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Toshiba America Electronic Components 2SB1375,CLARIONF(M TRANS PNP 60V 3A TO-220NIS
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Toshiba America Electronic Components 2SB1375
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2SB1375 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB1375	Toshiba	Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Low-Frequency Power Transistor; Part Number: 2SD2012	Original	PDF
2SB1375	Various Russian Datasheets	Transistor	Original	PDF
2SB1375	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB1375	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB1375	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SB1375	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SB1375	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SB1375	Unknown		Scan	PDF
2SB1375	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB1375	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB1375	Unknown	AUDIO FREQUENCY POWER AMPLIFIER	Scan	PDF
2SB1375	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB1375	Toshiba	Silicon PNP transistor for audio frequency power amplifiers	Scan	PDF
2SB1375	Toshiba	TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE	Scan	PDF

2SB1375,CLARIONF(M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 3A 60V TO220-3	Original	PDF
2SB1375(F)	Toshiba	2SB1375 - TRANSISTOR PNP 60V 3A TO-220	Original	PDF

2SB1375 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
b1375 transistor Abstract: B1375 b1375, transistor transistor B1375 2SB1375 Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin	Original	2SB1375 2SD2012 2-10R1A b1375 transistor B1375 b1375, transistor transistor B1375 2SB1375	PDF
b1375 transistor Abstract: b1375 transistor B1375 b1375, transistor 2SB1375 2SD2012 Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin	Original	2SB1375 2SD2012 b1375 transistor b1375 transistor B1375 b1375, transistor 2SB1375 2SD2012	PDF
2SB1375 Abstract: 2sb1375 transistor Text: 2SB1375 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features 2 3 High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012	Original	2SB1375 O-220 O-220 2SD2012 -50mA 2sb1375 transistor	PDF
2SB1375 Abstract: 2SD2012 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1375 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -0.2A)	Original	2SB1375 2SD2012 -50mA 2SB1375 2SD2012	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1375 TO-220 TRANSISTOR PNP 1. BASE FEATURES z High Power Dissipation: PC=25W(TC=25℃) z Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) z Collector metal(Fin)is Coverd with Mold Regin	Original	O-220 2SB1375 O-220 2SD2012 -50mA	PDF
2SB1375 Abstract: 2SD2012 Text: Inchange Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation:	Original	2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012	PDF
b1375 transistor Abstract: B1375 b1375, transistor transistor B1375 2SB1375 B137 2SD2012 Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin	Original	2SB1375 2SD2012 b1375 transistor B1375 b1375, transistor transistor B1375 2SB1375 B137 2SD2012	PDF
2SB1375 Abstract: 2SD2012 Text: JMnic Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation: PC=25W(TC=25℃)	Original	2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012	PDF
B1375 Abstract: 2SB1375 2SD2012 Text: 2SB1375 東芝トランジスタシリコンPNP三重拡散形 2SB1375 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −2 A, IB = −0.2 A) • コレクタ損失が大きい。 • 2SD2012 とコンプリメンタリになります。	Original	2SB1375 2SD2012 2-10R1A 20070701-JA B1375 2SB1375 2SD2012	PDF
2SD2012 Abstract: 2SB1375 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1375 TO-220 TRANSISTOR PNP 1. BASE FEATURES z High Power Dissipation: PC=25W(TC=25℃) z Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) z Collector metal(Fin)is Coverd with Mold Regin	Original	O-220 2SB1375 O-220 2SD2012 -50mA 2SD2012 2SB1375	PDF
2SB1375 Abstract: 2sb1375 equivalent 2SD2012 Text: SavantIC Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2012 ·Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 )	Original	2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2sb1375 equivalent 2SD2012	PDF
transistor Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220 Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N	Original	2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220	PDF
b1375 transistor Abstract: b1375 Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin	Original	2SB1375 2SD2012 b1375 transistor b1375	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF

Untitled Abstract: No abstract text available Text: T O S H IB A 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 ì 0.3 Low Saturation Voltage : V^ e sat = —1-5V (Max.) (IC= -2 A , IB = —0.2A) High Power Dissipation : P q = 25W (Tc = 25°C)	OCR Scan	2SB1375 2SD2012	PDF
2SB1375 Abstract: 2SD2012 transistor 2sd2012 Text: 2SB1375 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • • • • Low Saturation Voltage : V^ e sat ~ —1-5V (Max.) (In = —2A, IB = -0 .2A ) High Power Dissipation : P£ = 25W (Te = 25°C)	OCR Scan	2SB1375 2SD2012 2SB1375 transistor 2sd2012	PDF
Untitled Abstract: No abstract text available Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1375 U nit in mm A U D IO FREQUENCY PO W ER AMPLIFIER. I0±0.3 • • • • 0 3 .2±o .2 24* 0.2 Low Saturation Voltage : V çE sat = —1.5V (Max.) (IC = -2 A , IB = —0.2A) High Power Dissipation : P ç = 25W (Tc = 25°C)	OCR Scan	2SB1375 2SD2012 2-10R1A	PDF
2SB1375 Abstract: 2SD2012 2sd2012 transistor Text: TOSHIBA 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • Low Saturation Voltage : sat “ —1-5V (Max.) (IC= —2A, IB = —0.2A) • High Power Dissipation : P0 = 25W (Te = 25°C) • Collector Metal (Fin) is Coverd with Mold Regin	OCR Scan	2SB1375 2SD2012 2SB1375 2SD2012 2sd2012 transistor	PDF
2SB1375 Abstract: 2SD2012 Text: 2SB1375 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • • • • Low Saturation Voltage : V^ e sat ~ —1-5V (Max.) (In = —2A, IB = -0 .2 A ) High Power Dissipation : P£ = 25W (Te = 25°C)	OCR Scan	2SB1375 2SD2012 2SB1375	PDF
S2520 Abstract: No abstract text available Text: TOSHIBA 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 5 ^ R 1 3 7 5 mm h it • mm m mm Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 + 0.3 Low Saturation Voltage : V c e sat = —1-5V (Max.) (IC - —2A, IB ——0.2A) High Power Dissipation \ P^ —2-5W (Tc —25°C)	OCR Scan	2SB1375 2SD2012 S2520	PDF
2sb1375 transistor Abstract: 2SB1375 Text: TO SHIBA 2SB1375 Transistor Unit in mm Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Features • Low Saturation Voltage - VCE sat = -1 .5V(Max.) de = -2A, lB = -0.2A) • High Power Dissipation - Pc = 25W (Te = 25~C) • Collector Metal (Fin) is covered with m old resin	OCR Scan	2SB1375 1ui-10 2sb1375 transistor 2SB1375	PDF
Untitled Abstract: No abstract text available Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1375 AUDIO FREQUENCY POWER AMPLIFIER. Unit in mm 10 ± 0 . 3 . Low Saturation Voltage : VcE sat =-l.5V(Max.) . 0 3 . 2 i 0.2 2. 7 ± 0. 2 -f~ (IC=-2A, Ib =-0.2A) . High Power Dissipation : Pc=25W (Tc=25°C) . Collector Metal(Fin) is Coverd with Mold Regin	OCR Scan	2SB1375 2SD2012	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)	OCR Scan	O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346	PDF
C3182N Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855 Text: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn	OCR Scan	2SA51 2SA57 2SC3281 2SD1571 C3182N C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855	PDF

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2SB1375 Price and Stock

Toshiba America Electronic Components 2SB1375,CLARIONF(M

Toshiba America Electronic Components 2SB1375

2SB1375 Datasheets (16)

2SB1375 Datasheets Context Search

b1375 transistor

b1375 transistor

2SB1375

2SB1375

Untitled

2SB1375

b1375 transistor

2SB1375

B1375

2SD2012

2SB1375

transistor

b1375 transistor

sn76131

Untitled

2SB1375

Untitled

2SB1375

2SB1375

S2520

2sb1375 transistor

Untitled

Transistor 2SA 2SB 2SC 2SD

C3182N