Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC536 Search Results

    SF Impression Pixel

    2SC536 Price and Stock

    Rochester Electronics LLC 2SC536NG-NPA-AT

    TRANS NPN 50V 0.15A TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC536NG-NPA-AT Bulk 1,689,582 6,662
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.05
    		Buy Now

    Rochester Electronics LLC 2SC536NF-NPA-AT

    TRANS NPN 50V 0.15A TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC536NF-NPA-AT Bulk 434,069 6,662
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.05
    		Buy Now

    Rochester Electronics LLC 2SC536KE-BOSE-AA

    NPN SILICON TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC536KE-BOSE-AA Bulk 49,500 11,539
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Rochester Electronics LLC 2SC536KE-NP

    NPN SILICON TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC536KE-NP Bulk 37,377 11,539
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Rochester Electronics LLC 2SC536E-SPA-AC

    SMALL SIGNAL NPN SILICON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC536E-SPA-AC Bulk 3,664 1,110
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.27
    		Buy Now
    Find more 2SC536 price and stock on Findchips.com

    2SC536 Datasheets (92)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC536 Jiangsu Changjiang Electronics Technology TO-92 Plastic Encapsulate Transistors Original PDF
    2SC536 Various Russian Datasheets Transistor Original PDF
    2SC536 WEJ Electronic TRANSISTOR (NPN) Original PDF
    2SC536 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SC536 Continental Device India TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92 Scan PDF
    2SC536 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC536 Micro Electronics Low Level and General Purpose Transistors Scan PDF
    2SC536 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC536 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC536 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC536 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC536 Unknown Vintage Transistor Datasheets Scan PDF
    2SC536 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC536 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC536 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC536 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC536 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC536 Unknown Cross Reference Datasheet Scan PDF
    2SC536 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC536 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF

    2SC536 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc536

    Abstract: transistor 2sC536 2SC536 transistor st 2SC536 equivalent 2sc536 noise figure 2SC536 C Collector 5v npn TRANSISTOR
    Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC536 150mA 30MHz 2sc536 transistor 2sC536 2SC536 transistor st 2SC536 equivalent 2sc536 noise figure 2SC536 C Collector 5v npn TRANSISTOR

    2SC5369

    Abstract: MICROWAVE TRANSISTOR 20113 nec ic 8582 IC 4008 NEC 9117
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSION in mm • High f T 2.1±0.1 14 GHz TYP. 1.25±0.1 • High gain 0.2 –0 6 4 5 1 2 3 • 6-pin small mini mold package


    Original     		PDF 2SC5369 2SC5369 MICROWAVE TRANSISTOR 20113 nec ic 8582 IC 4008 NEC 9117

    2SC5363

    Abstract: SC-75
    Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C 0.4 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 Unit Collector-base voltage (Emitter open)


    Original     		PDF 2SC5363 2SC5363 SC-75

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open)


    Original     		PDF 2SC5363

    2sc536

    Abstract: 2SC536 transistor 2sc536 noise figure hFE-200 to-92 npn ST2SC536
    Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC536 150mA 30MHz 2sc536 2SC536 transistor 2sc536 noise figure hFE-200 to-92 npn ST2SC536

    2sc536

    Abstract: 2sc536 noise figure 2SC536 transistor transistor 2sC536
    Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC536 150mA 30MHz 2sc536 2sc536 noise figure 2SC536 transistor transistor 2sC536

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC536 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF 2SC536

    transistor npn C536

    Abstract: No abstract text available
    Text: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V


    Original     		PDF 2SC5361 2-10S1A transistor npn C536

    2SC5363J

    Abstract: 2SC536
    Text: Transistors 2SC5363J Silicon NPN epitaxial planar type For low-voltage high-frequency amplification 1.00±0.05 • Features 0.50 (0.50) Unit Collector-base voltage (Emitter open) VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open)


    Original     		PDF 2SC5363J 2SC5363J 2SC536

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC5363J Silicon NPN epitaxial planar type For low-voltage high-frequency amplification 1.00±0.05 • Features Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open)


    Original     		PDF 2SC5363J 25unting

    2SA60

    Abstract: 2SA608N 2SC536N IT00504 IT00498 2SC536
    Text: Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Capable of being used in the low frequency to high frequency range. unit:mm 2164 [2SA608N/2SC536N]


    Original     		PDF ENN6324 2SA608N/2SC536N 2SA608N/2SC536N] 2SA608N 2SA60 2SA608N 2SC536N IT00504 IT00498 2SC536

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC536S TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-92S 2SC536S 100MHz

    c5368

    Abstract: transistor npn C536 2SC5368
    Text: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V


    Original     		PDF 2SC5368 c5368 transistor npn C536 2SC5368

    transistor npn C536

    Abstract: C5361 2SC5361
    Text: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V


    Original     		PDF 2SC5361 transistor npn C536 C5361 2SC5361

    NEC 2561 LE 401

    Abstract: la 7433 ltg 0351 6605 SP LTG 0222 Ic fr 9888
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTO R FOR MICROWAVE AM PLIFICATION FEATURES PACKAGE DIMENSION in mm • High f j 2.1 ±0.1 14 G H z TYP. 1.25+0.1 • High gain * -► 1 1 6 , 5 A X 1


    OCR Scan     		PDF 2SC5369 NEC 2561 LE 401 la 7433 ltg 0351 6605 SP LTG 0222 Ic fr 9888

    Ic fr 9888

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTO R FOR MICROWAVE AMPLIFICATION PACKAGE DIMENSION in mm FEATURES • H ig h fT 2 . 1± 0.1 14 G H z T Y P . • H ig h gain | S 2i e | 2 = 1 4 d B T Y P . o o @ f = 2 GHz, V


    OCR Scan     		PDF 2SC5369 Ic fr 9888

    2SC5361

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5361 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS Unit in mm 1 0 .3 M A X . 1.32 • Excellent Switching Times : tf = 0.5 jus Max. (l£ = 1.2 A)


    OCR Scan     		PDF 2SC5361 2SC5361

    2SC5361

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5361 2SC5361 TO S H IB A TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm SW ITCH IN G REGULATOR APPLICATIO NS HIGH V O LTAG E SW ITCHING APPLICATIO NS 10.3MAX. DC-DC CONVERTER APPLICATIO NS • • • 1.32 Excellent Switching Times : tf = 0.5 /¿s Max. (l£ = 1.2 A)


    OCR Scan     		PDF 2SC5361 2SC5361

    2SC5360

    Abstract: 5360
    Text: TO SH IBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS • • • High Voltage Small Collector Output Capacitance High Transition Frequency = 300V Cob = 5.0pF Typ. fT = 100MHz (Typ.) V CE O MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan     		PDF 2SC5360 2SC5360 5360

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5361 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 10.3MAX DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf = 0.5 /us Max. (Iq = 1.2 A)


    OCR Scan     		PDF 2SC5361

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS • • • High Voltage Small Collector Output Capacitance High Transition Frequency VCEO=300V Cob = 5.0pF Typ. fT =100MHz (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5360 100MHz

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS U n it in mm 10 ±0.3 • High Voltage ^3.2 ±0.2 2.71Q.2 : VCEO = 300V • Sm all Collector Output Capacitance : Cob = 5.0pF Typ. • High Transition Frequency


    OCR Scan     		PDF 2SC5360 100MHz

    2SC5361

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5361 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 10.3MAX. DC-DC CONVERTER APPLICATIONS • • • 1.32 Excellent Switching Times : tf = 0.5 /us Max. (l£ = 1.2 A)


    OCR Scan     		PDF 2SC5361

    2SC5368

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5368 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5368 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS ¿3.1 ±0.1 5.8 DC-DC CONVERTER APPLICATIONS ÏHigh Speed : tr = 0.5/^s (Max. , tf=0.3/*s (Max.) (IC = 0.8A)


    OCR Scan     		PDF 2SC5368 100ms 2SC5368