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    2N5303 Price and Stock

    Microchip Technology Inc 2N5303

    NPN TRANSISTOR
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    NTE Electronics Inc 2N5303

    TRANS NPN 80V 20A TO3
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    Microchip Technology Inc JAN2N5303

    TRANS NPN 60V 20A TO3
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    Microchip Technology Inc JANTX2N5303

    TRANS NPN 80V 20A TO3
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    Microchip Technology Inc JANTXV2N5303

    TRANS NPN 60V 20A TO3
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    Microchip Technology Inc JANTXV2N5303
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    2N5303 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5303 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80V 20A TO-3 Original PDF
    2N5303 Microsemi NPN Transistor Original PDF
    2N5303 On Semiconductor POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
    2N5303 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
    2N5303 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5303 API Electronics Short form transistor data Short Form PDF
    2N5303 Central Semiconductor NPN Silicon Power Transistor, TO-3 Scan PDF
    2N5303 Diode Transistor Transistor Short Form Data Scan PDF
    2N5303 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5303 General Diode Transistor Selection Guide Scan PDF
    2N5303 General Electric High current, high power, high speed N-P-N power transistor. 80V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
    2N5303 General Transistor Power Transistor Selection Guide Scan PDF
    2N5303 Mospec POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
    2N5303 Mospec NPN Silicon High-Power Transistor Scan PDF
    2N5303 Motorola The European Selection Data Book 1976 Scan PDF
    2N5303 Motorola European Master Selection Guide 1986 Scan PDF
    2N5303 Motorola Power Transistor Selection Guide Scan PDF
    2N5303 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5303 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5303 Unknown Shortform Electronic Component Datasheets Short Form PDF

    2N5303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5301

    Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS


    Original     		PDF 2N5301/D* 2N5301/D 2N5301 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745

    2N5302

    Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original     		PDF MIL-PRF-19500/456 2N5302 2N5303 1000C O-204AA) 2N5302; 2N5302 2N5303 2n5302 transistor TRANSISTOR 2n5302 2N5302 JANTXV

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original     		PDF MIL-PRF-19500/ 2N5302 2N5303 1000C O-204AA) 2N5302;

    2N5301

    Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
    Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS


    Original     		PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745

    2N5302

    Abstract: 2N5303 jantx 2n5302 adc ic 1000C
    Text: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF-19500/456 DEVICES QPL NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C Collector-Emitter Voltage


    Original     		PDF 2N5302 2N5303 MIL-PRF-19500/456 2N5302 2N5303 1000C O-204-AA) 2N5302; jantx 2n5302 adc ic

    2N5301

    Abstract: 2N5302 2N5303 2n53
    Text: SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N4398/4399/5745 ·Low collector/saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching


    Original     		PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5301 2N5302 2N5303 2n53

    Untitled

    Abstract: No abstract text available
    Text: 2N5303+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)20 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N5303

    Untitled

    Abstract: No abstract text available
    Text: 2N5303+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)20 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N5303

    2N5301

    Abstract: 2N5303 2N5302 53-02V 2N5302 data sheet 2N5302 inchange
    Text: Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4398/4399/5745 ・Low collector/saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching


    Original     		PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5302 2N5301 2N5303 53-02V 2N5302 data sheet 2N5302 inchange

    2N5303

    Abstract: No abstract text available
    Text: 2N5303 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5303 O204AA) 31-Jul-02 2N5303

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    TIP 110 transistor

    Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055

    2N5303

    Abstract: SPT5303 75 watt npn switching transistor
    Text: 2N5303, SPT5303 200 WATT NPN SILICON POWER TRANSISTOR S o lid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone 213 921-9660 T W X -910-583-4807 _ • H F E .15-60 @10 Amps


    OCR Scan     		PDF 2N5303, SPT5303 TWX-910-583-4807 2N5303 SPT5303 300/js, 75 watt npn switching transistor

    Untitled

    Abstract: No abstract text available
    Text: ÏÏÏ 3875081 G E SOLID D!T“| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ | ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


    OCR Scan     		PDF 0G173fii( 2N5301, 2N5302, 2N5303 TQ-204AA RCA-2N5301, 2N5302 2N5303 2N53Q2, 2NS303.

    2N5302

    Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303
    Text: ÆàMOS PEC NPN SILICON HIGH-POWER TRANSISTORS NPN General Purpose use in power amplifier and switching circuit applications. 2N5301 2N5302 2N5303 FEATURES: * DC Current Gain Specified- 1.0 to 30 A * Low Collector-Emitter Saturation Voltage v CE<sat = °-75 v M ax) @ lc = 10 A - 2N5301, 2N5302


    OCR Scan     		PDF 2N5301, 2N5302 2N5303, 2N4398 2N4399 2N5745 2N5301 2N5303 2N5745 N5303

    1501-33

    Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
    Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001


    OCR Scan     		PDF Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020

    2N5301

    Abstract: 2N5302 2N5303 RCA-2N5301
    Text: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 RCA-2N5301, 2N5302 2NB301, 2NS303. 2N5301 RCA-2N5301

    2n5302

    Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi D*vlc* . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)


    OCR Scan     		PDF 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N510 2N5301 2n5302 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp

    2N5303

    Abstract: NPN VCBO 80V
    Text: Data Sheet 2N5303 ^ - _ M g f t l i t MHi I l NPN SILICON POWER TRANSISTOR Sem iconductor Corp. JEDEC TO-3 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF 2N5303 2N5303 NPN VCBO 80V

    2n5253

    Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
    Text: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321


    OCR Scan     		PDF OGOG43e! 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2n5253 2N5596 2N5321 2N5357 2N5498 lta 301

    fu 5303

    Abstract: 4410b
    Text: File Num ber 2N5301, 2N5302, 2N5303 1029 High-Current High-Power High-Speed N-P-N Power T ransistors TERMINAL DESIGNATIONS Feature«: • Specification tor h rE and VcE sat up to 30 A ■ Current gain-bandwidth pro d u ct h = 2 MHz min. at 1 A ■ Low saturation voltage with high beta


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 O-204AA 2N5302 2N5303 fu 5303 4410b

    Untitled

    Abstract: No abstract text available
    Text: File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302, 2N5303 SbE ]> High-Current High-Power High-Speed N-P-N Power Transistors • 43D2271 GGHOiiS^ 387 H H A S _ TERMINAL DESIGNATIONS F e a tu m : ■ Specification to r /ife and VcE saf up to 30 A ■ Current gain-bandw idth product h = 2 MHz min. a t 1 A


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 43D2271 O-204AA 2N5302 2N5303

    2N5303

    Abstract: 2n5302 2N530I 2N5302 EB 2N5301
    Text: 2N5301 2N5302 2N5303 HIGH-POWER NPN SILICON TRANSISTORS 20 a n d 30 A M P E R E PO W ER TRANSISTORS NPN SILICON 40-60-80 VOLTS 200 WATTS .FO R U SE IN P O W E R A M P L IF IE R AND SW ITCH IN G C IR C U IT S A PPLIC A TIO N S. H i g h C o l l e c t o r - E m i t t e r S u s t a in in g V o l t a g e ' C E O S U S


    OCR Scan     		PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5303 2N530I 2N5302 EB

    2N5301

    Abstract: No abstract text available
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS 3 J CD H m C < < — r* m « in w FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 2N5301, 2N5302 DESIGNED FOR COMPLEMENTARY USE WITH 2N4398, 2N4399 I. g w S On 200 W at 25°C Case Temperature


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2NS303) 2N5301