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    2SD880 Search Results

    2SD880 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD880 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SD880 Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
    2SD880 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SD880 Continental Device India TO-220 NPN Power Package Transistors Scan PDF
    2SD880 Mospec POWER TRANSISTORS(3A,60V,30W) Scan PDF
    2SD880 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD880 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD880 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD880 Unknown Scan PDF
    2SD880 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD880 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD880 Unknown Shortform Data and Cross References (Misc Datasheets) Scan PDF
    2SD880 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2SD880 Unknown Shortform Transistor PDF Datasheet Scan PDF
    2SD880 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD880 Unknown Cross Reference Datasheet Scan PDF
    2SD880 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD880 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD880 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD880 Unknown Catalog Scans - Shortform Datasheet Scan PDF
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    2SD880 Price and Stock

    Micro Commercial Components 2SD880-Y-BP

    TRANS NPN 60V 3A TO220AB
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    Micro Commercial Components 2SD880-Q-BP

    TRANS NPN 60V 3A TO220AB
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    Micro Commercial Components 2SD880-GR-BP

    TRANS NPN 60V 3A TO220AB
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    Samtec Inc TW-30-12-S-D-880-125

    CONN BRD STACK 2.00 60POS
    Free Sample
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    DigiKey TW-30-12-S-D-880-125 Bulk 1
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    Avnet Americas TW-30-12-S-D-880-125 Bulk 1
    • 1 $17.16
    • 10 $16.24
    • 100 $11.38
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    Mouser Electronics TW-30-12-S-D-880-125
    • 1 $17.16
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    Onlinecomponents.com TW-30-12-S-D-880-125
    • 1 $20.02
    • 10 $17.8
    • 100 $12.37
    • 1000 $8.01
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    Powell Electronics TW-30-12-S-D-880-125 30 1
    • 1 $17.16
    • 10 $162.4
    • 100 $1138
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    Master Electronics TW-30-12-S-D-880-125
    • 1 $20.02
    • 10 $17.8
    • 100 $12.37
    • 1000 $8.01
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    Samtec Inc TW-30-12-S-D-880-105

    CONN BRD STACK 2.00 60POS
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TW-30-12-S-D-880-105 Bulk 1
    • 1 $21.24
    • 10 $21.24
    • 100 $21.24
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    Avnet Americas TW-30-12-S-D-880-105 Bulk 1
    • 1 $17.16
    • 10 $16.24
    • 100 $11.38
    • 1000 $11.38
    • 10000 $11.38
    		Buy Now
    Mouser Electronics TW-30-12-S-D-880-105
    • 1 $17.16
    • 10 $16.24
    • 100 $11.38
    • 1000 $4.93
    • 10000 $4.93
    		Get Quote
    Onlinecomponents.com TW-30-12-S-D-880-105
    • 1 $20.02
    • 10 $17.8
    • 100 $12.37
    • 1000 $8.01
    • 10000 $8.01
    		Buy Now
    Powell Electronics TW-30-12-S-D-880-105 30 1
    • 1 $17.16
    • 10 $162.4
    • 100 $1138
    • 1000 $1138
    • 10000 $1138
    		Buy Now
    Master Electronics TW-30-12-S-D-880-105
    • 1 $20.02
    • 10 $17.8
    • 100 $12.37
    • 1000 $8.01
    • 10000 $8.01
    		Buy Now
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    2SD880 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD880L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L

    2sd880 equivalent

    Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD880 O-220 2SB834 500mA 300mA 2sd880 equivalent 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2SD880 Plastic-Encapsulate Transistors NPN TO—220 Features Power dissipation PCM: 1.5 W Tamb=25℃ Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER


    Original     		PDF 2SD880 500mA 300mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low Frequency Power Amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD880 O-220 2SB834 500mA 300mA

    2SD880Y

    Abstract: VCEO-60V 2SD880-Y 2SD880
    Text: SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W Technical Data …designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage


    Original     		PDF 2SD880Y O-220 2SD880Y VCEO-60V 2SD880-Y 2SD880

    UTC2SD880

    Abstract: 2sd880 equivalent 2SB834 2SD880 QW-R203-013
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 300mA 500mA 500mA, QW-R203-013 UTC2SD880 2sd880 equivalent 2SB834

    2SB834

    Abstract: 2sb834 equivalent 2sd880 equivalent 2SD880
    Text: Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1


    Original     		PDF 2SB834 O-220 2SD880 2SB834 2sb834 equivalent 2sd880 equivalent 2SD880

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD880 Features • • • NPN Silicon Power Transistors With TO-220 package Power amplifier applications


    Original     		PDF 2SD880 O-220 O-220 50mAdc,

    2sd880y

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SD880 2SD880-Q 2SD880-Y 2SD880-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates


    Original     		PDF 2SD880 2SD880-Q 2SD880-Y 2SD880-GR O-220 2sd880y

    2sd880y

    Abstract: 100-200Q
    Text: MCC TM Micro Commercial Components 2SD880-Q 2SD880-Y 2SD880-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates


    Original     		PDF 2SD880-Q 2SD880-Y 2SD880-GR 2sd880y 100-200Q

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 3A Collector-base voltage V BR CBO : 60 V Operating and storage junction temperature range


    Original     		PDF O-220 2SD880 100TYP 540TYP

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 300mA 500mA 500mA,

    transistor d325

    Abstract: B511 transistor 3DD325 B511 TIP31c PNP Transistor D325 D325 transistor 3CD511 3a npn to220 transistor npn transistor 3A
    Text: TRANSISTOR TO-220 PLASTIC-ENCAPSULATE BIPOLAR TRANSISTOR HFE PC I C B vcbo B vceo mW (mA) (V) (V) MIN MAX I C (mA) V ce (sat) V ce (V) (V) IC (mA) Ib (mA) fT (MHz) PIN ARRAY SUBSTITUTE TYPE 5 BCE 2SD880 50 BCE 3DD325 200 -500 -3 -1 -1500 -150 50 BCE 3CD511


    Original     		PDF O-220 2SD880 3DD325 3CD511 2SB834 TIP31C TIP32C TIP41C TIP42C transistor d325 B511 transistor 3DD325 B511 TIP31c PNP Transistor D325 D325 transistor 3CD511 3a npn to220 transistor npn transistor 3A

    mx 2sb834

    Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
    Text: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO


    Original     		PDF O-220 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 mx 2sb834 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073

    Untitled

    Abstract: No abstract text available
    Text: TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO—220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF O-220 2SD880 500mA 300mA

    2sd880 equivalent

    Abstract: 2SD880 2SB834
    Text: 2SD880 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ! TO-220 Complement to 2SB834 ABSOLUTE MAXIMUM RATINGS TA=25oC Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC)


    Original     		PDF 2SD880 O-220 2SB834 2sd880 equivalent 2SD880 2SB834

    2sd880 equivalent

    Abstract: 2SB834 2SD880 2sD880 TRANSISTOR
    Text: PNP 2SB834 EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD880 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation(Tc=25°C)


    Original     		PDF 2SB834 O-220 2SD880 2sd880 equivalent 2SB834 2SD880 2sD880 TRANSISTOR

    2s0880

    Abstract: 2SB83 250880 2SB834 2SD880 e50V 2sD880 TRANSISTOR
    Text: ÆfcMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for use in audio frequency power amplifier applications 2SD880 FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf 1 0 V (Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 60-300 lc= 0.5A * Complememtary to PNP 2SB834


    OCR Scan     		PDF 2SB834 2SD880 2SD880 2s0880 2SB83 250880 2SB834 e50V 2sD880 TRANSISTOR

    toshiba 2sd425

    Abstract: 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD287C 2SD1391 2SD313 2SD867
    Text: - m « € T y p e No. ' d 2SD 288 ^ 2SD 289 y B V B « a c 2SD 290 ^ 2SD 291 / 2SD 232 —• * 2SD 287 * 2SD 287C * * Manuf. h m SANYO 1m K 2 TOSHIBA A 2SD2023 V - — 2SD867 2SD1135 2SD1897 V - — 2SD880 2SD1135 2SD2023 ¿0UÖÖU ZÔU113ÏI ZSUZUZ3 * 2SD 312


    OCR Scan     		PDF 2SD287 2SD287C 2SD288 2SD289 2SD425 2SD425 2SD313 2SD313 2SD880 toshiba 2sd425 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD1391 2SD867

    Untitled

    Abstract: No abstract text available
    Text: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae


    OCR Scan     		PDF 2SB834 2SD880 -50mA -500mA -300mA -10VIe

    2SB834

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : VcE sat =-l-OV(Max.) at Ic=-3A, Ib =-0.3A . Collector Power Dissipation : PC=30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SB834 2SD880. -50mA, 20/taec 100v200 2SB834

    2SD880

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . High DC Current Gain : b p E = 3 0 0 M a x . (VCE=5V, IC=0.5A) 10.3M A X ¡z ¡5 6 ± 0 .a . Low Saturation Voltage : VCE(sat)=1.0V(Max.)(IC=3A, IB=0.3A)


    OCR Scan     		PDF 2SD880 2SB834. 50X50xlmmA^ 2SD880

    2SB834

    Abstract: 2S8834 transistor 2s8834 2SD880
    Text: ÆàMOSPEC PNP SILICON POWER TRANSISTORS .designed for use in audio frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage v CE satf 1 OV(Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 60-200@lc= 0.5A * Complememtary to NPN 2SD880


    OCR Scan     		PDF 2SD880 2SB834 2S8834 transistor 2s8834 2SD880

    Untitled

    Abstract: No abstract text available
    Text: 2SD880 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ♦Conplei I P lary to 2SB834 ABSOLUTE M AXIM UM RATINGS a t Tam h=25V C haracteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2SD880 2SB834 500mA 300mA