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    2SK1120 Search Results

    2SK1120 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK1120 Toshiba TRANS MOSFET N-CH 1000V 8A 3(2-16C1B) Original PDF
    2SK1120 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK1120 Toshiba N-Channel MOSFET Original PDF
    2SK1120 Toshiba Original PDF
    2SK1120 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1120 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1120 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1120 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1120 Unknown Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications Scan PDF
    2SK1120 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications Scan PDF
    2SK1120 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(pi-MOSII.5) Scan PDF
    2SK1120(F) Toshiba 2SK1120 - TRANSISTOR 8 A, 1000 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power Original PDF
    2SK1120(F,T) Toshiba 2SK1120 - Trans MOSFET N-CH 1KV 8A 3-Pin TO-3P(W) T/R Original PDF

    2SK1120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR k1120

    Abstract: k1120
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


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    PDF 2SK1120 2-16C1B TRANSISTOR k1120 k1120

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


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    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    k1120

    Abstract: TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current


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    PDF 2SK1120 k1120 TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA

    TRANSISTOR k1120

    Abstract: 2sk1120
    Text: 2SK1120 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current


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    PDF 2SK1120 TRANSISTOR k1120 2sk1120

    k1120

    Abstract: TRANSISTOR k1120 TRANSISTOR k1120 Package Toshiba 2sk1120 2SK1120
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Unit: mm


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    PDF 2SK1120 k1120 TRANSISTOR k1120 TRANSISTOR k1120 Package Toshiba 2sk1120 2SK1120

    2SK1120

    Abstract: k1120
    Text: 2SK1120 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅡ.5 2SK1120 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 1.5Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。


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    PDF 2SK1120 2SK1120 k1120

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


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    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    K1120

    Abstract: TRANSISTOR k1120 2SK1120 DATA 2SK1120
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


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    PDF 2SK1120 K1120 TRANSISTOR k1120 2SK1120 DATA 2SK1120

    k1120

    Abstract: TRANSISTOR k1120 2SK1120
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


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    PDF 2SK1120 k1120 TRANSISTOR k1120 2SK1120

    TRANSISTOR k1120

    Abstract: k1120 2SK1120 power device k1120
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.0 S (typ.)


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    PDF 2SK1120 TRANSISTOR k1120 k1120 2SK1120 power device k1120

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    HA17805P

    Abstract: hitachi j100 HA17812P J5001 TLG223 r346 rectifier ha17805 nihon cement sg 403 varistor transistor c373
    Text: HA16141/42, HA16341/42 PFC and PWM Controller, Redundant Secondary Switching Power Supply Controller Application Note ADE-504-005 Z Rev.0 Apr. 2002 Hitachi Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,


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    PDF HA16141/42, HA16341/42 ADE-504-005 HA17812P IC307 HA17431UA HA16341NT HA16341/42 HA17805P hitachi j100 J5001 TLG223 r346 rectifier ha17805 nihon cement sg 403 varistor transistor c373

    transistor 2SK1120

    Abstract: CL226 2SK1120
    Text: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


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    PDF 2SK1120 --300nA transistor 2SK1120 CL226 2SK1120

    transistor 2SK1120

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII -5 IN D U S T R IA L A P P L IC A T IO N S U n it in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance


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    PDF 2SK1120 transistor 2SK1120

    Untitled

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE nr-MOSn 2SK1120 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. SWITCHING POWER SUPPLY APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. A FEATURES: •Low Drain-Source ON Resistance : RDS(0N)=1.5ß (Typ.)


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    PDF 2SK1120 20kfl 10raA,

    2SK1120 DATA

    Abstract: 2SK1120
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2 S K 1 120 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II • 5 (2SK1120) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.


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    PDF 2SK1120 2SK1120) 2SK112Û 2SK1120 DATA 2SK1120

    2SK1120

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 4.0S (Typ.)


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    PDF 2SK1120 -l-50 2SK1120

    Untitled

    Abstract: No abstract text available
    Text: 2SK1120 TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE tt- M O S I I -5 2 S K 1 120 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS : Rd S(ON) 1 5 .9 M A X -


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    PDF 2SK1120 max300

    2SK1120

    Abstract: toshiba l40 SC-65
    Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 1 5.9 M A X. • Low Drain-Source ON Resistance


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    PDF 2SK1120 2SK1120 toshiba l40 SC-65

    Untitled

    Abstract: No abstract text available
    Text: 2SK1120 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm • Low Drain-Source ON Resistance


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    PDF 2SK1120

    transistor 2SK1603

    Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
    Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all


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    PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358