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    2SC503 Search Results

    2SC503 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC503 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC503 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC503 Micro Electronics Medium Power Amps and Switches Scan PDF
    2SC503 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC503 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC503 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC503 Unknown Shortform Transistor PDF Datasheet Scan PDF
    2SC503 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC503 Unknown Cross Reference Datasheet Scan PDF
    2SC503 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC503 Unknown Shortform Transistor Datasheet Guide Scan PDF
    2SC503 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC503 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC503 Unknown Vintage Transistor Datasheets Scan PDF
    2SC503 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2SC503 Unknown Shortform Data and Cross References (Misc Datasheets) Scan PDF
    2SC503 Semico Medium Power Transistors Scan PDF
    2SC5030 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TPS; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: High Frequency Switching Power Transistor Original PDF
    2SC5030 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5030 Unknown Shortform Data and Cross References (Misc Datasheets) Scan PDF

    2SC503 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    C5030 transistor

    Abstract: equivalent of transistor c5030 2SC5030 C5030 transistor 2sc5030
    Text: 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max)


    Original     		PDF 2SC5030 C5030 transistor equivalent of transistor c5030 2SC5030 C5030 transistor 2sc5030

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features 4.6±0.2 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE sat


    Original     		PDF 2SC5035

    2SC5037

    Abstract: 220E 2SC5037A
    Text: Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ● ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC5037A base voltage 2SC5037A Collector to


    Original     		PDF 2SC5037, 2SC5037A 2SC5037 2SC5037 220E 2SC5037A

    2SC5032

    Abstract: 220E
    Text: Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V VCEO


    Original     		PDF 2SC5032 2SC5032 220E

    220E

    Abstract: 2SC5036 2SC5036A
    Text: Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ● ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC5036 base voltage 2SC5036A Collector to


    Original     		PDF 2SC5036, 2SC5036A 2SC5036 220E 2SC5036 2SC5036A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features 4.6±0.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Satisfactory linearity of foward current transfer ratio hFE


    Original     		PDF 2SC5037, 2SC5037A 2SC5037A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features 4.6±0.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Satisfactory linearity of foward current transfer ratio hFE


    Original     		PDF 2SC5036, 2SC5036A 2SC5036 2SC5036A

    220E

    Abstract: 2SC5035
    Text: Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 800 V VCES 800 V VCEO


    Original     		PDF 2SC5035 220E 2SC5035

    220E

    Abstract: 2SC5034
    Text: Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SC5034 220E 2SC5034

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500


    Original     		PDF 2SC5034

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features ● ■ Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SC5032

    C5030 transistor

    Abstract: No abstract text available
    Text: 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max)


    Original     		PDF 2SC5030 C5030 transistor

    2SC5034

    Abstract: 220E
    Text: Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage


    Original     		PDF 2SC5034 2SC5034 220E

    2SC5030

    Abstract: transistor 2sc5030
    Text: TO SH IBA 2SC5030 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC5030 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hjrg i = 800~3200 * V nr>T7> (-o'! = 250 (Min/) —A.' All ' ' • • Low Saturation Voltage


    OCR Scan     		PDF 2SC5030 2SC5030 transistor 2sc5030

    2SC503

    Abstract: 2SC5031 2SC504 2SA503 2SA504
    Text: TOSHIBA {DISCRETE/OPTO} 2SC503 2SC504, 9097250 TOSHIBA SILICON NPN EPITAX IA L TYPE PCT PROCESS 5 6C <D I S C R E T E / O P T O ) 07 4 U 9 Ü 7*"3 5 W 5 ' Unit in mm $9 . 3 9 Ì . 1 A X . HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING. APPLICATIONS.


    OCR Scan     		PDF 2SC5031 2SC504, 80MHz 2SC503) 2SC504) 2SA503 2SA504. 2SC503 2SC504 2SA504

    2SC5030

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5030 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5030 Unit in mm STOROBE FLASH APPLICATIONS M E D IU M POWER AMPLIFIER APPLICATIONS 8.0 ± 0.2 • High DC Current Gain : ^FE l —800~3200 hpE( 2) —250 (Min.) Low Saturation Voltage : v CE(sat) = °-5V (Max.)


    OCR Scan     		PDF 2SC5030 2SC5030

    2SC2804

    Abstract: 2SC517 2Sd428 2sc1279 2SC503 2SC1515 2SC1923 2sc1907 2SC1047 2SC1809
    Text: m s T y p e No. tt € Manuf. = » SANYO X S TOSHIBA 2SC 778 / = # 2SC51" 2 SC 779 3K 3E 2SC2073 2SC 780A Ä 2 * 2 SC 780AGTM X £ 2SC2551 * 2SC 781 S 9 2SC503 * 2SC 782 X 2SC 782A K S 2SC782 * - » * 2SC 783 , * 2SC 784 * 2SC 785 „ * * * 2 SC 786 * 2SC 787


    OCR Scan     		PDF 2SC51T 2SC2166 2SC2073 2SD859A 2SC3968 2SC780ACG) 2SC1279 2SC1515 2SC1573 2SC1914A 2SC2804 2SC517 2Sd428 2SC503 2SC1923 2sc1907 2SC1047 2SC1809

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5030 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC5030 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 5.0 ± 0 .2 • High DC Current Gain : hjpg i = 800~3200 hpE (2)= 250 (Min.) Low Saturation Voltage : v CE(sat) = °-5V (Max.)


    OCR Scan     		PDF 2SC5030

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5030 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5Q3Q STOROBE FLASH APPLICATIONS U nit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 8.0 ± 0.2 • High DC Current Gain : hpE i = 800~3200 hug (o)= 250 (Min.) • Low Saturation Voltage : VCE (sat) = 0.5V (Max.)


    OCR Scan     		PDF 2SC5030

    ic t 4a 8

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC5030 STOROBE FLASH APPLICATIONS. U n it in mm M E D IU M POW ER AM PLIFIER APPLICATIONS. • • • High DC C urrent Gain : h F E l = 800-3200 (VCE = 2V, Ic = 0.5A) h F E ( 2 ) = 250 (Min.) (VCE = 2V, IC = 4A) Low Saturation Voltage


    OCR Scan     		PDF 2SC5030 ic t 4a 8

    2SC1681

    Abstract: 2SC1044 2SC2634 2SC1914A 2SC871 2SC879 2sc1741 2sc2061 2SC1842 2SC503
    Text: tt s £ Type No. £ Manuf. SANYO m n = TOSHIBA NEC * 2SC 848 JTtìl 2SC4641 2SC941 * 2SC 849 •±ii 2SD734 2SC367 G * 2SC 850 ±jS 2SD734 2SC503 * 2SC 851 * 2SC 852 * 2SC 853 ^ * 2 SO 854 * 2SC 855 * 2SC 856 ^ m b m a w 8x3 •drii S ÍZ * * 2SC 857 .


    OCR Scan     		PDF 2SC4641 2SC941 2SC1010 2SC458 2SC1740LN 2SD734 2SC367 2SC1741 2SC503 2SC1681 2SC1044 2SC2634 2SC1914A 2SC871 2SC879 2sc1741 2sc2061 2SC1842 2SC503

    2SC5030

    Abstract: transistor 2sc5030
    Text: TO SH IBA 2SC5030 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC5030 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hjrg i = 800~3200 * V nr>T7> (-o'! = 250 (Min/) —A.' All ' ' • • Low Saturation Voltage


    OCR Scan     		PDF 2SC5030 2SC5030 transistor 2sc5030

    2SC503

    Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
    Text: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 3 2 S C 5 4 SILICON NPN EPIT A X IA L TYPE PCT PROCESS , 5 òC 9097250 TOSHIBA CDISCRETE/OPTO) U7 4 U 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. o 7*-3 5 W $ ' Unit in mm 09.S9MAX. HIGH SPEED SWITCHING. APPLICATIONS.


    OCR Scan     		PDF 0D0740T 80MHz 2SC503) 2SC504) 2SA503 2SA504. 2SC503 2SC504 2SC503-2SC504 2SC503/Y