Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK210 Search Results

    2SK210 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2109-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2109-T2-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2109-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2109(0)-T1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation

    2SK210 Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK210 Toshiba N-Channel MOSFET Original PDF
    2SK210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2SK210 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK210 Unknown FET Data Book Scan PDF
    2SK210 Unknown Scan PDF
    2SK210 Toshiba Field Effect Transistor Silicon N Channel Junction Type Scan PDF
    2SK210 Toshiba SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO Scan PDF
    2SK210 Toshiba Silicon N channel field effect transistor for FM tuner applications and VHF band amplifier applications Scan PDF
    2SK210 Toshiba Junction FETs / MOSFET / Transistors Scan PDF
    2SK2100-01MR Fuji Electric Power MOSFET Scan PDF
    2SK2101-01MR Fuji Electric N-channel MOS-FET Original PDF
    2SK2101-01MR Fuji Electric N-channel MOS-FET Original PDF
    2SK2102 ROHM Silicon N-Channel MOSFET Scan PDF
    2SK2103 ROHM Small switching (30V, 2A) Original PDF
    2SK2103 ROHM Power MOSFETs Scan PDF
    2SK2103T100 ROHM TRANS MOSFET N-CH 30V 2A 3SC-62 T/R Original PDF
    2SK2103T100 ROHM Small Switching (30 V, 2 A) Original PDF
    2SK2104 ROHM Power MOSFET Scan PDF
    2SK2104 ROHM Power MOSFET Scan PDF
    2SK2104 ROHM Silicon N-Channel MOS FET Scan PDF
    SF Impression Pixel

    2SK210 Price and Stock

    Rochester Electronics LLC 2SK2109-T1-AZ

    2SK2109-T1-AZ - N-CHANNEL MOS FE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2109-T1-AZ Bulk 6,956 780
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.38
    • 10000 $0.38
    		Buy Now

    ROHM Semiconductor 2SK2103T100

    MOSFET N-CH 30V 2A MPT3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2103T100 Reel 1,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.31674
    • 10000 $0.24745
    		Buy Now
    2SK2103T100 Cut Tape 946 1
    • 1 $0.74
    • 10 $0.643
    • 100 $0.4454
    • 1000 $0.37216
    • 10000 $0.37216
    		Buy Now
    2SK2103T100 Digi-Reel 1
    • 1 $0.74
    • 10 $0.643
    • 100 $0.4454
    • 1000 $0.37216
    • 10000 $0.37216
    		Buy Now
    Mouser Electronics 2SK2103T100 56
    • 1 $0.74
    • 10 $0.653
    • 100 $0.47
    • 1000 $0.316
    • 10000 $0.257
    		Buy Now
    Quest Components 2SK2103T100 2,892
    • 1 $0.9
    • 10 $0.9
    • 100 $0.9
    • 1000 $0.36
    • 10000 $0.315
    		Buy Now
    ComSIT USA 2SK2103T100 2,030
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Others 2SK2101

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2101 180
    • 1 $4.2
    • 10 $2.1
    • 100 $1.96
    • 1000 $1.96
    • 10000 $1.96
    		Buy Now

    Renesas Electronics Corporation 2SK2109-T1-AZ

    2SK2109-T1-AZ - N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK2109-T1-AZ 6,956 1
    • 1 $0.3884
    • 10 $0.3884
    • 100 $0.3651
    • 1000 $0.3301
    • 10000 $0.3301
    		Buy Now

    ROHM Semiconductor 2SK2103

    SMALL SWITCHING (30V, 2A) TRANSISTOR Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK2103 5,400
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more 2SK210 price and stock on Findchips.com

    2SK210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DSA007622

    Abstract: No abstract text available
    Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)


    Original     		PDF 2SK210 SC-59 DSA007622

    2SK2101-01MR

    Abstract: No abstract text available
    Text: 2SK2101-01MR N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2101-01MR 2SK2101-01MR

    2SK245

    Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H


    Original     		PDF 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240

    2SK210

    Abstract: No abstract text available
    Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)


    Original     		PDF 2SK210 SC-59 2SK210

    2SK210

    Abstract: No abstract text available
    Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)


    Original     		PDF 2SK210 2SK210

    mosfet

    Abstract: parallel mosfet 2SK2103
    Text: Transistors Small switching 30V, 2A 2SK2103 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel


    Original     		PDF 2SK2103 mosfet parallel mosfet 2SK2103

    2SK210

    Abstract: 2SK2104 2SK2105
    Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)


    Original     		PDF 2SK210 2SK210 2SK2104 2SK2105

    2SK2109

    Abstract: 2SK210
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2109 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 Features +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 RDS on =1.0 MAX.@VGS=4.0V,ID=0.3A +0.1 4.00-0.1 Low on-resistance High switching speed 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1


    Original     		PDF 2SK2109 OT-89 2SK2109 2SK210

    2SK2101

    Abstract: 2SK2101-01MR
    Text: 2SK2101-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications 2.54


    Original     		PDF 2SK2101-01MR O-220F15 SC-67 2SK2101 2SK2101-01MR

    2SK2103

    Abstract: No abstract text available
    Text: Transistors Small switching 30V, 2A 2SK2103 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel


    Original     		PDF 2SK2103 2SK2103

    Untitled

    Abstract: No abstract text available
    Text: 2SK2101-01M N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2101-01M

    2SK2108

    Abstract: No abstract text available
    Text: Ordering number:ENN4602A N-Channel Silicon MOSFET 2SK2108 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A


    Original     		PDF ENN4602A 2SK2108 2SK2108] O-220ML 2SK2108

    2SK2100

    Abstract: 600V 2A MOSFET N-channel 3,3
    Text: 2SK2100-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications 2.54


    Original     		PDF 2SK2100-01MR O-220F15 SC-67 2SK2100 600V 2A MOSFET N-channel 3,3

    2SK2101-01MR

    Abstract: No abstract text available
    Text: 2SK2101-01MR N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2101-01MR 2SK2101-01MR

    2SK210

    Abstract: No abstract text available
    Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)


    Original     		PDF 2SK210 2SK210

    2SK210

    Abstract: No abstract text available
    Text: SILICON N CHANNEL JUNCTION TYPE 2SK210 U nit in mm FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. + Ü5 2 .5 -0 1 3 + Û2 5 1 .5 - t t 1 5 • High Power Gain : G ps = 24dB Typ. (f= 100MHz) • Low Noise Figure : N F= 1.8dB (Typ.) (f= 100MHz) •


    OCR Scan     		PDF 2SK210 100MHz) SC-59 2SK210

    2SK210

    Abstract: marking ADMI
    Text: 2SK210 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 -0 .3 + 0 .2 5 1 .5 - Q l 5 • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure


    OCR Scan     		PDF 2SK210 100MHz) SC-59 100MHz 200i----- 2SK210 marking ADMI

    2SK210

    Abstract: RS1N
    Text: 2SK210 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS • • • + 0.5 2 .5 -0.3 + 0.25 1.5-0.15 High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure


    OCR Scan     		PDF 2SK210 100MHz) SC-59 2SK210 RS1N

    jft 1411

    Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
    Text: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o


    OCR Scan     		PDF 2SK2109 2SK2109 TC-7983A 484Sife jft 1411 c947 100 N31 transistor mur 641 M 9619 transistor 9619 nec 7824 ki 30 if 35acr

    2SK210

    Abstract: No abstract text available
    Text: 2SK210 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS • • • + 0.5 2 .5 -0.3 + 0.25 1.5-0.15 High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure


    OCR Scan     		PDF 2SK210 100MHz) SC-59 2SK210

    2SK2102

    Abstract: No abstract text available
    Text: TOSHIBA 2SK210 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K SILICON N CHANNEL JUNCTION TYPE 2 1 Q FM TUNER APPLICATIONS. VHF BAND AM PLIFIER APPLICATIONS. High Power Gain : GPs = 24dB Typ. (f=100M H z) • Low Noise Figure : NF = 1.8dB (Typ.) (f=lOOMHz) • High Forward Transfer Admitance :


    OCR Scan     		PDF 2SK210 2SK2102

    2SK2108

    Abstract: No abstract text available
    Text: Ordering number: EN4602A _ 2SK2108 NO.4602A N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating m ounting. A b s o lu te M ax im u m R a tin g s at Ta = 25°C


    OCR Scan     		PDF EN4602A 2SK2108

    2SK210

    Abstract: No abstract text available
    Text: 2SK210 TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS SILICON N CHANN EL JUNCTION TYPE 2SK210 • H igh Power G ain : G p g = 24dB Typ. (f= 100M H z) • Low N oise Figure : N F = 1.8dB (Typ.) (f = 100MHz)


    OCR Scan     		PDF 2SK210 100MHz) SC-59 UNIT25Â 100MHz

    2SK2103

    Abstract: No abstract text available
    Text: 2SK2103 Silicon N-channel MOSFET Features Dimensions Units : mm available in MPT3 (MPT, SOT89, SC-62) package 2SK2103 (MPT3) ♦0.2 4 .5 _ o . i low on-resistance 1 .6 * 0 1 Ö ïî wide SOA (Safe Operating Area) 1 m fast switching speed ! ! «vi ! i ! '


    OCR Scan     		PDF 2SK2103 SC-62) 2SK2103