d1222
Abstract: 2sd1222 equivalent 2sD1222 2SB907
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)
|
Original
|
2SD1222
2SB907.
15transportation
d1222
2sd1222 equivalent
2sD1222
2SB907
|
PDF
|
D1222
Abstract: 2SB907 2SD1222
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
|
Original
|
2SD1222
2SB907.
D1222
2SB907
2SD1222
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
|
Original
|
2SD1222
2SB907.
|
PDF
|
D1222
Abstract: 2SB907 2SD1222
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
|
Original
|
2SD1222
2SB907.
D1222
2SB907
2SD1222
|
PDF
|
d1222
Abstract: No abstract text available
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
|
Original
|
2SD1222
2SB907.
d1222
|
PDF
|
transistor
Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N
|
Original
|
2SD1160
2SD1140
2SD1224
2SD1508
2SD1631
2SD1784
2SD2481
2SB907
2SD1222
2SD1412A
transistor
power transistor npn to-220
PNP POWER TRANSISTOR TO220
transistor PNP
damper diode
Darlington transistor
2SD2206A
power transistor
npn darlington
transistor TO220
|
PDF
|
D1222
Abstract: 2SD1222 2SB907
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)
|
Original
|
2SD1222
2SB907.
15transportation
D1222
2SD1222
2SB907
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
|
Original
|
2SD1222
2SB907.
|
PDF
|
D1222
Abstract: 2SB907 2SD1222
Text: 2SD1222 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SD1222 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)
|
Original
|
2SD1222
2SB907
20070701-JA
D1222
2SB907
2SD1222
|
PDF
|
D1222
Abstract: 2SB907 2SD1222
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
|
Original
|
2SD1222
2SB907.
D1222
2SB907
2SD1222
|
PDF
|
D1222
Abstract: 2SB907 2SD1222
Text: 2SD1222 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SD1222 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)
|
Original
|
2SD1222
2SB907
D1222
2SB907
2SD1222
|
PDF
|
2SB907
Abstract: B-907 B907 2SD1222
Text: 2SB907 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SB907 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)
|
Original
|
2SB907
2SD1222
20070701-JA
2SB907
B-907
B907
2SD1222
|
PDF
|
sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
|
Original
|
2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
|
PDF
|
transistor B907
Abstract: No abstract text available
Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •
|
Original
|
2SB907
2SD1222.
transistor B907
|
PDF
|
|
|
MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
|
Original
|
BD157
BD158
BD159
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJE494
2SC1419
BD 804
2SD675
MJE104
BD581
BD135 CURVES
MJ1000
DTS-4041
2N5037
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SD1222 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High DC Current Gain : ^FE i =2000(Min.) (Vq e =2V, Ic =1A) . Low Saturation Voltage •' VcE(sat)=l-5V(Max.) (Ic=2A)
|
OCR Scan
|
2SD1222
2SB907.
|
PDF
|
2sd1222 equivalent
Abstract: 2SB907 2SD1222
Text: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm (A) HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX., POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; . • •
|
OCR Scan
|
2SD1222
95MAX.
2SB907.
2sd1222 equivalent
2SB907
2SD1222
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD1222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) WÊÊF mmr SWITCHING APPLICATIONS. U n it in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 5.2+ 0.2 POWER AMPLIFIER APPLICATIONS. j E E if c lL . ö M AX J 0.6tf-
|
OCR Scan
|
2SD1222
2SB907.
|
PDF
|
2SD1222
Abstract: 2sd1222 equivalent
Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1222 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm Cl6 MAX. FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A) . Low Saturation Voltage
|
OCR Scan
|
2SD1222
2SB907.
2SD1222
2sd1222 equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1222 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm H A M M E R DRIVE, PULSE M O TOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : h^E (1) = 2000 (Min.)
|
OCR Scan
|
2SD1222
2SB907.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.)
|
OCR Scan
|
2SD1222
2SB907.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1222 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 222 SWITCHING APPLICATIONS U nit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX. (A) 5.2 ±0.2 c PO W ER AM PLIFIER APPLICATIONS 0.6 i 0.15 • High DC Current Gain
|
OCR Scan
|
2SD1222
1V11I1W
2SB907.
|
PDF
|
2SB907
Abstract: 2SD1222
Text: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm (A) HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX., POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; . • •
|
OCR Scan
|
2SD1222
95MAX.
2SB907.
2SB907
2SD1222
|
PDF
|
2SB907
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB907 U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. High DC Current Gain : hFE(l) =2000 (Min.) (Vc e = - 2V, I c = - 1 A ) Low Saturation Voltage
|
OCR Scan
|
-2SB907
2SD1222.
2SB907
2SB907
|
PDF
|
