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    2SK211 Search Results

    2SK211 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2112-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2111(0)-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive, POMM, / Visit Renesas Electronics Corporation
    2SK2110-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2114-E Renesas Electronics Corporation Switching N-Channel Power Mosfet, TO-220CFM, /Tube Visit Renesas Electronics Corporation
    2SK2111(0)-T1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2111-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    2SK211 Price and Stock

    Rochester Electronics LLC 2SK2111-D-T1-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK2111-D-T1-AZ Bulk 6,600 650
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    Rochester Electronics LLC 2SK2114-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK2114-E Bulk 112
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    Rochester Electronics LLC 2SK2111-T1-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK2111-T1-AZ Bulk 650
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    Rochester Electronics LLC 2SK2111-T1-AY

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK2111-T1-AY Bulk 650
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    Rochester Electronics LLC 2SK2111-T2-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK2111-T2-AZ Bulk 650
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    Find more 2SK211 price and stock on Findchips.com

    2SK211 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK211 Toshiba N-Channel MOSFET Original PDF
    2SK211 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK211 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK211 Unknown FET Data Book Scan PDF
    2SK211 Toshiba Field Effect Transistor Silicon N Channel Junction Type Scan PDF
    2SK211 Toshiba Silicon N channel field effect transistor for FM tuner applications and VHF band amplifier applications Scan PDF
    2SK211 Toshiba Junction FETs / MOSFET / Transistors Scan PDF
    2SK2110 Kexin N-Channel MOSFET Original PDF
    2SK2110 NEC N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Original PDF
    2SK2110 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK2110 NEC Semiconductor Selection Guide Original PDF
    2SK2110 TY Semiconductor N-Channel MOSFET - SOT-89 Original PDF
    2SK2110-T1-AZ Renesas Electronics SMALL SIGNAL MOSFET Original PDF
    2SK2111 Kexin N-Channel MOSFET Original PDF
    2SK2111 NEC N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Original PDF
    2SK2111 NEC Semiconductor Selection Guide Original PDF
    2SK2111 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK2111 TY Semiconductor N-Channel MOSFET - SOT-89 Original PDF
    2SK2112 Kexin N-Channel MOSFET Original PDF
    2SK2112 NEC N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Original PDF

    2SK211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dc-dc converter hitachi

    Abstract: HITACHI DIODE 2SK1404 2SK2118 DSA003639
    Text: 2SK2118 Silicon N-Channel MOS FET ADE-208-1348 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control


    Original     		PDF 2SK2118 ADE-208-1348 O-220CFM dc-dc converter hitachi HITACHI DIODE 2SK1404 2SK2118 DSA003639

    2SK1155

    Abstract: 2SK1156 2SK2114 2SK2115 DSA003639
    Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET ADE-208-1346 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator


    Original     		PDF 2SK2114, 2SK2115 ADE-208-1346 O-220CFM 2SK2114 2SK1155 2SK1156 2SK2114 2SK2115 DSA003639

    2SK245

    Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H


    Original     		PDF 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240

    Untitled

    Abstract: No abstract text available
    Text: 2SK211 東芝電界効果トランジスタ シリコンNチャネル接合形 2SK211 ○ FM チューナ用 ○ VHF 帯増幅用 単位: mm • 雑音指数が小さい。 • 相互コンダクタンスが大きい。 : |Yfs| = 9 mS 標準 • 帰還容量が小さい。


    Original     		PDF 2SK211

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline 2SK2114, 2SK2115 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SK2114, 2SK2115 2SK2114 2SK2115 Hitachi DSA002780

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM


    Original     		PDF 2SK2114, 2SK2115 O-220CFM 2SK2114 2SK2115 D-85622 Hitachi DSA002749

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline 2SK2116, 2SK2117 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SK2116, 2SK2117 2SK2116 2SK2117 Hitachi DSA00279

    1348 transistor

    Abstract: 2SK2118 2SK2118-E PRSS0003AE-A
    Text: 2SK2118 Silicon N Channel MOS FET REJ03G1000-0200 Previous: ADE-208-1348 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control


    Original     		PDF 2SK2118 REJ03G1000-0200 ADE-208-1348) PRSS0003AE-A O-220C 1348 transistor 2SK2118 2SK2118-E PRSS0003AE-A

    Untitled

    Abstract: No abstract text available
    Text: 2SK2118 Silicon N Channel MOS FET REJ03G1000-0200 Previous: ADE-208-1348 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control


    Original     		PDF 2SK2118 REJ03G1000-0200 ADE-208-1348) PRSS0003AE-A O-220Câ

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMD Type Type SMD Product specification 2SK2112 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 2.50-0.1 RDS on =1.2 MAX.@VGS=4.0V,ID=0.5A High switching speed 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1


    Original     		PDF 2SK2112 OT-89

    2SK2111

    Abstract: C10535E MEI-1202
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS in mm is a switching element that can be directly driven by the output of 4.5 ± 0.1 an IC operating at 5 V.


    Original     		PDF 2SK2111 2SK2111 C10535E MEI-1202

    2SK211GR

    Abstract: 2SK211 2SK211-Y
    Text: 2SK211 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK211 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) · High forward transfer admitance: |Yfs| = 9 mS (typ.) · Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)


    Original     		PDF 2SK211 SC-59 2SK211GR 2SK211 2SK211-Y

    MOSFET marking smd

    Abstract: SMD capacitance 82 pf 2SK2110
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2110 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 RDS on =1.5 MAX.@VGS=4.0V,ID=0.3A High switching speed 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1


    Original     		PDF 2SK2110 OT-89 MOSFET marking smd SMD capacitance 82 pf 2SK2110

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM


    Original     		PDF 2SK2116, 2SK2117 O-220CFM 2SK2116 2SK2117 D-85622 Hitachi DSA002749

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK2118 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control Outline 2SK2118


    Original     		PDF 2SK2118 Hitachi DSA00279

    2SK1157

    Abstract: 2SK1158 2SK2116 2SK2117 Hitachi DSA003755
    Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate


    Original     		PDF 2SK2116, 2SK2117 O-220CFM 2SK2116 2SK1157 2SK1158 2SK2116 2SK2117 Hitachi DSA003755

    Hitachi DSA001652

    Abstract: No abstract text available
    Text: 2SK2119 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter


    Original     		PDF 2SK2119 O-220CFM D-85622 Hitachi DSA001652

    2SK1157

    Abstract: 2SK1158 2SK2116 2SK2117 2SK2166 2SK2167 DSA003639
    Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET ADE-208-1347 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator


    Original     		PDF 2SK2116, 2SK2117 ADE-208-1347 O-220CFM 2SK2116 2SK1157 2SK1158 2SK2116 2SK2117 2SK2166 2SK2167 DSA003639

    2SK1155

    Abstract: 2SK1156 2SK2114 2SK2115 Hitachi DSA00395
    Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate


    Original     		PDF 2SK2114, 2SK2115 O-220CFM 2SK2114 2SK1155 2SK1156 2SK2114 2SK2115 Hitachi DSA00395

    2SK2110

    Abstract: No abstract text available
    Text: t * — •£? • S ' — NEC h h ^ ^ M O S Field Effect Transistor 2SK2110 2 S K 2 1 1 0 & N 3 1 -V Z J U t i i M O S F E T V S U , « fc : mm 5 V H ;Ü ^ IC < 7 )fc ti r t C J: « * < •> 51> ^ " i i T ' î o *> *£ Î5 W g ;< , * < * y 3 1> 7 ìl]g fc ìli,'£ ò & ,


    OCR Scan     		PDF 2SK2110 2SK2110

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR M T SILICON N CHANNEL JUNCTION TYPE 1 1 • m. ■ ■ FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. • • Low Noise Figure : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK211 100MHz)

    2SK211Y

    Abstract: 2SK211GR 2SK211-Y 2SK211-GR
    Text: SILICON N CHANNEL JUNCTION TYPE 2SK211 Unit in mm FM TUNER APPLICATIONS. VHF B A N D AM PLIFIER APPLICATIONS. + Q5 £ 5 —<13 + Q2 5 1 .5 —Q l 5 • Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) • High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK211 100MHz) -100//A SC-59 2SK211Y 2SK211GR 2SK211-Y 2SK211-GR

    Untitled

    Abstract: No abstract text available
    Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline 2SK2116, 2SK2117


    OCR Scan     		PDF 2SK2116, 2SK2117 2SK2116

    K1404

    Abstract: No abstract text available
    Text: 2SK2118 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • No secondary breakdow n • Suitable for Sw itching regulator, D C-D C converter,M otor C ontrol


    OCR Scan     		PDF 2SK2118 O-220CFM K1404