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    Panasonic Electronic Components 2SK122800L

    MOSFET N-CH 50V 50MA MINI3-G1
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    KEMET Corporation A72SK1220AA00K

    CAP FILM AXL POLYPROP FOIL
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    2SK122 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK1221 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1221 Fuji Electric N-Channel Silicon Power MOS-FET Scan PDF
    2SK1221 Fuji Electric TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A Scan PDF
    2SK1221 Fuji Electric N-CHANNEL SILICON MOS-FET Scan PDF
    2SK1221 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1221 Unknown FET Data Book Scan PDF
    2SK1221-01 Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK1222 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1222 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1222 Unknown FET Data Book Scan PDF
    2SK1222-01 Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK1223 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1223 Unknown FET Data Book Scan PDF
    2SK1223 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1223 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK1223 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK1224 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1224 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1224 Unknown FET Data Book Scan PDF
    2SK1224-01 Collmer Semiconductor MOSFET Transistors Scan PDF

    2SK122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1228-(TX)

    Abstract: No abstract text available
    Text: 2SK1228 Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS Unit : mm For switching +0.2 2.8 –0.3 +0.25 ● 2.5V drive possible 1.45 Gate-protection diode built-in 1 3 +0.1 ● 0.65±0.15 Gate-Source voltage VGSO 10 V Drain current ID ±50 mA Max drain current


    Original     		PDF 2SK1228 2SK1228-(TX)

    2SK1228

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS FET For switching unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05 ● High-speed switching ● Wide frequency band ● Incorporating a built-in gate protection-diode


    Original     		PDF 2SK1228 2SK1228

    2SK1228

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS FET For switching Unit: mm (0.65) 2 1 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings (Ta = 25°C) Unit Drain to Source voltage VDS 50 V Gate to Source voltage VGSO 10 V Drain current ID 50


    Original     		PDF 2SK1228 2SK1228

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Drain-source voltage


    Original     		PDF 2002/95/EC) 2SK1228

    2SK1228

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Unit Drain-source voltage


    Original     		PDF 2002/95/EC) 2SK1228 2SK1228

    2sk1221

    Abstract: 2SK122
    Text: 2SK1221 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage TO-220AB VGSS=±30V Guarantee Applications Switching regulators UPS DC-DC converters


    Original     		PDF 2SK1221 O-220AB O-220AB SC-46 2sk1221 2SK122

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05


    Original     		PDF 2002/95/EC) 2SK1228

    2SK1228

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05 Unit Drain-source voltage VDS 50 V Gate-source voltage (Drain open)


    Original     		PDF 2SK1228 2SK1228

    2SK1221

    Abstract: No abstract text available
    Text: 2SK1221 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage TO-220AB VGSS=±30V Guarantee Applications Switching regulators UPS DC-DC converters


    Original     		PDF 2SK1221 O-220AB SC-46 2SK1221

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05


    Original     		PDF 2002/95/EC) 2SK1228

    2sk122

    Abstract: 2SK1228
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1228 Silicon N-channel MOSFET Unit : mm For switching circuits 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Peak drain current Power dissipation Channel temperature


    Original     		PDF 2002/95/EC) 2SK1228 2sk122 2SK1228

    2SK1228

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS FET For switching unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05 ● High-speed switching ● Wide frequency band ● Incorporating a built-in gate protection-diode


    Original     		PDF 2SK1228 2SK1228

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211

    2sk1507

    Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01

    2SK1229

    Abstract: 2ROPT
    Text: l— 2SK1229 — - Preliminary SIE D • 44^205 DOIITÔT T06 ■ H I T 4 GaAsN-Channel HEMT ■ OUTLINE DRAWING SHF Converter RF Amplifier HITACHI/ OPTOELECTRONICS ■FEATURES • Low Noise, High Gain


    OCR Scan     		PDF 2SK1229 12GHz) 2SK1229 2ROPT

    2SK1012

    Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1012 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102

    2SK1229

    Abstract: No abstract text available
    Text: 2SK1229 Preliminary GaAsN-ChannelHEM T OUTLINE DRAWING SHF Converter RF Amplifier =T ajys to im . _ 1 .7 8 ± 0 .4 4m in. T N •FEA TURES • Low N o ise , H igh G ain N F = 1 .0 d B typ. G a = l l d B typ. f = 12G H z 05Ì0.15 3 ¿ 1 .8 ± 0 .4 MUXIMUM CHANNEL DISSIPATION


    OCR Scan     		PDF 2SK1229 2SK1229

    Untitled

    Abstract: No abstract text available
    Text: 2SK1221 FUJI P O W E R M O S - F E T N -CIIANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • Hich speed switching • Low on-resistance 4.5*“ • No secondary breakdown tM[ j • Low driving power y- • Hich voltage • VCcS= ±30V Guarantee


    OCR Scan     		PDF 2SK1221 SC-46

    SS3200

    Abstract: 2SK1223
    Text: Power F-MOS FET 2SK1223 Silicon N-channel Power F-MOS FET Package Dimensions •Features • • • • Low ON resistance R ds on : R Ds (on) 1 = 0 .02ft (typ.) High switching rate : tf = 350ns (typ.) No secondary breakdown High breakdown voltage Unit: mm


    OCR Scan     		PDF 2SK1223 350ns Vds-10V, VGS-10V, ID-25A SS3200 2SK1223

    2SK1223

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1223 2SK1223 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R d s on : R DS (on) 1 = 0 .0 2 il (typ.) Unit: mm • High switching ra te : t( = 350ns (typ.) 5.3max. 20.5max. 3.0- • No secondary breakdown


    OCR Scan     		PDF 2SK1223 350ns 2SK1223

    2sk1221

    Abstract: IR LFN T151
    Text: 2SK1221 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II • Features SERIES lOutline Drawings • Hich speed switching • Low orvresistance ,4 .5 * « • No secondary breakdown 05.6*^ 10*$^ '"'i R-“< M | • Low driving power i • Hich voltage


    OCR Scan     		PDF 2SK1221 O-22QAB SC-46 Tc-25Â EaTS30 2sk1221 IR LFN T151

    2SK1221-01

    Abstract: No abstract text available
    Text: COL L HE R S E M I C O N D U C T O R INC b3E D • 5 2 3 8 7^ 2 0 0 0 1 Ô7 1 541 « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvpe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01


    OCR Scan     		PDF 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1222-01 2SK1015-01 2SK1916-01

    2SK1223

    Abstract: No abstract text available
    Text: P o w er F-MOS FET 2SK1223 2S K 1223 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R d s on : R DS (on) 1 = 0 .02i! (ty p .) • High sw itching ra te : t f= 350ns (typ.) • No secondary breakdow n U nit: mm 5.3m ax.


    OCR Scan     		PDF 2SK1223 350ns 2SK1223

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737