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    2SK373 Search Results

    2SK373 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3736-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 6A 700Mohm To-220Ab Visit Renesas Electronics Corporation
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    2SK373 Price and Stock

    Rochester Electronics LLC 2SK3737-5-TL-E

    RF MOSFET 10V 3MCP
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    DigiKey 2SK3737-5-TL-E Bulk 38,708 333
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    Rochester Electronics LLC 2SK3738-TL-E

    JFET N-CH 40V 1MA SMCP
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    DigiKey 2SK3738-TL-E Bulk 31,225 2,049
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    onsemi 2SK3738-TL-E

    JFET N-CH 40V 1MA SMCP
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    Avnet Americas 2SK3738-TL-E Reel 4 Weeks 2,466
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    Rochester Electronics 2SK3738-TL-E 26,025 1
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    onsemi 2SK3737-5-TL-E

    RF MOSFET 10V 3MCP
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    Rochester Electronics 2SK3737-5-TL-E 38,708 1
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    2SK373 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK373 Toshiba N-Channel MOSFET Original PDF
    2SK373 Unknown Scan PDF
    2SK373 Unknown FET Data Book Scan PDF
    2SK373 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK373 Toshiba Silicon N channel field effect transistor for audio amplifier, high voltage amplifier and constant current applications Scan PDF
    2SK373 Toshiba Junction FETs Scan PDF
    2SK3731 Kexin N-Channel Enhancement Mode MOSFET Original PDF
    2SK3731 Panasonic N-Channel Enhancement Mode MOSFET Original PDF
    2SK3731 TY Semiconductor N-Channel Enhancement Mode MOSFET - TO-263 Original PDF
    2SK3736 Renesas Technology Silicon N Channel MOS FET Power Switching Original PDF
    2SK3737 Sanyo Semiconductor FM Tuner, VHF Amplifier Applications Original PDF
    2SK3737-5-TL-E SANYO Electric RF FETs, Discrete Semiconductor Products, MOSFET N-CH 15V 30MA 3MCP Original PDF
    2SK3738 Sanyo Semiconductor Junction FETs Original PDF
    2SK3738-TL-E On Semiconductor 2SK3738 - JunctionFET 40V 1mA IGSS;-500pA max. Nch Single SMCP Original PDF
    2SK373GR Toshiba Silicon N-Channel Junction Transistor Scan PDF
    2SK373O Toshiba Silicon N-Channel Junction Transistor Scan PDF
    2SK373Y Toshiba Silicon N-Channel Junction Transistor Scan PDF

    2SK373 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3731 TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features Low on-resistance, low Qg +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2


    Original     		PDF 2SK3731 O-263

    2SK3737

    Abstract: 71505 8390-3 MARKING KA
    Text: 2SK3737 Ordering number : ENN8390 2SK3737 N-Channel Silicon MOSFET FM Tuner, VHF Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


    Original     		PDF 2SK3737 ENN8390 2SK3737 71505 8390-3 MARKING KA

    K373

    Abstract: k3731
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3


    Original     		PDF 2002/95/EC) 2SK3731 K373 k3731

    2SK3738

    Abstract: ITR00837 ITR00838 ITR00839 ITR00840 ENN7671
    Text: Ordering number : ENN7671 2SK3738 N-Channel Junction Silicon FET 2SK3738 Impedance Converter Applications Application • • Package Dimensions Impedance conversion. Infrared sensor. unit : mm 2124 [2SK3738] Features • Small IGSS. Small Ciss. Ultrasmall package permitting applied sets to be


    Original     		PDF ENN7671 2SK3738 2SK3738] 2SK3738 ITR00837 ITR00838 ITR00839 ITR00840 ENN7671

    k3731

    Abstract: k373 2sk3731
    Text: Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 1.4 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SK3731 k3731 k373 2sk3731

    2SK373

    Abstract: No abstract text available
    Text: 2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)


    Original     		PDF 2SK373 SC-43 2SK373

    2SK373

    Abstract: No abstract text available
    Text: 2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)


    Original     		PDF 2SK373 2SK373

    2SK373

    Abstract: No abstract text available
    Text: 2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Applications • High breakdown voltage: VGDS = −100 V min · High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)


    Original     		PDF 2SK373 SC-43 2SK373

    SMD Transistors nc

    Abstract: 2SK3731 V782
    Text: Transistors IC SMD Type N-channel enhancement mode MOSFET 2SK3731 TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features Low on-resistance, low Qg +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1


    Original     		PDF 2SK3731 O-263 SMD Transistors nc 2SK3731 V782

    2SK3737

    Abstract: D1306 8390-3 IT09918
    Text: 2SK3737 注文コード No. N 8 3 9 0 三洋半導体データシート N 2SK3737 N チャネル MOS 型シリコン電界効果トランジスタ FM チューナ , VHF 帯増幅用 特長 ・低雑音である。 ・電力利得が大きい。 ・帰還容量が小さい。


    Original     		PDF 2SK3737 100MHz, IT09915 IT08682 100MHz IT09917 IT09918 2SK3737 D1306 8390-3 IT09918

    K3731

    Abstract: K373 2SK3731 2SK373
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET • Features Unit: mm • Low on-resistance, low Qg • High avalanche resistance 4.6±0.2 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3


    Original     		PDF 2002/95/EC) 2SK3731 O-220C-G1 K3731 K3731 K373 2SK3731 2SK373

    2sk170 FET

    Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
    Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch


    Original     		PDF 2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14

    7027a

    Abstract: 2SK3738
    Text: 2SK3738 Ordering number : EN7671A SANYO Semiconductors DATA SHEET 2SK3738 N-Channel Junction Silicon FET Impedance Converter Applications Applications • • Impedance conversion Infrared sensor Features • • • Small IGSS Small Ciss Ultrasmall package permitting applied sets to be small and slim


    Original     		PDF EN7671A 2SK3738 027A-003 2SK3738-TL-E 7027a 2SK3738

    2SK3736

    Abstract: PRSS0004AC-A
    Text: 2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance Outline RENESAS Package code: PRSS0004AC-A Package name: TO-220AB D 1. Gate 2. Drain


    Original     		PDF 2SK3736 REJ03G0525-0200 PRSS0004AC-A O-220AB) 2SK3736 PRSS0004AC-A

    2SK3738

    Abstract: No abstract text available
    Text: Ordering number : EN7671A 2SK3738 N-Channel JFET http://onsemi.com 40V, 50 to 130 A, 0.13mS, SMCP Applications • • Impedance conversion Infrared sensor Features • • • Small IGSS Small Ciss Ultrasmall package permitting applied sets to be small and slim


    Original     		PDF EN7671A 2SK3738 2SK3738

    2SK3738

    Abstract: D1306 ITR00837 ITR00838 ITR00839 ITR00840
    Text: 注文コード No. N 7 6 7 1 2SK3738 三洋半導体データシート N 2SK3738 用途 N チャネル接合形シリコン電界効果トランジスタ インピーダンス変換用 ・インピーダンス変換用。 ・赤外線センサー用。 特長


    Original     		PDF 2SK3738 IT06670 IT06671 IT06672 2SK3738 D1306 ITR00837 ITR00838 ITR00839 ITR00840

    2SK3738

    Abstract: No abstract text available
    Text: Ordering number : ENN7671 2SK3738 2SK3738 N-Channel Junction Silicon FET Impedance Converter Applications Application • • Package Dimensions Impedance conversion. Infrared sensor. unit : mm 2124 [2SK3738] Features • Small IGSS. Small Ciss. Ultrasmall package permitting applied sets to be


    Original     		PDF 2SK3738 ENN7671 2SK3738] 2SK3738/D 2SK3738

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR i SILICON N CHANNEL JUNCTION TYPE <; k 3 7 3 FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT Unit in mm CURRENT APPLICATIONS • 5.1 M AX. High Breakdown Voltage : V q d s = _ 100V Min. • T n c i o = _ 1 On A Í M


    OCR Scan     		PDF 2SK373 SC-43

    2SK373

    Abstract: No abstract text available
    Text: TOSHIBA 2SK373 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2SK373 Unit in mm FOR A U D IO , HIGH VOLTAGE AMPLIFIER A N D CONSTANT CURRENT APPLICATIONS • • 5.1 M A X . High Breakdown Voltage : VGDS= —100V Min. High Input Impedance : lQ gg= —l.OnA (Max.) (VQ.g= —80V)


    OCR Scan     		PDF 2SK373 -100V SC-43

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK373 Unit in mm FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT CURRENT APPLICATIONS • • 5.1 M AX. High Breakdown Voltage : VGDS= —100V Min. High Input Impedance : lGSS~ —1-OnA (Max.) (V(jg= —80V)


    OCR Scan     		PDF 2SK373 T0-92 SC-43

    2SK373

    Abstract: No abstract text available
    Text: T O S H IB A 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK373 FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT U nit in mm CURRENT APPLICATIONS • 5.1 M AX. High Breakdown Voltage : V G D S= —100V M in. • 0.45 High Input Impedance : lQ g g = —l.OnA (Max.) (VQ.g= —80V)


    OCR Scan     		PDF 2SK373 -100V SC-43 2SK373

    2SK373

    Abstract: No abstract text available
    Text: TOSHIBA 2SK373 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK373 Unit in mm FOR AUDIO, HIGH VOLTAGE A M PLIFIER AN D CONSTANT . 5.1 MAX. CURRENT APPLICATIONS • • High Breakdown Voltage : VQDg= —100V Min. High Input Impedance : lQ gg= —l.OnA (Max.) (VQg= —80V)


    OCR Scan     		PDF 2SK373 -100V SC-43 2SK373

    vgds 100v

    Abstract: 2SK373
    Text: TOSHIBA 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK373 FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT Unit in mm CURRENT APPLICATIONS • . 5.1 M AX. High Breakdown Voltage : VGDS“ —100V Min. • 0.45 High Input Impedance : I@gg= —l.OnA (Max.) (V (jg= —80V)


    OCR Scan     		PDF 2SK373 -100V SC-43 vgds 100v 2SK373

    2SK241 Equivalent FET

    Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
    Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo


    OCR Scan     		PDF OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf