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    2SC3074 Search Results

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    2SC3074 Price and Stock

    Toshiba America Electronic Components 2SC3074-O(Q)

    TRANS NPN 50V 5A PW-MOLD
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    DigiKey 2SC3074-O(Q) Tube 200
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    Toshiba America Electronic Components 2SC3074-Y(Q)

    TRANS NPN 50V 5A PW-MOLD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC3074-Y(Q) Tube 200
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    Toshiba America Electronic Components 2SC3074YQ

    Trans GP BJT NPN 50V 5A 3-Pin(3+Tab) PW-Mold - Bulk (Alt: 2SC3074-Y(Q))
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    Avnet Americas 2SC3074YQ Bulk 200
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    2SC3074 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC3074 Kexin Silicon NPN Epitaxial Original PDF
    2SC3074 Toshiba Silicon NPN Transistor Original PDF
    2SC3074 Toshiba NPN Transistor Original PDF
    2SC3074 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC3074 Unknown Scan PDF
    2SC3074 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3074 Unknown HIGH CURRENT SWITCHING APPLICATION Scan PDF
    2SC3074 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3074 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2SC3074 Unknown Shortform Data and Cross References (Misc Datasheets) Scan PDF
    2SC3074 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3074 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3074 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3074 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3074 Toshiba Silicon NPN transistor for high current switching applications Scan PDF
    2SC3074 Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC3074 Toshiba Toshiba Shortform Catalog Scan PDF
    2SC3074(2-7B2A) Toshiba 2SC3074 - TRANSISTOR 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3074(2-7J1A) Toshiba 2SC3074 - TRANSISTOR 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3074O Toshiba 2SC3074 - TRANSISTOR 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF

    2SC3074 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c3074

    Abstract: 2SC3074 C3074 y 2SA1244
    Text: 2SC3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


    Original     		PDF 2SC3074 2SA1244 20070701-JA c3074 2SC3074 C3074 y 2SA1244

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    c3074

    Abstract: Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ) · Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y

    a1244

    Abstract: Transistor a1244 2SA1244 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) · High speed switching time: tstg = 1.0 µs (typ.) · Complementary to 2SC3074


    Original     		PDF 2SA1244 2SC3074 a1244 Transistor a1244 2SA1244 2SC3074

    C3074

    Abstract: 2SC3074 C3074 y ta1028 2SA1244
    Text: 2SC3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


    Original     		PDF 2SC3074 2SA1244 C3074 2SC3074 C3074 y ta1028 2SA1244

    c3074

    Abstract: Transistor c3074 2SC3074 C3074 y Equivalent 2SC3074 2SA1244
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 Transistor c3074 2SC3074 C3074 y Equivalent 2SC3074 2SA1244

    Untitled

    Abstract: No abstract text available
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244

    c3074

    Abstract: C3074 y 2SA1244 2SC3074
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 C3074 y 2SA1244 2SC3074

    C3074

    Abstract: 2SC3074 2SA1244
    Text: 2SC3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


    Original     		PDF 2SC3074 2SA1244 C3074 2SC3074 2SA1244

    Transistor c3074

    Abstract: c3074 2SC3074 2SA124 2SA1244
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 Transistor c3074 c3074 2SC3074 2SA124 2SA1244

    Untitled

    Abstract: No abstract text available
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) • Complementary to 2SC3074


    Original     		PDF 2SA1244 2SC3074

    c3074

    Abstract: Equivalent 2SC3074 2SA1244 2SC3074
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 Equivalent 2SC3074 2SA1244 2SC3074

    c3074

    Abstract: C3074 y smd c3074 Equivalent 2SC3074 2SC3074
    Text: Transistors SMD Type Silicon NPN Epitaxial 2SC3074 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


    Original     		PDF 2SC3074 O-252 C3074 c3074 C3074 y smd c3074 Equivalent 2SC3074 2SC3074

    2SA1244

    Abstract: 2SC3074
    Text: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE (sat) = °-4V (Max.) (at Ie = 3A) High Speed Switching Time : ts^g^l.O/^s (Typ.) Complementary to 2SA1244


    OCR Scan     		PDF 2SC3074 2SA1244 95MAX 2SA1244 2SC3074

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • Unit in nun Low Collector Saturation Voltage : VCE (sat) = 0-4 V (Max.) (at IC = 3 A) • High Speed Switching Time : tstg = 1.0 jus (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2SC3074 SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE(sat)=0.4V(Max.) a (at Ic=3A) . High Speed Switching Time : tstg=l-0^s(Typ.) . Complementary to 2SA1244


    OCR Scan     		PDF 2SC3074 2SA1244 Collector80

    2SA1244

    Abstract: 2SC3074
    Text: T O S H IB A 2SC3074 T O S H IB A T R A N S IS T O R SIL IC O N N P N E P IT A X IA L T Y PE PCT PR O C ESS 2SC3074 H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S • • • U n i t in m m Low Collector Saturation Voltage : VGE(sat) = 0.4 V (Max.) (at IC = 3 A )


    OCR Scan     		PDF 2SC3074 2SA1244 2SA1244 2SC3074

    2SA1244

    Abstract: 2SC3074 toshiba 2sc3074
    Text: TO SH IBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244 2SA1244 2SC3074 toshiba 2sc3074

    2SA1244

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1244 HIGH CURRENT SWITCHING APPLICATIONS. • U n it in mm Low Collector S aturation Voltage : v C E(sat)= -0 .4 V (M a x .)a t I c = - 3 A • High Speed Sw itching Time : ts(,g = 1.0^s(Typ.) • Complementary to 2SC3074


    OCR Scan     		PDF 2SA1244 2SC3074 2SA1244

    toshiba 3074

    Abstract: 2SC3074 2SA1244
    Text: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat) - °-4 v (Max.) (at l£ = 3 A) • High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244 toshiba 3074 2SC3074 2SA1244

    2sc3074

    Abstract: No abstract text available
    Text: 2SC3074 SILICON NPN EPITAXIAL TY P E HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm 6 8 MAX. FEATURES: 5.2ÍQ .2 r . m\ si o oi J . Low Collector Saturation Voltage : VcE sat =0.4V(Max.) (at Ic=3A) N Ö . High Speed Switching Time : tstg=l.O^s(Typ.) . Complementary to 2SA1244


    OCR Scan     		PDF 2SC3074 2SA1244 95MAX. 2sc3074

    20A-8

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3074 Transistor Silicon NPN Epitaxial Type PCT Process High Current Switching Applications Features • Low Collector Saturation Voltage - VCE (sat, = 0.4 V (Max.) (at lc = 3A) • High Speed Switching Time - tgtg = 1.0ns (Typ.) • Complementary to 2SA1244


    OCR Scan     		PDF 2SC3074 2SA1244 50x50xa8nun 20A-8

    2SC3074

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SCB074 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage VCE = 0-4V (Max.) (at IC = 3A) High Speed Switching Time : tstg = 1 .0/ j s (Typ.) Complementary to 2SA1244


    OCR Scan     		PDF 2SC3074 2SCB074 2SA1244 95MAX 2SC3074

    2sc3074

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244 2sc3074