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    Toshiba America Electronic Components 2SA1160-B(TE6,F,M)

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    2SA1160 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1160 Toshiba TRANS GP BJT PNP 10V 2A 3(2-5J1A) Original PDF
    2SA1160 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA1160 Various Russian Datasheets Transistor Original PDF
    2SA1160 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1160 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1160 Unknown Cross Reference Datasheet Scan PDF
    2SA1160 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1160 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1160 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1160 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1160 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1160 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1160 Toshiba Silicon PNP transistor for medium power amplifier applications and strobe flash applications Scan PDF
    2SA1160 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1160 Toshiba TO-92MOD Audio / TV Transistors Scan PDF
    2SA1160A Toshiba TRANS GP BJT PNP 10V 2A 3(2-5J1A) Original PDF
    2SA1160A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1160B Toshiba TRANS GP BJT PNP 10V 2A 3(2-5J1A) Original PDF
    2SA1160B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1160C Toshiba TRANS GP BJT PNP 10V 2A 3(2-5J1A) Original PDF

    2SA1160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA116

    Abstract: No abstract text available
    Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1160 2SA116

    2SA1160

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2A Collector-base voltage


    Original     		PDF O-92MOD 2SA1160 O-92MOD -10mA -50mA 2SA1160

    2SA1160

    Abstract: A1160
    Text: 2SA1160 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1160 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線が良好です。 : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (最小)120 (標準) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1160 O-92MOD 20070701-JA 2SA1160 A1160

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 ＴＯ－９２ＭＯＤ TRANSISTOR（ PNP ） 1.EMITTER FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM: -2A Collector-base voltage


    Original     		PDF O-92MOD 2SA1160 -10mA 500TYP 059TYP

    2SA1160

    Abstract: A1160
    Text: 2SA1160 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1160 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線が良好です。 : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (最小)120 (標準) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1160 O-92MOD 2SA1160 A1160

    2SA1160

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1160 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V


    Original     		PDF O-92MOD 2SA1160 O-92MOD -10mA -50mA 2SA1160

    transistor A1160

    Abstract: 2SA1160 A1160 25j1A
    Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1160 transistor A1160 2SA1160 A1160 25j1A

    Untitled

    Abstract: No abstract text available
    Text: 2SA1160 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● Power dissipation PCM: 0.9 W Tamb=25℃ ● Collector current ICM: -2 A ● Collector-base voltage V(BR)CBO: -20 V


    Original     		PDF 2SA1160 O-92L -50mA 01-April-2009

    transistor A1160

    Abstract: 2SA1160 A1160
    Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1160 transistor A1160 2SA1160 A1160

    2SA1160

    Abstract: transistor A1160 A1160
    Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1160 2SA1160 transistor A1160 A1160

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 TO – 92M TO – 92M TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage


    Original     		PDF O-92MOD 2SA1160 -10mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SA1160 TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-92L 2SA1160 -10mA

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


    Original     		PDF 2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1160

    Untitled

    Abstract: No abstract text available
    Text: 2SA1160 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 160 Unit in mm STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • 5.1 MAX High DC Current Gain and Excellent hFE Linearity : hFE(l) = 140-600 (Vc e = - I V , Ic= -0 .5 A )


    OCR Scan     		PDF 2SA1160 -50mA) 100ms 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: 2SA1160 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. M E D IU M PO W ER AM PLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hp-g Linearity : hpE(l) = 140—600 (V c e = - I V , l £ = —0.5A) : hpg(2) =60 (M in.), 120 (Typ.) ( V q e = - IV , I c = -4 A )


    OCR Scan     		PDF 2SA1160 75MAX

    2SA1160

    Abstract: A1160
    Text: 2SA1160 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 160 STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. U nit in mm 5.1 MAX • High DC Current Gain and Excellent hjrg Linearity : hFE(l) = 140-600 (VC E = - I V , I c = - 0 .5 A )


    OCR Scan     		PDF 2SA1160 75MAX 961001EAA2' 2SA1160 A1160

    transistor A1160

    Abstract: 2SA1160 A1160
    Text: 2SA1160 TO SH IBA 2 S A 1 160 STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm >.1 MAX • • 8.2MAX. MEDIUM POWER AMPLIFIER APPLICATIONS High DC Current Gain and Excellent hEE Linearity : hFE(1) = 140-600 (VCE= - I V , IC= -0 .5 A )


    OCR Scan     		PDF 2SA1160 75MAX. transistor A1160 2SA1160 A1160

    2SA1161

    Abstract: TO-202MOD 2SA1198 2SA1209 2SA1156 2SA1160 2SA1163 2SA1173 2SA1182 2Sa1206
    Text: - 24 - Ta=25cC f t f c Ê f ë <Ta=25‘ C . * E P ( Í T c = 2 5 ,C ) m £ ft ffl £ 2SA1156 HV HS PSW 2SA1160 iâ V c BO VcEO (V) (V) Ice DC) Pc Pc* (A) (W) (W) leßo (max) Iß Pi) v’ cB (V) ,hF E (max) (min) V cE Ic/ I e (V) (A) [*Ef][àtyp1ÎÉ] VcE(sat


    OCR Scan     		PDF 2SA1156 2SA1160 2SA1161 SA1162 2SA1163 SA1171 2SA1199 2SA1199S 2SC2880 2SA1200 TO-202MOD 2SA1198 2SA1209 2SA1160 2SA1163 2SA1173 2SA1182 2Sa1206

    2SB1013

    Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
    Text: 60 - $! tt « Type No. 2SB 1013 v 2SB 1014 ^ 2S8 1015 - 2SB 1016 , 2SB 1017 2SB 1018 2SB 1019 « Manuf. -_ 3IC SANYO H. S S TOSHIBA b m NEC ±L HITACHI m ± FU JITSU i3 T fc' MATSUSHITA = m M IT SU B ISH I □ - Jx ROHM 2SA1160 2SB1068 2SB976 2SB1426 2SA1020


    OCR Scan     		PDF 2SA1160 2SB1068 2SB976 2SB1426 2SA1020 2SB1116 2SB621 2SB1Q44M 2SB1134 2SB1094 2SB1013 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564

    transistor A1160

    Abstract: A1160 2SA1160
    Text: 2SA1160 TO SH IBA 2 S A 1 160 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • • 5.1 MAX High DC Current Gain and Excellent hjpg Linearity : hFE(l) = 140-600 (Vc e = - 1V> Ic = -0.5A )


    OCR Scan     		PDF 2SA1160 O-92MOD --20V, transistor A1160 A1160 2SA1160

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1160 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 160 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • U nit in mm 5.1 M AX High DC C urrent Gain and Excellent hpE Linearity : h p E (l) = 140"-600 (V c e = —IV , I ç = —0.5A)


    OCR Scan     		PDF 2SA1160 --50mA) 961001EAA2'

    2Sj72

    Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
    Text: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *


    OCR Scan     		PDF 2SA1160 2SC2500 2SA1160 2SC1627A 2SC2235 2SA817A 2SA965 2SK147 2SJ72 2Sj72 transistor 2SC2655 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346