B906
Abstract: 2SB906 2SD1221
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
|
Original
|
2SB906
2SD1221
B906
2SB906
2SD1221
|
PDF
|
transistor B906
Abstract: 2SB906 7B1A B-906 B906 2SD1221
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。
|
Original
|
2SB906
2SD1221
transistor B906
2SB906
7B1A
B-906
B906
2SD1221
|
PDF
|
transistor B906
Abstract: B906 2SB906 2SD1221 B-906
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
|
Original
|
2SB906
2SD1221
transistor B906
B906
2SB906
2SD1221
B-906
|
PDF
|
D1221
Abstract: 2SD1221 2SB906
Text: 2SD1221 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SD1221 ○ 低周波電力増幅用 単位: mm • 飽和電圧が低い。 • コレクタ損失が大きい。 : PC = 20 W (Tc = 25°C) • 2SB906 とコンプリメンタリになります。
|
Original
|
2SD1221
2SB906
20070701-JA
D1221
2SD1221
2SB906
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
|
Original
|
2SB906
2SD1221
|
PDF
|
2SB906
Abstract: 2SD1221 D1221
Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
|
Original
|
2SD1221
2SB906
2SB906
2SD1221
D1221
|
PDF
|
2SB906
Abstract: 2SD1221 B906
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
|
Original
|
2SB906
2SD1221
2SB906
2SD1221
B906
|
PDF
|
D1221
Abstract: 2SB906 2SD1221
Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)
|
Original
|
2SD1221
2SB906
D1221
2SB906
2SD1221
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)
|
Original
|
2SD1221
2SB906
|
PDF
|
2sd1221 toshiba
Abstract: D1221 2SB906 2SD1221
Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)
|
Original
|
2SD1221
2SB906
2sd1221 toshiba
D1221
2SB906
2SD1221
|
PDF
|
B906
Abstract: 2SB906 2SD1221
Text: 2SB906 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB906 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.0 V (標準) (IC = −3 A, IB = −0.3 A) • コレクタ損失が大きい。 • 2SD1221 とコンプリメンタリになります。
|
Original
|
2SB906
2SD1221
20070701-JA
B906
2SB906
2SD1221
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)
|
Original
|
2SD1221
2SB906
|
PDF
|
B906
Abstract: 2SB906 2SD1221
Text: 2SB906 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB906 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.0 V (標準) (IC = −3 A, IB = −0.3 A) • コレクタ損失が大きい。 • 2SD1221 とコンプリメンタリになります。
|
Original
|
2SB906
2SD1221
B906
2SB906
2SD1221
|
PDF
|
transistor
Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N
|
Original
|
2SD1160
2SD1140
2SD1224
2SD1508
2SD1631
2SD1784
2SD2481
2SB907
2SD1222
2SD1412A
transistor
power transistor npn to-220
PNP POWER TRANSISTOR TO220
transistor PNP
damper diode
Darlington transistor
2SD2206A
power transistor
npn darlington
transistor TO220
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat =0.4V(Typ.) (Ic=3A, Ib =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C) . Complementary to 2SB906 MAXIMUM RATINGS (Ta=25°C)
|
OCR Scan
|
2SD1221
2SB906
2SD122
|
PDF
|
2SB906
Abstract: 2SD1221
Text: TO SH IB A 2SD1221 T O S H IB A T RA N SIST O R SILICON NPN TRIPLE D IFFUSED T Y PE PCT PRO CESS 2 S D 1 221 A U D IO FR EQ U EN C Y P O W E R A M P L IF IE R A PPLIC A TIO N • U n it in mm Low Collector S aturation V oltage : V CE (sat) = °-4 v (TyP-)
|
OCR Scan
|
2SD1221
ce-30
2SB906
2SD1221
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB906 Unit in inm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES : . Low Collector Saturation Voltage : V C E sat =-1.0V(Typ.) (Ic— 3A, IB =-0.3A) 5.2±0.2 j . High Power Dissipation : Pç=20W (Tc-25°C) . Complementary to 2SD1221
|
OCR Scan
|
2SB906
68MAX.
Tc-25
2SD1221
-50mA,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1221 2 S D 1 221 T O SH IB A TRA NSISTO R SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY P O W ER AM PLIFIER A PPLICATIO N • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-> High Power Dissipation : P0 = 20 W
|
OCR Scan
|
2SD1221
2SB906
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION U nit in mm 6.8MAX. (A) • 5.2 Low Collector Saturation Voltage ±0.2 c J : V CE (sat) = °-4 v (Typ.) • High Power Dissipation : P q = 20 W
|
OCR Scan
|
2SD1221
2SB906
|
PDF
|
2SD1221
Abstract: 2sd1221 toshiba 2SB906
Text: 2SD1221 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Unit in mm Low Collector Saturation Voltage : VCE (sat) - °-4 v (Typ.) High Power Dissipation : Pg = 20 W
|
OCR Scan
|
2SD1221
2SB906
2SD1221
2sd1221 toshiba
|
PDF
|
2SB906
Abstract: 2SD1221 2sd1221 toshiba
Text: TO SHIBA 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P0 = 2OW Complementary to 2SB906
|
OCR Scan
|
2SD1221
2SB906
2SD1221
2sd1221 toshiba
|
PDF
|
V30010
Abstract: 20W power transistor
Text: TOSHIBA 2SD1221 ^Transistor Silicon NPN Triple Diffused Type PCT Process Audio Frequency Power Amplifier Applications F e a tu re s • Low Collector Saturation Voltage - ^CE (Satj = 0.4V (Typ.) (Iq = 3A, lB = 0.3A) • High Power Dissipation - Pc = 20W (Tc = 25~C )
|
OCR Scan
|
2SD1221
2SB906
150LLECTOR-EMITTER
V30010
20W power transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • • • (A) Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P q = 20W
|
OCR Scan
|
2SD1221
2SB906
95MAX
--50mA,
|
PDF
|
IC 933
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS -2SD1221 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 6 8 max . FEATURES: 5 O ci . Low Collector Saturation Voltage : VCE(sat)=0.4V(Typ.) (IC=3A, IB=0.3A) j . High Power Dissipation : Pc=20W (Tc=25°C)
|
OCR Scan
|
-2SD1221
2SB906
Ta-25
2SD1221
50X50X08mt
IC 933
|
PDF
|
