2SK368 Search Results

125MH

Contextual Info: 2SK3685-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

A3020v

Abstract: mosfet 600V 50A
Contextual Info: 2SK3688-01L,S,SJ FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

2SK368

Contextual Info: T O S H IB A 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK368 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS Unit in mm CONSTANT CURRENT APPLICATIONS + 0.5 2.5 - 0.3 • • High Breakdown Voltage : VQ Dg= —100V Min.

2SK3686-01

Abstract: 2SK3686 diode 60V 8A mosfet 600V 7A N-CHANNEL TO
Contextual Info: 2SK3686-01 FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK3682-01

Contextual Info: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3682-01 500V/0.38Ω/19A 1) Package TO-220 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Symbols Ratings Units V DS 500 V Continuous Drain Current ID ±19 A

2SK368

Abstract: 2SK3683
Contextual Info: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)

FUJI ELECTRIC

Abstract: 2SK3684-01L
Contextual Info: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3684-01L,S,SJ 500V/0.38Ω/19A 1) Package T-PACK L・・・ See Page 2/4 S ・・・ See Page 3/4 SJ・・・ See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

2SK3682-01

Abstract: Vds500V
Contextual Info: 2SK3682-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

Contextual Info: 2SK3682-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

Contextual Info: 2SK3686-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

2SK3681-01

Abstract: 2SK3681-01 equivalent
Contextual Info: 2SK3681-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

Contextual Info: 2SK3688-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

mosfet 300V 10A

Contextual Info: 2SK3689-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

diode 60V 8A

Abstract: diode sj mosfet 10a 600v Transistor SJ 2SK3688-01L
Contextual Info: 2SK3688-01L,S,SJ Super FAP-G Series FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

diode sj

Abstract: 2sk3684 2SK3684-01L
Contextual Info: 2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications P4 Switching regulators DC-DC converters

2SK3680-01

Abstract: n-channel 250V power mosfet VDS50
Contextual Info: 2SK3680-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators

2SK3685-01

Abstract: MJ205
Contextual Info: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3685-01 500V/0.38Ω/19A 1) Package TO-247 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current

2SK3688-01L

Abstract: FUJI MOSFET
Contextual Info: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3688-01L,S,SJ 600V/0.54Ω/16A 1) Package T-PACK L・・・ See Page 2/4 S ・・・ See Page 3/4 SJ・・・ See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

2SK3683

Abstract: 2SK3683-01MR
Contextual Info: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683-01MR 500V/0.38Ω/19A 1) Package TO-220F15R 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current

U8 marking

Contextual Info: TOSHIBA 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR i < ; SILICON N CHANNEL JUNCTION TYPE \c 3 f i f t Unit in mm AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS + 0.5 2.5 - 0.3 • • • High Breakdown Voltage : V q d S “ —100V Min.

2sk3687-01mr

Contextual Info: 2SK3687-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

Contextual Info: T O SH IB A 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK368 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 • High Breakdown Voltage : VGDg = —100V Min. •

A3020v

Abstract: 2SK3687-01MR equivalent 2SK3687-01MR 2sk3687
Contextual Info: 2SK3687-01MR FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

Contextual Info: 2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications P4 Switching regulators DC-DC converters