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    2SA1905 Search Results

    2SA1905 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1905 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TPS; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC5076 Original PDF
    2SA1905 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1905 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1905 Toshiba Silicon PNP transistor for high current switching applications Scan PDF
    2SA1905 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF

    2SA1905 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5076

    Abstract: 2SC5076 IC404 2SA1905
    Text: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1905


    Original     		PDF 2SC5076 2SA1905 c5076 2SC5076 IC404 2SA1905

    A1905

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1905 2SC5076
    Text: 2SA1905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1905 High-Current Switching Applications. Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC5076


    Original     		PDF 2SA1905 2SC5076 A1905 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1905 2SC5076

    2SC5076

    Abstract: 2SA1905 C5076
    Text: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1905


    Original     		PDF 2SC5076 2SA1905 2SC5076 2SA1905 C5076

    C5076

    Abstract: No abstract text available
    Text: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1905


    Original     		PDF 2SC5076 2SA1905 C5076

    A1905

    Abstract: 2SA1905 2SC5076
    Text: 2SA1905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1905 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 s (typ.) • Complementary to 2SC5076


    Original     		PDF 2SA1905 2SC5076 A1905 2SA1905 2SC5076

    2SA1905

    Abstract: 2SC5076 A1905
    Text: 2SA1905 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1905 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = −0.4 V (最大) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		PDF 2SA1905 2SC5076 20070701-JA 2SA1905 2SC5076 A1905

    Untitled

    Abstract: No abstract text available
    Text: 2SA1905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1905 High-Current Switching Applications. Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC5076


    Original     		PDF 2SA1905 2SC5076

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    l 836

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCH IN G APPLICATIONS. • • • U n it in m m Low Collector Saturation Voltage : VCE (sat) = 0-4V (Max.) (at Ic = 3A) High Speed Switching Time : tg tg ^ .O ^ s (Typ.) Complementary to 2SA1905 tipi


    OCR Scan     		PDF 2SA1905 l 836

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1905 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 9 Q5 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm 8.0 ± 0.2 Low Collector Saturation Voltage tm : VCE (sat)~ —0.4V (Max.) TTicrVi S t ip p H S w itrh in c r • - ö l/ g


    OCR Scan     		PDF 2SA1905 2SC5076

    2SA1905

    Abstract: 2SC5076
    Text: TOSHIBA 2SA1905 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 905 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm 8.0 ± 0.2 • Low Collector Saturation Voltage : VCE (sat)= - ° - 4V (Max.) • High Speed Switching : ts^g^l.O/^s (Typ.)


    OCR Scan     		PDF 2SA1905 2SC5076 2SA1905 2SC5076

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : • • High Speed Switching Time Complementary to 2SA1905 SÍI + D5 = ^-4V (Max.) (at Ic = 3A)


    OCR Scan     		PDF 2SC5076 2SA1905 961001EAA2

    2SA1905

    Abstract: 2SC5076
    Text: TO SH IBA 2SA1905 2 S A 1 90 5 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat)~ —0.4V (Max.) • High Speed Switching : tgtg^l.O/^s (Typ.) • Complementary to 2SC5076


    OCR Scan     		PDF 2SA1905 2SC5076 2SA1905 2SC5076

    Untitled

    Abstract: No abstract text available
    Text: 2SA1905 T O SH IB A 2 S A 1 905 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • 8.0 ± 0.2 Low Collector Saturation Voltage : v C E (s a t)= -° -4V (Max.) High Speed Switching : ts^g= 1 .0 / y s (Typ.)


    OCR Scan     		PDF 2SA1905 2SC5076

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TY PE PCT PRO CESS HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Speed Switching Time : tgtg=1.0/iS (Typ.) Complementary to 2SC5076 in nr


    OCR Scan     		PDF 2SC5076 --10mA,

    2SA19

    Abstract: 2SA1905 2SC5076
    Text: TO SH IBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • 8.0 ±0 .2 Low Collector Saturation Voltage : Vq^ ( s a t ) “ 0.4V (Max.) (at Ic = 3A) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SC5076 2SA1905 2SA19 2SA1905 2SC5076

    2SA1905

    Abstract: 2SC5076
    Text: TO SH IBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector - Saturation Voltaere 0 : Vnxr \OCOj/ = 0.4V - - - (Max.) V ✓ (at Ic = 3A) High Speed Switching Time


    OCR Scan     		PDF 2SC5076 2SA1905

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5076 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 HIGH CURRENT SWITCHING APPLICATIONS • U n it in mm Low C ollector S atu ra tio n V o ltage : V ^ e ( s a .t ) = 0-4V (M ax.) (a t I C = 3A ) • H ig h Speed S w itch in g Tim e


    OCR Scan     		PDF 2SC5076 2SA1905

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS i <;r * n i g HIGH CURRENT SWITCHING APPLICATIONS U nit in mm 8.0 ± 0.2 • Low Collector Saturation Voltage : V q e ( s a t ) “ 0.4V (Max.) (at I c = 3A) • High Speed Switching Time


    OCR Scan     		PDF 2SC5076 2SA1905