1A smd mosfet

Abstract: 2SK2094
Contextual Info: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2094 Features TO-252 Low on-resistance Fast switching speed +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low-voltage drive 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max

TO-3P Jedec package outline

Abstract: 2SK1911 2SK2096 DSA003639
Contextual Info: 2SK2096 Silicon N-Channel MOS FET ADE-208-1344 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

2SK2097

Abstract: 2SK1402
Contextual Info: 2SK2097 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter. 2 12

Contextual Info: 2SK2099-01 L,S FU JI F A P -IIA S e r ie s > Features - N -c h a n n e l M O S -F E T 25 0V 0 ,8 5 D 6A 20 W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

2SK2099

Contextual Info: 2SK2099-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings K-Pack L K-Pack(S) 6.5 ±0.2 +0.2 0 .9 —0.1 0.9 2.5 ±0.5 5.5 ±0.2 5±0.2 +0.2 High speed switching Low on-resistance No secondary breakdown Low driving power

2SK2099-01L

Contextual Info: 2SK2099-01L,S N-channel MOS-FET FAP-IIA Series 250V > Features - 0,85Ω 6A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK2096 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC

Hitachi DSA002749

Contextual Info: 2SK2096 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

2SK2098-01M

Abstract: 150V n-channel MOSFET 2Sk2098
Contextual Info: 2SK2098-01M N-channel MOS-FET FAP-III Series 150V > Features - 0,08Ω 20A 50W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier

2SK209

Contextual Info: 2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)

2SK2094

Contextual Info: Transistors Small switching 60V, 2A 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET

Contextual Info: 2SK2096 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itch in g Features • L ow on-resistance • H igh speed sw itchin g • L ow drive current • 4 V gate drive d ev ic e can be driven from 5 V source • Suitable for sw itch in g regulator, D C -D C converter

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

2SK2094F5

Contextual Info: b7 / T ransistors 2SK2094F5 2SK2094F5 V 1 - I > N f + *;U M O S W L % m . b T s V Z * Silicon N-channel MOSFET ^ -f 7 f - /Switching • £l-JJi'\|'j£0/D im en sio ns U n it: mm) • « * 1) 2) I S S I X < Ko 3) S O A M a I ' c 4) (4 v e it ). 5) 6) • Features

2SK209

Contextual Info: 2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.)

Contextual Info: TOSHIBA 2SK209 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K2 0 9 Unit in mm AU D IO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS High |Yfc| + 0.5 2 .5 -0 .3 : |Yfs| = 15mS Typ. at VDg = 10V, VGS = 0 + 0.25 .1 .5 -0 .1 5 High Breakdown Voltage : V<3Dg=—50V

2SK2098-01M

Abstract: 2sk2098
Contextual Info: 2SK2098-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-III SERIES • Features • • • • • • Outline Drawings High current Low on-resistance No secondary breakdown

K2094

Abstract: 2SK2094
Contextual Info: 2SK2094 Transistors 4V Drive Nch MOS FET 2SK2094 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.75 2.3 (1) (2)Drain 0.8Min. 0.65 0.9 (1)Gate 9.5 2.5 0.9 1.5 5.5 1.5 zFeatures 1) Low On-resistance. 2) Fast switching speed.

Contextual Info: 2SK2096 Silicon N Channel MOS FET REJ03G0997-0200 Previous: ADE-208-1344 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source

Contextual Info: Transistors Switching 60V, 10A 2SK2095N • F e a tu re s • E x te rn a l dim en sio n s (U n its: mm) 1 ) Low o n -resistan ce. 2 ) H igh-speed sw itch in g . 3 ) W ide SO A (safe operating are a ). 4 ) E a sily d esigned drive circu its. 5) Low VGS(th).

K2094

Abstract: marking 82T 0014b34 2SK2094 2SK2094F5
Contextual Info: 2SK2094F5 Silicon N-channel MOSFET Features Dimensions Units : mm • available in C P T F5 package • p ackage marking: K2094-A-Q, w here ★ is hFE code and □ is lot num ber • low on-resistance 2SK2094 (C PT F5) • fast switching speed • w ide S O A (S a fe O perating A rea)

2SK2097

Abstract: 2sk20
Contextual Info: 2SK2097 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • • Low on—resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter. Table 1 A bsolute M axim um R atings Ta = 25 ° C

Contextual Info: 2SK2097 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter.