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    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SB906-Y(TE16L1,NQ

    TRANS PNP 60V 3A PW-MOLD
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    2SB906-Y(TE16L1,NQ Digi-Reel 1
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    Mouser Electronics 2SB906-Y(TE16L1,NQ 1,882
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    Chip One Stop 2SB906-Y(TE16L1,NQ Cut Tape 1,735 0 Weeks, 1 Days 5
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    Toshiba America Electronic Components 2SB906-Y(TE16L1,NQ)

    Transistors
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    Toshiba America Electronic Components 2SB906-YTE16L

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    2SB906 Datasheets (20)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    2SB906 Kexin Silicon PNP Epitaxial Original PDF
    2SB906 Toshiba Silicon PNP Transistor Original PDF
    2SB906 Toshiba PNP transistor Original PDF
    2SB906 TY Semiconductor Silicon PNP Epitaxial - TO-252 Original PDF
    2SB906 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB906 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB906 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB906 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB906 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB906 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB906 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB906 Unknown Cross Reference Datasheet Scan PDF
    2SB906 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB906 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB906 Toshiba Silicon PNP transistor for audio frequency power amplifier applications Scan PDF
    2SB906 Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) Scan PDF
    2SB906-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB906-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB906-Y(TE16L1,NQ Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 60V 3A PW-MOLD Original PDF
    2SB906-Y(TE16L1,NQ) Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP 60V 3A PW-MOLD Original PDF

    2SB906 Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat =0.4V(Typ.) (Ic=3A, Ib =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C) . Complementary to 2SB906 MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		2SD1221 2SB906 2SD122 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB906 Unit in inm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES : . Low Collector Saturation Voltage : V C E sat =-1.0V(Typ.) (Ic— 3A, IB =-0.3A) 5.2±0.2 j . High Power Dissipation : Pç=20W (Tc-25°C) . Complementary to 2SD1221


    OCR Scan     		2SB906 68MAX. Tc-25 2SD1221 -50mA, PDF

    B906

    Abstract: 2SB906 2SD1221
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		2SB906 2SD1221 B906 2SB906 2SD1221 PDF

    transistor B906

    Abstract: 2SB906 7B1A B-906 B906 2SD1221
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。


    Original     		2SB906 2SD1221 transistor B906 2SB906 7B1A B-906 B906 2SD1221 PDF

    transistor B906

    Abstract: B906 2SB906 2SD1221 B-906
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		2SB906 2SD1221 transistor B906 B906 2SB906 2SD1221 B-906 PDF

    rj25

    Abstract: 2SB906 2SD1221
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Low Collector Saturation Voltage : VcE(sat) = -1 .0 V (Typ.) (IC = - 3 A, IB = -0 .3 A) High Power Dissipation : P q = 20 W (Tc = 25°C)


    OCR Scan     		2SB906 2SD1221 rj25 2SB906 2SD1221 PDF

    D1221

    Abstract: 2SD1221 2SB906
    Text: 2SD1221 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SD1221 ○ 低周波電力増幅用 単位: mm • 飽和電圧が低い。 • コレクタ損失が大きい。 : PC = 20 W (Tc = 25°C) • 2SB906 とコンプリメンタリになります。


    Original     		2SD1221 2SB906 20070701-JA D1221 2SD1221 2SB906 PDF

    20W power transistor

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES: . Low Collector Saturation Voltage : VcE(sat)— l-OV(Typ.) (IC=-3A, IB=-0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)


    OCR Scan     		2SB906 2SD1221 68MAX. -50mA, 20W power transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		2SB906 2SD1221 PDF

    2SB906

    Abstract: 2SD1221 D1221
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 2SB906 2SD1221 D1221 PDF

    2SB906

    Abstract: 2SD1221 B906
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		2SB906 2SD1221 2SB906 2SD1221 B906 PDF

    D1221

    Abstract: 2SB906 2SD1221
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 D1221 2SB906 2SD1221 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SB906 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • U nit in mm Low Collector Saturation Voltage : VCE (sat)= -1 -0 V (Typ.) (IC = - 3 A , IB = -0 .3 A ) • High Power Dissipation : P q = 20W (Tc = 25°C)


    OCR Scan     		2SB906 2SD1221 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB906- SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATION. (a) • • • Low Collector Saturation Voltage : VCE(sat)= —1.0V(Typ.) (ic = —3A, IB = -0 .3 A ) High Power Dissipation : P c = 20W (Tc = 25',C)


    OCR Scan     		2SB906· 2SD1221 95MAX 2SB906 PDF

    2SB927

    Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
    Text: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O


    OCR Scan     		2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M 2SB930 2SD1253A 2SD1254 2SB927 2SB930 2SB813 2SB903 2SB904 2SB905 2SB907 2SB908 PDF

    2SB906

    Abstract: 2SD1221 2sd1221 toshiba
    Text: TO SHIBA 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P0 = 2OW Complementary to 2SB906


    OCR Scan     		2SD1221 2SB906 2SD1221 2sd1221 toshiba PDF

    2sd1221 toshiba

    Abstract: D1221 2SB906 2SD1221
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 2sd1221 toshiba D1221 2SB906 2SD1221 PDF

    B906

    Abstract: 2SB906 2SD1221
    Text: 2SB906 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB906 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.0 V (標準) (IC = −3 A, IB = −0.3 A) • コレクタ損失が大きい。 • 2SD1221 とコンプリメンタリになります。


    Original     		2SB906 2SD1221 20070701-JA B906 2SB906 2SD1221 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB906 Transistor Silicon PNP Triple Diffused Type PCT Process Audio Frequency Power Amplifier Applications Features • Low Collector Saturation Voltage - VCE (sat) = -1 -0V (Typ.) (Ic = 3A, lB = -0.3A) • High Power Dissipation - Pc = 20W (Te = 25°=C)


    OCR Scan     		2SB906 2SD1221 PDF

    2SB906

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial 2SB906 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector saturation voltage. Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1


    Original     		2SB906 O-252 -50mA, 2SB906 PDF

    2SB906

    Abstract: 2SD1221
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Low Collector Saturation Voltage : VcE(sat) = -1 .0 V (Typ.) (IC = - 3 A, IB = -0 .3 A) High Power Dissipation : P q = 20 W (Tc = 25°C)


    OCR Scan     		2SB906 2SD1221 2SB906 2SD1221 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • Low Collector Saturation Voltage : V cE (sat) = - 1 .0 V (Typ.) (IC = - 3 A, IB = - 0 .3 A) High Power Dissipation : P@ = 20 W (Tc = 25°C)


    OCR Scan     		2SB906 2SD1221 961001EAA2 ll200 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		2SD1221 2SB906 PDF

    B906

    Abstract: 2SB906 2SD1221
    Text: 2SB906 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB906 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.0 V (標準) (IC = −3 A, IB = −0.3 A) • コレクタ損失が大きい。 • 2SD1221 とコンプリメンタリになります。


    Original     		2SB906 2SD1221 B906 2SB906 2SD1221 PDF