2SD2012 Search Results

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STMicroelectronics 2SD2012 TRANS NPN 60V 3A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD2012	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	2SD2012		14			1 $1.957 10 $1.5656 100 $1.1742 1000 $1.1742 10000 $1.1742	Buy Now
Vyrian	2SD2012		240			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	2SD2012		40,000			1 - 10 - 100 - 1000 $0.1529 10000 $0.131	Buy Now
Micro Commercial Components 2SD2012-BP TRANS NPN 60V 3A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD2012-BP	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SD2012 TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SD2012		937			1 $2.868 10 $2.868 100 $2.868 1000 $1.0755 10000 $1.0755	Buy Now
	2SD2012		99			1 $0.45 10 $0.45 100 $0.3 1000 $0.3 10000 $0.3	Buy Now
Toshiba America Electronic Components 2SD2012(F) Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	2SD2012(F)		39,000			1 - 10 - 100 - 1000 $0.218 10000 $0.189	Buy Now

2SD2012 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD2012	STMicroelectronics	TRANS GP BJT NPN 60V 3A 3TO-220F	Original	PDF
2SD2012	Toshiba	Audio Frequency Power Amplifier	Original	PDF
2SD2012	Toshiba	Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Transistor for AC-DC converter; Application Scope: switching regulator; Part Number: 2SB1375	Original	PDF
2SD2012	Various Russian Datasheets	Transistor	Original	PDF
2SD2012	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD2012	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD2012	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD2012	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD2012	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD2012	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD2012	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD2012	Toshiba	Silicon NPN transistor for audio frequency power amplifier applications	Scan	PDF
2SD2012	Toshiba	TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE	Scan	PDF
2SD2012	Toshiba	NPN Transistor	Scan	PDF

2SD2012-BP	Micro Commercial Components	TRANSISTOR TO-92 MOD	Original	PDF
2SD2012(F,M)	Toshiba	2SD2012 - TRANSISTOR NPN 60V 3A TO-220	Original	PDF

2SD2012 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	2SD2012	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	2SD2012	PDF
2SD2012 Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC)	Original	2SD2012 O-220F 2SD2012	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	2SD2012	PDF
Untitled Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# Micro Commercial Components 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	2SD2012	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2012 TO-220F TRANSISTOR NPN 1. BASE FEATURES z Audio Frequency Power Amplifier Applications z High DC Current Gain z Low Saturation Voltage z High Power Dissipation	Original	O-220F 2SD2012 O-220F	PDF
Untitled Abstract: No abstract text available Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2SD2012	PDF
2sd2012 Abstract: No abstract text available Text: 2SD2012 NPN SILICON POWER TRANSISTOR • ■ ■ HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS ■ GENERAL PURPOSE SWITCHING ■ DESCRIPTION The 2SD2012 is a silicon NPN power transistor	Original	2SD2012 2SD2012 O-220F O-220F	PDF
transistor d2012 Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012 Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2SD2012 transistor d2012 d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012	PDF
transistor d2012 Abstract: d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Unit: mm Absolute Maximum Ratings (Ta = 25°C)	Original	2SD2012 transistor d2012 d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba	PDF
Untitled Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components 2SD2012 Features • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	2SD2012 O-220F	PDF
2SB1375 Abstract: 2sb1375 transistor Text: 2SB1375 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features 2 3 High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012	Original	2SB1375 O-220 O-220 2SD2012 -50mA 2sb1375 transistor	PDF
2sd2012 Abstract: 2SB1366 2SB136 Text: Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W TC=25℃ APPLICATIONS ·Audio frequency power amplifier and	Original	2SD2012 O-220F 2SB1366 O-220F) 2sd2012 2SB1366 2SB136	PDF
2SB1375 Abstract: 2SD2012 Text: Inchange Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation:	Original	2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012	PDF

transistor d2012 Abstract: d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012 Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2SD2012 transistor d2012 d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012	PDF
2sd2012 transistor Abstract: 2sd2012 2SB1375 Text: TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features • High DC Current Gain : 100 Min. • Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) • High Power Dissipation	Original	2SD2012 2SB1375 2sd2012 transistor 2sd2012 2SB1375	PDF
D2012 toshiba Abstract: transistor d2012 d2012 transistor br d2012 transistor 2SD2012 Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2SD2012 2-10R1A D2012 toshiba transistor d2012 d2012 transistor br d2012 transistor 2SD2012	PDF
B1375 Abstract: 2SB1375 2SD2012 Text: 2SB1375 東芝トランジスタシリコンPNP三重拡散形 2SB1375 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −2 A, IB = −0.2 A) • コレクタ損失が大きい。 • 2SD2012 とコンプリメンタリになります。	Original	2SB1375 2SD2012 2-10R1A 20070701-JA B1375 2SB1375 2SD2012	PDF
Untitled Abstract: No abstract text available Text: 2SD2012 TO SHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P q = 25W (Tc = 25°C)	OCR Scan	2SD2012	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TY P E 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in . High DC Current Gain : 100 Min. 1Q3IIAX . Low Saturation Voltage 0 3 .2 ± Q 2 /- W' : VcE(sat)-l-0V(Max.)(Ic-2A, Ib =0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)	OCR Scan	2SD2012 O-220	PDF
transistor 2sd2012 Abstract: 2sd2012 Text: 2SD2012 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE 1 - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C)	OCR Scan	2SD2012 transistor 2sd2012 2sd2012	PDF
Untitled Abstract: No abstract text available Text: 2SD2012 T O SH IB A 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 ± 0 .3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P(] = 25W (Tc = 25°C)	OCR Scan	2SD2012	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm . High DC Current Gain : 100 Min. ia3MAX, 0 zz ± a z . Low Saturation Voltage : VCE(sat) = l*OV(Max.)(IC=2A, IB=0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)	OCR Scan	2SD2012 O-220 10E1A	PDF
2SD2Q12 Abstract: No abstract text available Text: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2Q12 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , $ 3.2 ± 0.2 2.7 ± 0 2 High DC C urrent Gain : IrpE 1 = 100 (Min.) Low Saturation Voltage V’ nVy.ci T w _( .»_ ai.\	OCR Scan	2SD2012 2SD2Q12 2SD2Q12	PDF

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2SD2012 Datasheets (16)

2SD2012 Datasheets Context Search

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2SB1375

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B1375

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2SD2Q12