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    2SK363 Search Results

    2SK363 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3634-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3, /Bag Visit Renesas Electronics Corporation
    2SK3634-Z-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3635-Z-E1-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3Z, /Embossed Tape Visit Renesas Electronics Corporation
    2SK3635-AZ Renesas Electronics Corporation Switching N Channel MOSFET, MP-3, /Bag Visit Renesas Electronics Corporation
    2SK3635-Z-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3Z, /Bag Visit Renesas Electronics Corporation
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    2SK363 Price and Stock

    Rochester Electronics LLC 2SK3634-AZ

    MOSFET N-CH 200V 6A TO251
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    DigiKey 2SK3634-AZ Bulk 360
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    Rochester Electronics LLC 2SK3635-Z-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK3635-Z-AZ Bulk 254
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    Rochester Electronics LLC 2SK3634-Z-AZ

    6A, 200V, N-CHANNEL MOSFET
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    DigiKey 2SK3634-Z-AZ Bulk 332
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    Rochester Electronics LLC 2SK3635-Z-E1-AZ

    MOSFET N-CH 200V 8A TO252
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    DigiKey 2SK3635-Z-E1-AZ Bulk 254
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    Toshiba America Electronic Components 2SK3633(F)

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    Quest Components 2SK3633(F) 129
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    Find more 2SK363 price and stock on Findchips.com

    2SK363 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK363 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2SK363 Toshiba Field Effect Transistor Silicon N Channel Junction Type Original PDF
    2SK363 Unknown FET Data Book Scan PDF
    2SK363 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK363 Toshiba Silicon N channel field effect transistor for audio amplifier, analog switch, constant current and impedance converter applications Scan PDF
    2SK363 Toshiba Junction FETs Scan PDF
    2SK3633 Toshiba FETs - Nch 700V Original PDF
    2SK3633 Toshiba Field Effect Transistor Silicon N Channel MOS Type Original PDF
    2SK3633 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3634 Kexin N-Channel MOSFET Original PDF
    2SK3634 NEC N-ch power MOS FET (switching element) Original PDF
    2SK3634 NEC Switching N-Channel Power MOS FET Original PDF
    2SK3634-Z NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
    2SK3634-Z NEC Switching N-Channel Power MOS FET Original PDF
    2SK3635 Kexin N-Channel MOSFET Original PDF
    2SK3635 NEC N-ch power MOS FET (switching element) Original PDF
    2SK3635-Z NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
    2SK3636 Kexin N-Channel Power MOSFET Original PDF
    2SK3636 Panasonic TRANS MOSFET N-CH 800V 3A 3TO-220D-A1 Original PDF
    2SK3636 TY Semiconductor N-Channel Power MOSFET - TO-263 Original PDF

    2SK363 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK3637

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3637 1 .2 7 -0+ 0.1.1 TO-263 Features Low on-resistance, low Qg Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1


    Original     		2SK3637 O-263 2SK3637 PDF

    ciss

    Abstract: 2SK3635
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3635 TO-252 Features High voltage: VDSS = 200 V Gate voltage rating: +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 30 V Low Ciss: Ciss = 390 pF TYP. Built-in gate protection diode


    Original     		2SK3635 O-252 ciss 2SK3635 PDF

    2SK3636

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3636 TO-263 Avalanche energy capacity guaranteed: EAS 20 mJ +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 No secondary breakdown +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2


    Original     		2SK3636 O-263 2SK3636 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3633 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3633 ○ スイッチングレギュレータDC−DC コンバータ ○ モータドライブ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。


    Original     		2SK3633 PDF

    2SK3638

    Abstract: 2SK3638-ZK
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE


    Original     		2SK3638 2SK3638 2SK3638-ZK O-252 O-252) 2SK3638-ZK PDF

    toshiba a114

    Abstract: 2SK3633 SC-65 K3633 200VW
    Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		2SK3633 toshiba a114 2SK3633 SC-65 K3633 200VW PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCTS 5 NEW SERIES OF POWER MOSFETs FOR DC 48 V INPUT DC-DC CONVERTER 2SK3634/2SK3635/µPA1740TP Masahiro Haizumi* This series of N-channel power MOSFETs with a drain-source voltage VDSS rated at 200 V is ideal for the on-board DC-DC converter (on-board power supply) of


    Original     		2SK3634/2SK3635/ PA1740TP O-251 O-252 PC1909, PA2700 PD1740TP 2SK3634-Z 2SK3635-Z PC1093, PDF

    2SK3559

    Abstract: IDA-20
    Text: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal


    Original     		2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 2SK3628 2SK3559 2SK3665 2SK3637 2SK3652 E00128AE IDA-20 PDF

    2SK3637

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm φ 3.2±0.1 For PDP/For high-speed switching Symbol Rating Unit Drain-source surrender voltage VDSS 200 V VGSS ±30 V Drain current


    Original     		2002/95/EC) 2SK3637 2SK3637 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		2SK363 SC-43 PDF

    TO-252 MP-3ZK

    Abstract: 2SK3638 2SK3638-ZK
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE


    Original     		2SK3638 2SK3638 2SK3638-ZK O-252 O-252) TO-252 MP-3ZK 2SK3638-ZK PDF

    2SK3633

    Abstract: SC-65
    Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		2SK3633 2SK3633 SC-65 PDF

    2SK3633

    Abstract: K3633 VDD400 SC-65
    Text: 2SK3633 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3633 ○ スイッチングレギュレータDC−DC コンバータ ○ モータドライブ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。


    Original     		2SK3633 SC-65 2-16C1B 2SK3633 K3633 VDD400 SC-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3636 TO-263 Avalanche energy capacity guaranteed: EAS 20 mJ +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 No secondary breakdown +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2


    Original     		2SK3636 O-263 PDF

    2SK3638

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3638 TO-252 Low Ciss: Ciss = 1100 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max 3.80 MAX. VGS = 4.5 V, ID = 18 A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 15 m Unit: mm +0.1


    Original     		2SK3638 O-252 2SK3638 PDF

    2SK3634-Z

    Abstract: 2SK3634
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3634 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3634 is N-channel MOS FET device that features PART NUMBER PACKAGE 2SK3634 TO-251 MP-3 2SK3634-Z TO-252 (MP-3Z) a low on-state resistance and excellent switching


    Original     		2SK3634 2SK3634 O-251 2SK3634-Z O-252 O-251/TO-252 O-251) 2SK3634-Z PDF

    d1593

    Abstract: 2SK3635 2SK3635-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3635 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3635 is N-channel MOS FET device that features PART NUMBER PACKAGE 2SK3635 TO-251 MP-3 2SK3635-Z TO-252 (MP-3Z) a low on-state resistance and excellent switching


    Original     		2SK3635 2SK3635 O-251 2SK3635-Z O-252 O-251/TO-252 O-251) d1593 2SK3635-Z PDF

    2SK363

    Abstract: 2SK363 transistor
    Text: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		2SK363 2SK363 2SK363 transistor PDF

    2SK3637

    Abstract: No abstract text available
    Text: Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm φ 3.2±0.1 For PDP/For high-speed switching Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 200 V VGSS ±30 V Drain current ID 50 A Peak drain current IDP 200 A EAS 2 000 mJ PD


    Original     		2SK3637 2SK3637 PDF

    2SK3634

    Abstract: mosfet 60a 200v
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3634 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 High voltage: VDSS = 200 V Low Ciss: Ciss = 270 pF TYP. VDS = 10 V, VGS = 0 V Built-in gate protection diode


    Original     		2SK3634 O-252 2SK3634 mosfet 60a 200v PDF

    2sk152 equivalent

    Abstract: 2SJ44 2SK113 2SK152
    Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters


    OCR Scan     		2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent 2SJ44 2SK113 2SK152 PDF

    transistor gds

    Abstract: No abstract text available
    Text: TOSHIBA 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR i <; SILICON N CHANNEL JUNCTION TYPE \c 3 ft 3 FOR AUDIO AM PLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND U nit in mm IMPEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage • TTicrVi— Tnm it Tmr>prl»nr»p


    OCR Scan     		2SK363 transistor gds PDF

    2SK363

    Abstract: No abstract text available
    Text: TO SH IB A 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK363 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage : V j u g = —40V • High Input Impedance : lQ g g = —l.OnA (Max.


    OCR Scan     		2SK363 SC-43 PDF

    Untitled

    Abstract: No abstract text available
    Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit


    OCR Scan     		2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L PDF