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    2SA1892 Search Results

    2SA1892 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1892 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TPS; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC5029 Original PDF
    2SA1892 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1892 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1892 Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan PDF
    2SA1892 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF
    2SA1892O Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1892Y Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF

    2SA1892 Datasheets Context Search

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    2SA1892

    Abstract: 2SC5029
    Text: 2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1892 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) • High collector power dissipation: PC = 1.3 W


    Original     		PDF 2SA1892 2SC5029 2SA1892 2SC5029

    2SA1892

    Abstract: 2SC5029
    Text: 2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1892 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W


    Original     		PDF 2SA1892 2SC5029 2SA1892 2SC5029

    A1892

    Abstract: No abstract text available
    Text: 2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1892 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W


    Original     		PDF 2SA1892 2SC5029 A1892

    A1892

    Abstract: 2SA1892 2SC5029
    Text: 2SA1892 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1892 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A, IB = −0.05 A)


    Original     		PDF 2SA1892 2SC5029 20070701-JA A1892 2SA1892 2SC5029

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    Untitled

    Abstract: No abstract text available
    Text: 2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5029 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) • High collector power dissipation: PC = 1.3 W


    Original     		PDF 2SC5029 2SA1892

    C5029

    Abstract: 2SA1892 2SC5029
    Text: 2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5029 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) • High collector power dissipation: PC = 1.3 W


    Original     		PDF 2SC5029 2SA1892 C5029 2SA1892 2SC5029

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    C5029

    Abstract: 2SA1892 2SC5029
    Text: 2SC5029 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC5029 通 信 工 業 用 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm : VCE (sat) = 0.5 V (最大) 飽和電圧が低い。 (IC = 1 A, IB = 0.05 A)


    Original     		PDF 2SC5029 2SA1892 20070701-JA C5029 2SA1892 2SC5029

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2SA1892

    Abstract: 2SC5029
    Text: TO SH IBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation


    OCR Scan     		PDF 2SA1892 2SC5029 2SA1892 2SC5029

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1892 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 892 PO W ER AM PLIFIER APPLICATIONS U nit in mm PO W ER SWITCHING APPLICATIONS Low Collector Saturation Voltage : V e E ( s a t ) = - ° - 5V (Max.) High Power Dissipation


    OCR Scan     		PDF 2SA1892 2SC5029

    2SA1892

    Abstract: 2SC5029 sh03
    Text: TO SH IBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation


    OCR Scan     		PDF 2SA1892 2SC5029 2SA1892 2SC5029 sh03

    2SA1892

    Abstract: 2SC5029
    Text: T O S H IB A 2SA1892 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 892 PO W ER AM PLIFIER APPLICATIONS U n it in mm PO W ER SWITCHING APPLICATIONS Lo w C o llecto r S a tu ra tio n V o ltag e : V e E ( s a t )= - ° -5V (Max.) H ig h P o w e r D issip a tio n


    OCR Scan     		PDF 2SA1892 2SC5029 2SA1892 2SC5029

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1892 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1892 PO W ER AM PLIFIER APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VcE (sat)= —0.5V (Max.) : P 0 = 1.3W • High Power Dissipation


    OCR Scan     		PDF 2SA1892 2SC5029

    2SA1892

    Abstract: 2SC5029
    Text: TOSHIBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS • • • • 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation


    OCR Scan     		PDF 2SA1892 2SC5029 2SA1892

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : v CE(sat) = °-5V (Max.) • High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)


    OCR Scan     		PDF 2SC5029 2SA1892

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PRO CESS INDUSTRIAL APPLICATIONS PO W ER AMPLIFIER APPLICATIONS. PO W ER SW ITCH IN G APPLICATIONS. • • • Low Collector Saturation Voltage : VCE (sat)= —0.5V (M ax .)(Ic= -1 A ) High Speed Switching Time : tst,g= 1.0/iS (Typ.)


    OCR Scan     		PDF 2SC5029 2SA1892 --10mA, --10V, 20/us

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SA1892

    Abstract: 2SC5029
    Text: TO SH IBA 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 Unit in mm POWER SWITCHING APPLICATIONS • • • • Low Saturation Voltage • VCE (sat) = °-5V (Max-) High Collector Power Dissipation : Pç; = 1.3W (Ta = 25°C)


    OCR Scan     		PDF 2SC5029 2SA1892 2SA1892 2SC5029