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    2SC512 Search Results

    2SC512 Datasheets (72)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC512 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC512 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2SC512 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC512 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC512 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC512 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC512 Unknown Shortform Transistor Datasheet Guide Scan PDF
    2SC512 Unknown Shortform Data and Cross References (Misc Datasheets) Scan PDF
    2SC512 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC512 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC512 Unknown Transistor Replacements Scan PDF
    2SC512 Unknown Shortform Transistor PDF Datasheet Scan PDF
    2SC512 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC512 Unknown Cross Reference Datasheet Scan PDF
    2SC512 Unknown Shortform Transistor PDF Datasheet Scan PDF
    2SC512 Toshiba Silicon NPN Triple Diffused Transistor Scan PDF
    2SC512 Toshiba Japanese Transistor Data Book Scan PDF
    2SC5120 Hitachi Semiconductor Silicon NPN Epitaxial transistor Original PDF
    2SC5120 Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SC5120 Renesas Technology Silicon NPN Epitaxial Original PDF
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    2SC512 Price and Stock

    Panasonic Electronic Components 2SC51210P

    TRANS NPN 400V 0.07A TO126B-A1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC51210P Bulk
    • 1 -
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    Sanken Electric Co Ltd 2SC5124

    10 A, 800 V, NPN, Si, POWER TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC5124 24
    • 1 $11.25
    • 10 $5.625
    • 100 $5.625
    • 1000 $5.625
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    Toshiba America Electronic Components 2SC5129

    Bipolar Junction Transistor, NPN Type, TO-247VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC5129 67
    • 1 $1.26
    • 10 $1.26
    • 100 $0.588
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    Others 2SC5129

    Bipolar Junction Transistor, NPN Type, TO-247VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC5129 10
    • 1 $1.26
    • 10 $1.05
    • 100 $1.05
    • 1000 $1.05
    • 10000 $1.05
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    Toshiba America Electronic Components 2SC5129LBSONY1

    SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR Power Bipolar Transistor, 10A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SC5129LBSONY1 1,000
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    2SC512 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C5122

    Abstract: 2SC5122
    Text: 2SC5122 東芝トランジスタ シリコンNPN三重拡散形 2SC5122 ○ 高電圧スイッチング用 単位: mm • 高耐圧です。 • 飽和電圧が低い。 : VCE sat = 0.4 V (標準) (IC = 20 mA, IB = 0.5 mA) : VCEO = 400 V 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC5122 O-92MOD 20070701-JA C5122 2SC5122

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: 2SC5120 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier


    Original     		PDF 2SC5120 O-126FM D-85622 Hitachi DSA00164

    A710

    Abstract: No abstract text available
    Text: 2-1 Power Transistors 2-1-3 Transistors for Display Deflection Output Part No. 2SC5002 VCBO VCEO IC Pc V (V) (A) (W) 1500 2SC5124 800 7 80 10 100 Package TO-3PF Fig. No. 1 External Dimensions • No. 1 (TO-3PF) 5.5±0.2 3.45±0.2 ±0.2 5.5 φ 3.3±0.2 3.0


    Original     		PDF 2SC5002 2SC5124 A710

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features 4.6±0.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw


    Original     		PDF 2SC5127, 2SC5127A 2SC5127 2SC5127A

    transistor 12v 1A NPN

    Abstract: 2SC5124 transistor TO-3PML Outline Dimensions 200V transistor npn 2a
    Text: Inchange Semiconductor Product Specification 2SC5124 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switchihg transistor APPLICATIONS ・Display horizontal deflection output ・Switching regulator and general purpose PINNING


    Original     		PDF 2SC5124 transistor 12v 1A NPN 2SC5124 transistor TO-3PML Outline Dimensions 200V transistor npn 2a

    C5122 TRANSISTOR

    Abstract: C5122 2SC5122
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • • Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5122 O-92MODlled C5122 TRANSISTOR C5122 2SC5122

    C5122 TRANSISTOR

    Abstract: 2SC5122
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5122 O-92MOD C5122 TRANSISTOR 2SC5122

    2SC5127

    Abstract: 220E 2SC5127A
    Text: Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC5127 base voltage 2SC5127A Collector to


    Original     		PDF 2SC5127, 2SC5127A 2SC5127 2SC5127/2SC5127A 2SC5127 220E 2SC5127A

    2SC5124

    Abstract: No abstract text available
    Text: 2SC5124 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A)


    Original     		PDF 2SC5124 Pulse20) 100mA 2SC5124

    2SC5120

    Abstract: 2SA1958 Hitachi DSA00493
    Text: 2SC5120 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier


    Original     		PDF 2SC5120 2SA1958 2SC5120 2SA1958 Hitachi DSA00493

    2SC5121

    Abstract: No abstract text available
    Text: Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification Unit: mm ● ● ● • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 400 V Emitter to base voltage


    Original     		PDF 2SC5121 O-126 2SC5121

    2SC5121

    Abstract: No abstract text available
    Text: Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 M Di ain sc te on na tin nc ue e/ d 3.8±0.3 • High collector-base voltage Emitter open VCBO • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SC5121 O-126B 2SC5121

    2SC5120

    Abstract: Hitachi DSA00108
    Text: 2SC5120 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier


    Original     		PDF 2SC5120 126FM 2SC5120 Hitachi DSA00108

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5129 U nit in mm HORIZO NTAL DEFLECTION O U TPU T FOR HIGH RESOLUTION DISPLAY, COLOR TV. 1 5.5 ± 0.5 a 3.6 ±0.3 • • • • - 3 ^ - - .1- HIGH SPEED SW ITCHING APPLICATIONS. 3 0±0.3 H igh Speed : tf= 0.15/js Typ.


    OCR Scan     		PDF 2SC5129 15/js

    Untitled

    Abstract: No abstract text available
    Text: 2SC5120 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 500 MHz typ • High voltage and low output capacitance VCE0 = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier


    OCR Scan     		PDF 2SC5120

    CP100

    Abstract: 2SC5122
    Text: 2SC5122 TO SH IBA 2 S C 5 1 22 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V^ e o -^OOV • Low Saturation Voltage • V/"cm = 0 A \T C T v n Ì fT/" = 9.0m A Tt> = 0 R m A Ì MAXIMUM RATINGS (Ta = 25°C


    OCR Scan     		PDF 2SC5122 CP100 2SC5122

    2sc5129 toshiba L

    Abstract: 2SC5129 tansistor 2-16E3A 2SK528
    Text: 2SC5129 TOSHIBA TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 S C 5 1 29 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. 15.5 ± 0 .5 . 0 3 .6 ± 0 .3 HIGH SPEED SWITCHING APPLICATIONS. • • • • Wo High Speed : tf=0.15/*s Typ.


    OCR Scan     		PDF 2SC5129 -1500V 2sc5129 toshiba L 2SC5129 tansistor 2-16E3A 2SK528

    2SC5129

    Abstract: No abstract text available
    Text: TO SH IB A 2SC5129 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 S C 5 1 29 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. in — :— ✓ o I o r ° •too ' in-H CM 'p J f t E►H 2.3 MAX 1 1 Cinvi ' *25 0.9 5 MAX


    OCR Scan     		PDF 2SC5129 --1500V 2SC5129

    Untitled

    Abstract: No abstract text available
    Text: 2SC5122 TO SH IB A TENTATIVE TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE H f Mr RM l Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 5.1 MAX. • • High Voltage : V c e O = ^OOV Low Saturation Voltage : VCE sat - °-4V (TyP-) dC - 20mA, Ig = 0.5mA)


    OCR Scan     		PDF 2SC5122 O-92MOD

    2SC5125

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,


    OCR Scan     		PDF 2SC5125 2SC5125 175MHz, 175MHz

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2SC5129

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5129 2 S C 5 1 29 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm H ORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, CO LO R TV HIGH SPEED SWITCHING APPLICATIONS . .15.5 ± 0.5 3.0 ± 0 .3 0 3 .6 1 0 .3 High Speed tf = 0.15 /us Typ.


    OCR Scan     		PDF 2SC5129 2SC5129

    2SC5125

    Abstract: air variable capacitor transistor 5d mica capacitor metal clad mica capacitor T-40E
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial. planar type transistor OUTLINE DRAWING Dimension in mm specifically designed for high power amplifiers in VHF band. R1 FEATURES • High power output and high gain : Po 2 80W, Gpe S 7.2dB,


    OCR Scan     		PDF 2SC5125 2SC5125 175MHz, Tc-25^ 175MHz air variable capacitor transistor 5d mica capacitor metal clad mica capacitor T-40E