Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD2461 Search Results

    2SD2461 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2461 Toshiba NPN Transistor Original PDF
    2SD2461 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2461 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2461 Toshiba Silicon NPN transistor for power amplifier applications Scan PDF
    2SD2461 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF

    2SD2461 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D2461

    Abstract: 2SD2461
    Text: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SD2461 D2461 2SD2461 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SD2461 PDF

    2SD2461

    Abstract: D2461 transistor d2461
    Text: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) · Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Maximum Ratings (Ta = 25°C)


    Original     		2SD2461 2SD2461 D2461 transistor d2461 PDF

    D2461

    Abstract: 2SD2461
    Text: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Maximum Ratings (Ta = 25°C)


    Original     		2SD2461 D2461 2SD2461 PDF

    D2461

    Abstract: 2SD2461
    Text: 2SD2461 東芝トランジスタ シリコンNPN三重拡散形 2SD2461 ○ 低周波電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 5 V, IC = 0.1 A) 飽和電圧が低い。 : VCE (sat) = 0.3 V (標準) (IC = 0.5 A, IB = 5 mA)


    Original     		2SD2461 20070701-JA D2461 2SD2461 PDF

    d2461

    Abstract: 2SD2461 transistor d2461
    Text: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Maximum Ratings (Ta = 25°C)


    Original     		2SD2461 d2461 2SD2461 transistor d2461 PDF

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220 PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322 PDF

    2SD2461

    Abstract: No abstract text available
    Text: 2SD2461 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e ( s a t ) “ 0.3V (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SD2461 2SD2461 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm P O W E R A M P L IF IE R A P P L IC A T IO N S • • High DC Current Gain : hF£ = 800—3200 Vc e = 5V, Ic = 0.1A Low Collector Saturation Voltage : v CE(sat) = °-3V (Typ.) (Ic = 0.5A, Iß = 5mA) M A X IM U M


    OCR Scan     		2SD2461 PDF

    D2461

    Abstract: transistor d2461
    Text: 2SD2461 TOSHIBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2S D2461 Unit in mm Rn+n ? High DC Current Gain : hpj] i = 800~3200 Low Collector Saturation Voltage : V ^ e (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		2SD2461 D2461 D2461 transistor d2461 PDF

    2SD2461

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2461 2SD2461 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 8.0 ± 0.2 • • High DC Current Gain : hpg i = 800~3200 Low Collector Saturation Voltage : V q £ (sat) = 0.3V (Typ.) 25°C) CHARACTERISTIC


    OCR Scan     		2SD2461 2SD2461 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD2461 2SD2461 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm ftn + n y • • High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e (sat) = 0-3V (Typ.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SD2461 PDF

    2SD2461

    Abstract: No abstract text available
    Text: 2SD2461 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm 8.0 ± 0.2 • • High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e ( s a t ) “ 0.3V (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SD2461 2SD2461 PDF

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 PDF

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF