,F) Digi-Reel 1
    • 1 $0.44
    • 10 $0.378
    • 100 $0.2624
    • 1000 $0.16655
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    Mouser Electronics 2SK209-GR(TE85L,F) 82,693
    • 1 $0.44
    • 10 $0.378
    • 100 $0.263
    • 1000 $0.167
    • 10000 $0.131
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    TME 2SK209-GR(TE85L,F) 2,315 1
    • 1 $0.746
    • 10 $0.282
    • 100 $0.224
    • 1000 $0.209
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    ROHM Semiconductor 2SK2095N

    MOSFET N-CH 60V 10A TO220FN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2095N Bulk 500
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    Find more 2SK209 price and stock on Findchips.com

    2SK209 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK209 Toshiba N-Channel MOSFET Original PDF
    2SK209 Toshiba Japanese - Transistors Original PDF
    2SK209 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK209 Unknown FET Data Book Scan PDF
    2SK209 Unknown Scan PDF
    2SK209 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK209 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK209 Toshiba Silicon N channel field effect transistor for audio frequency low noise amplifier applications Scan PDF
    2SK209 Toshiba Junction FETs / MOSFET / Transistors Scan PDF
    2SK2090 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK2090 NEC Semiconductor Selection Guide Original PDF
    2SK2090 NEC N-Channel MOS FET for High-Speed Switching Original PDF
    2SK2090-T1 NEC N-channel MOS-type silicon field effect transistor Original PDF
    2SK2090-T2 NEC N-channel MOS-type silicon field effect transistor Original PDF
    2SK2091 Sanyo Semiconductor Impedance converters, infrared sensors Original PDF
    2SK2091 Sanyo Semiconductor Transistor Selectio Guide (Short Specs) Scan PDF
    2SK2091 Sanyo Semiconductor Small Signal FETs Scan PDF
    2SK2091 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK209114 Sanyo Semiconductor TRANS JFET N-CH 30V 0.8A 3MCP Original PDF
    2SK209115 Sanyo Semiconductor TRANS JFET N-CH 30V 1.1A 3MCP Original PDF

    2SK209 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1A smd mosfet

    Abstract: 2SK2094
    Text: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2094 Features TO-252 Low on-resistance Fast switching speed +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low-voltage drive 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max


    Original     		PDF 2SK2094 O-252 1A smd mosfet 2SK2094

    TO-3P Jedec package outline

    Abstract: 2SK1911 2SK2096 DSA003639
    Text: 2SK2096 Silicon N-Channel MOS FET ADE-208-1344 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SK2096 ADE-208-1344 TO-3P Jedec package outline 2SK1911 2SK2096 DSA003639

    2SK2097

    Abstract: 2SK1402
    Text: 2SK2097 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter. 2 12


    Original     		PDF 2SK2097 220CFM 2SK1402. 2SK2097 2SK1402

    2SK245

    Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H


    Original     		PDF 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240

    2SK2099

    Abstract: No abstract text available
    Text: 2SK2099-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings K-Pack L K-Pack(S) 6.5 ±0.2 +0.2 0 .9 —0.1 0.9 2.5 ±0.5 5.5 ±0.2 5±0.2 +0.2 High speed switching Low on-resistance No secondary breakdown Low driving power


    Original     		PDF 2SK2099-01L 2SK2099

    2SK2099-01L

    Abstract: No abstract text available
    Text: 2SK2099-01L,S N-channel MOS-FET FAP-IIA Series 250V > Features - 0,85Ω 6A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2099-01L

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2096 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SK2096 D-85622 Hitachi DSA002749

    2SK2098-01M

    Abstract: 150V n-channel MOSFET 2Sk2098
    Text: 2SK2098-01M N-channel MOS-FET FAP-III Series 150V > Features - 0,08Ω 20A 50W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier


    Original     		PDF 2SK2098-01M 2SK2098-01M 150V n-channel MOSFET 2Sk2098

    2SK209

    Abstract: No abstract text available
    Text: 2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)


    Original     		PDF 2SK209 2SK209

    2SK2094

    Abstract: No abstract text available
    Text: Transistors Small switching 60V, 2A 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET


    Original     		PDF 2SK2094 2SK2094

    2SK209

    Abstract: No abstract text available
    Text: 2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.)


    Original     		PDF 2SK209 SC-59 2SK209

    K2094

    Abstract: 2SK2094
    Text: 2SK2094 Transistors 4V Drive Nch MOS FET 2SK2094 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.75 2.3 (1) (2)Drain 0.8Min. 0.65 0.9 (1)Gate 9.5 2.5 0.9 1.5 5.5 1.5 zFeatures 1) Low On-resistance. 2) Fast switching speed.


    Original     		PDF 2SK2094 K2094 K2094 2SK2094

    Untitled

    Abstract: No abstract text available
    Text: 2SK2096 Silicon N Channel MOS FET REJ03G0997-0200 Previous: ADE-208-1344 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2096 REJ03G0997-0200 ADE-208-1344) PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: 2SK2099-01 L,S FU JI F A P -IIA S e r ie s > Features - N -c h a n n e l M O S -F E T 25 0V 0 ,8 5 D 6A 20 W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof


    OCR Scan     		PDF 2SK2099-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2096 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itch in g Features • L ow on-resistance • H igh speed sw itchin g • L ow drive current • 4 V gate drive d ev ic e can be driven from 5 V source • Suitable for sw itch in g regulator, D C -D C converter


    OCR Scan     		PDF 2SK2096

    2SK2829

    Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
    Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586


    OCR Scan     		PDF 2SK2912 2SK2938 2SK2939 2SK2940 2SK2957 2SK2958 2SJ21S 2SJ217 28K1161 2SK1162 2SK2829 Spl 740 2sk1 2SK2728 28K13 2SK151

    K2094

    Abstract: No abstract text available
    Text: 2SK2094F5 Silicon N-channel MOSFET Features Dimensions Units : mm available in CPT F5 package 2SK2094 (CPT F5) package marking: K2094*Q , where ★ is hFE code and □ is lot number > +0 2 CO.5 5 * °72 01 1 -0 low on-resistance Y 0.5 ± 0.1 r fast switching speed


    OCR Scan     		PDF 2SK2094F5 K2094 2SK2094 2SK2094F5

    2SK2094F5

    Abstract: No abstract text available
    Text: b7 / T ransistors 2SK2094F5 2SK2094F5 V 1 - I > N f + *;U M O S W L % m . b T s V Z * Silicon N-channel MOSFET ^ -f 7 f - /Switching • £l-JJi'\|'j£0/D im en sio ns U n it: mm) • « * 1) 2) I S S I X < Ko 3) S O A M a I ' c 4) (4 v e it ). 5) 6) • Features


    OCR Scan     		PDF 2SK2094F5 -tm-ncn02 2SK2094F5

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK209 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K2 0 9 Unit in mm AU D IO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS High |Yfc| + 0.5 2 .5 -0 .3 : |Yfs| = 15mS Typ. at VDg = 10V, VGS = 0 + 0.25 .1 .5 -0 .1 5 High Breakdown Voltage : V<3Dg=—50V


    OCR Scan     		PDF 2SK209 --50V --30V 961001EAA2'

    2SK2098-01M

    Abstract: 2sk2098
    Text: 2SK2098-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-III SERIES • Features • • • • • • Outline Drawings High current Low on-resistance No secondary breakdown


    OCR Scan     		PDF 2SK2098-01M SC-67 20Ki2) 0GD3157 2sk2098

    Untitled

    Abstract: No abstract text available
    Text: Transistors Switching 60V, 10A 2SK2095N • F e a tu re s • E x te rn a l dim en sio n s (U n its: mm) 1 ) Low o n -resistan ce. 2 ) H igh-speed sw itch in g . 3 ) W ide SO A (safe operating are a ). 4 ) E a sily d esigned drive circu its. 5) Low VGS(th).


    OCR Scan     		PDF 2SK2095N 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    K2094

    Abstract: marking 82T 0014b34 2SK2094 2SK2094F5
    Text: 2SK2094F5 Silicon N-channel MOSFET Features Dimensions Units : mm • available in C P T F5 package • p ackage marking: K2094-A-Q, w here ★ is hFE code and □ is lot num ber • low on-resistance 2SK2094 (C PT F5) • fast switching speed • w ide S O A (S a fe O perating A rea)


    OCR Scan     		PDF 2SK2094F5 K2094 2SK2094 0G14ti3b 0014b37 marking 82T 0014b34 2SK2094 2SK2094F5

    2SK2097

    Abstract: 2sk20
    Text: 2SK2097 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • • Low on—resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter. Table 1 A bsolute M axim um R atings Ta = 25 ° C


    OCR Scan     		PDF 2SK2097 2SK1402. 2SK2097 2sk20

    Untitled

    Abstract: No abstract text available
    Text: 2SK2097 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter.


    OCR Scan     		PDF 2SK2097 O-220CFM