2SK371 Search Results

2SK371

Contextual Info: TO S H IB A 2SK371 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SKB71 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 4 0 m S Typ. (VDS = 10V,

mosfet 45a 200v

Abstract: 2SK3712
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15

Contextual Info: Transistors IC MOSFET SMD Type Product specification 2SK3716 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127

Contextual Info: Transistors IC SMD Type Product specification 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15

Contextual Info: T O SH IB A 2SK371 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK371 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 40mS Typ. (VDS=10V, VGS = 0, IDSS = 5mA)

2SK3719

Abstract: TRANSISTOR BJ 026 drain
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3719 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.3 ±0.05 0.13 –0.05 • Compact package • High forward transfer admittance

Contextual Info: 2SK3710 N-channel MOSFET Features and Benefits •      Equivalent Circuit Package RDSON: 6mΩ max. @25℃ VDSS: 60V Built-in Protection zener Di between G-S. Avalanche energy capability guaranteed Trench MOSFET structure. High Reliability

2SK3716

Abstract: 2SK3716-Z D1653
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications. 2SK3716 2SK3716-Z PACKAGE TO-251 MP-3

2SK3717

Abstract: SC-72 d1678
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3717 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm FEATURES 1 • Compact package 2.0 ±0.2 3.0 ±0.2 4.0 ±0.2 The 2SK3717 is suitable for converter of ECM.

2sk3715

Abstract: D1637
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3715 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3715 Isolated TO-220

smd transistor QG

Abstract: smd transistor 26 2SK3713
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3713 +0.1 1.27-0.1 TO-263 Features Super high VGS off : VGS(off) = 3.8 to 5.8 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low QG: QG = 25 nC TYP. 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low Crss: Crss = 6.5 pF TYP. 0.1max

D1637

Abstract: 2SK3712 2SK3712-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3712 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

2SK3716

Abstract: 2SK3716-Z D1653
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications. 2SK3716 2SK3716-Z PACKAGE TO-251 MP-3

Contextual Info: 60V N -ch MOSFET 2SK3711 December 2005 Package—TO3P Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed Applications • Electric power steering • High current switching Equivalent circuit D 2

2SK371

Contextual Info: 2SK371 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK371 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)

2SK3716

Abstract: smd diode Mu
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3716 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max

2SK3714

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3714 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3714 Isolated TO-220

Contextual Info: Transistors IC SMD Type Product specification 2SK3713 +0.1 1.27-0.1 TO-263 Features Super high VGS off : VGS(off) = 3.8 to 5.8 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low QG: QG = 25 nC TYP. 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low Crss: Crss = 6.5 pF TYP. 0.1max

2SK371

Abstract: 2SKB71
Contextual Info: TO S H IB A 2SK371 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SKB71 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Unit in mm Suitable for Use as First Stage for Equalizer and MC Head I 4.2 M AX. Amplifiers. High |Yfe| : |Yfs|= 4 0 m S Typ. (VDS = 10V, V G S = 0, I D S S = 5mA)

sk371

Abstract: 2SK3711
Contextual Info: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit

2SK3711

Abstract: SK3711 051124 sanken power transistor B105 CF35 MT100 sanken MOSFET DSA0016517 N CH MOSFET
Contextual Info: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit

2sk170 FET

Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Contextual Info: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch

d1658

Abstract: 2SK3713 2SK3713-SK MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3713 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3713-SK TO-262 designed for high voltage and high speed switching

D1637

Abstract: 2SK3712 2SK3712-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3712 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.