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    2SK246 Search Results

    2SK246 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2462-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK2461-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
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    2SK246 Price and Stock

    ROHM Semiconductor 2SK2463T100

    MOSFET N-CH 60V 2A MPT3
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    DigiKey 2SK2463T100 Cut Tape 893 1
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    2SK2463T100 Reel
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    2SK2463T100 Digi-Reel 1
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    Mouser Electronics 2SK2463T100 746
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    Rochester Electronics LLC 2SK2461-AZ

    2SK2461 - SILICON N CHANNEL MOSF
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    DigiKey 2SK2461-AZ Bulk 101
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    Rochester Electronics LLC 2SK2464-TL-E

    NCH 10V DRIVE SERIES
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    DigiKey 2SK2464-TL-E Bulk 273
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    Rochester Electronics LLC 2SK2462(04)-AZ

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK2462(04)-AZ Bulk 154
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    NEC Electronics Group 2SK2461-AZ

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    Quest Components 2SK2461-AZ 12,481
    • 1 $2.56
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    2SK246 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK246 Toshiba N-Channel MOSFET Original PDF
    2SK246 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK246 Unknown Scan PDF
    2SK246 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK246 Unknown FET Data Book Scan PDF
    2SK246 Toshiba Silicon N channel field effect transistor for constant current, impedance converter and DC-AC high input impedance amplifier circuit applications Scan PDF
    2SK246 Toshiba Junction FETs Scan PDF
    2SK2460 ROHM Power MOSFET Scan PDF
    2SK2460N ROHM Switching (250V, 5A) Original PDF
    2SK2461 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK2461 NEC Semiconductor Selection Guide Original PDF
    2SK2461 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK2462 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK2462 NEC Semiconductor Selection Guide Original PDF
    2SK2462 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK2463 ROHM Small switching (60V, 2A) Original PDF
    2SK2463 ROHM Power MOSFETs Scan PDF
    2SK2463T100 ROHM TRANS MOSFET N-CH 60V 2A 3SC-62 T/R Original PDF
    2SK2464 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK2464 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF

    2SK246 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k2466

    Abstract: field effect transistor transistor k2466
    Text: 2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK2466 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 34 mΩ (typ.) z High forward transfer admittance


    Original
    2SK2466 k2466 field effect transistor transistor k2466 PDF

    2SK246

    Abstract: TOSHIBA 2SK246 2SK2463
    Text: 2SK246 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications Unit: mm • High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original
    2SK246 2SK246 TOSHIBA 2SK246 2SK2463 PDF

    K2466

    Abstract: transistor k2466 k2466 datasheet 2SK2466
    Text: 2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK2466 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance


    Original
    2SK2466 K2466 transistor k2466 k2466 datasheet 2SK2466 PDF

    2SK2466

    Abstract: No abstract text available
    Text: 2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK2466 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance


    Original
    2SK2466 2SK2466 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK246 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications Unit: mm • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original
    2SK246 SC-43 PDF

    mosfet

    Abstract: 2SK2463
    Text: Transistors Small switching 60V, 2A 2SK2463 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET


    Original
    2SK2463 mosfet 2SK2463 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2463 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60.0 V(BR)GSS (V) I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)


    Original
    2SK2463 PDF

    2SK2461

    Abstract: IEI-1213 MEI-1202 MF-1134 DE 9411
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2461 is N-Channel MOS Field Effect Transistor de- in millimeters signed for high speed switching applications. 10.0 ±0.3


    Original
    2SK2461 2SK2461 IEI-1213 MEI-1202 MF-1134 DE 9411 PDF

    MOSFET 300V

    Abstract: 2SK2469-01MR
    Text: 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - 1Ω 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    2SK2469-01MR MOSFET 300V 2SK2469-01MR PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2466 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 2SK2466 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan
    2SK2466 100/j PDF

    TOSHIBA 2-16F1B

    Abstract: 2f3 transistor 2SK2467-Y 2F360
    Text: TO SHIBA 2SK2467-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2467-Y Unit in mm HIGH POWER AMPLIFIER APPLICATION IL ' i â - 15.8 + 0.5 • High Breakdown Voltage : Vj gg = 180V • High Forward Transfer Admittance : |Yfs| = 4.0S Typ.)


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    2SK2467-Y 2-16F1B TOSHIBA 2-16F1B 2f3 transistor 2SK2467-Y 2F360 PDF

    2SK2463

    Abstract: T100 S-AU
    Text: Transistors Small switching 60V, 2A 2SK2463 •Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. •External dimensions (Units: mm)


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    2SK2463 2SK2463 T100 S-AU PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


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    2SK2519-01 2SK2520-01 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 PDF

    nec 2501 kk

    Abstract: TRANSISTOR NEC B77 TEA 1400 2SK2461 TC-8078 nec+2501+kk
    Text: M O S ^ W s Jj I I I h 7 > y ' 7 $ M O S Field Effect T ran s is to r 2SK2461 MOS FET X 2SK2AQMm^~Jv ^ i m M •X - f 7 *$ 7 ? T & ‘J, & B 7 7? ^ a. I - 2 ig S iE !S § ^ > ^ S f f ljÉ K f t jS T 'T o i t 04 V ig li T' t >mt T' to Rds on) 1 = 8 0 m Q l i ;


    OCR Scan
    2SK2461 MP-45F O-220) 0i-i07- CD10UIIOCOCOCM^ rN01C3^ nec 2501 kk TRANSISTOR NEC B77 TEA 1400 2SK2461 TC-8078 nec+2501+kk PDF

    2SK2463

    Abstract: No abstract text available
    Text: Transistors Small switching 60V, 2A 2SK2463 •F e a tu re s 1) E x te rn a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) L o w -v o lta g e d riv e (4V).


    OCR Scan
    2SK2463 O-220, 0Dlb713 O-220FN O220FP T0-220FP, O-220FP. 7020c 2SK2463 PDF

    2SK2460N

    Abstract: mosfet ftr 03 251C SC-75A mosfet 2sk* to-92
    Text: Transistors Switching 250V, 5A 2SK2460N •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low on-resistance. 2) -, +0.3 High-speed switching. 3 - 0.1 e+0.3 *—0.1 3) Wide SOA (safe operating area). Ö+0.2 4) Gate-source voltage guaranteed at V gss = ± 3 0 V .


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    2SK2460N T0-22Ã O-220FP O-220 O-126 O-220, 0Dlb713 O-220FN 2SK2460N mosfet ftr 03 251C SC-75A mosfet 2sk* to-92 PDF

    2SK246

    Abstract: TOSHIBA 2SK246
    Text: T O S H IB A 2SK246 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK246 Unit in mm FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT . 5.1 M AX. IMPEDANCE AM PLIFIER CIRCUIT APPLICATIONS • High Breakdown Voltage : V • High Input Impedance


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    2SK246 SC-43 2SK246 TOSHIBA 2SK246 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2466 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 2SK2466 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • 4V Gate Drive • Low Drain-Sorce ON Resistance


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    2SK2466 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2467-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2467-Y HIGH PO W ER AM PLIFIER APPLICATION Unit in mm 15.8±0.5 • 3.5 i zf3.6±0.2 High Breakdown Voltage : Vjjgg = 180V • High Forward Transfer Admittance : |Yfs| = 4.0S Typ.


    OCR Scan
    2SK2467-Y 2-16F1B PDF

    2SK2466

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2466 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 2SK2466 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • 4V Gate Drive


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    2SK2466 34mfl 100//s* 2SK2466 PDF

    2SK2469-01MR

    Abstract: No abstract text available
    Text: '95 No. 11 F U J I V4># iw o M s iT it e u e *,<W*|; 4^ ^ y |i< iu v s <|#i t i l *±W * imma.b- _ ±/\7-M0SFET FAP-n 5 1 3 0 0 V /5 A 2SK2469-01MR N“L'V ^ ; u x > /\> X ^ > h®/N°7-M0SFET mm N-channel enhancement mode POWER MOSFET


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    300V/5A/1 2SK2469-01MR ls30EJ 2SK2469-01MR PDF

    MOSFET 300V

    Abstract: 300V series regulators
    Text: FUJI 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - IQ 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan
    2SK2469-01MR MOSFET 300V 300V series regulators PDF

    2SK2460N

    Abstract: 2SK2460 251C Ol05
    Text: Transistors Switching 250V, 5A 2SK2460N •E x te rn a l dim ensions (Units: mm) 9 Features 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G a te -so u rce v o lta g e g u ara ntee d at V gss = ± 3 0 V . 5) Easily designed drive circuits.


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    2SK2460N O-220FN 2SK2460N 2SK2460 251C Ol05 PDF

    2SK2540

    Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
    Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )


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    2SK2262 2SK2294 -220FN 2SK2792 2SK2459N 2SK2460N 0-220FN 2SK2713 2SK2793 2SK2540 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F PDF