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    Toshiba America Electronic Components 2SB1667-Y(T4LNSEIQ

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    Quest Components 2SB1667-Y(T4LNSEIQ 1,581
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    • 1000 $0.714
    • 10000 $0.6248
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    Toshiba America Electronic Components 2SB1667(TE24L)

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    Quest Components 2SB1667(TE24L) 650
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    • 100 $0.675
    • 1000 $0.54
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    Toshiba America Electronic Components 2SB1667Y

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    ComSIT USA 2SB1667Y 713
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    Toshiba America Electronic Components 2SB1667-Y

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    NexGen Digital 2SB1667-Y 1,000
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    2SB1667 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1667 Kexin Silicon PNP Triple Diffused Type Original PDF
    2SB1667 TY Semiconductor Silicon PNP Triple Diffused Type - TO-252 Original PDF
    2SB1667 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1667 Toshiba TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) Scan PDF
    2SB1667(SM) Toshiba Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: Y; Package: TO-220(SM); Number Of Pins: 3; Publication Class: Low-Frequency Power Transistor Original PDF
    2SB1667SM Unknown PNP transistor Scan PDF
    2SB1667(SM) Toshiba Scan PDF
    2SB1667SM Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF

    2SB1667 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    B1667

    Abstract: 2SB1667
    Text: 2SB1667 SM 東芝トランジスタ シリコンPNP三重拡散形 2SB1667(SM) ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.7 V (最大) (IC = −3 A, IB = −0.3 A) 絶対最大定格 (Ta = 25°C) 項 目 記 号


    Original     		2SB1667 2-10S2A 20070701-JA B1667 PDF

    B1667

    Abstract: 2SB1667 W301
    Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SB1667 B1667 W301 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SB1667 2-10S2A PDF

    B1667

    Abstract: 2SB1667
    Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SB1667 B1667 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SB1667 PDF

    2SB1667

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Triple Diffused Type 2SB1667 TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 2.30 0.127 max 3 .8 0 +0.8 0.50-0.7 +0.15 5.55 -0.15 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector saturation voltage. Unit: mm


    Original     		2SB1667 O-252 -50mA, 2SB1667 PDF

    B1667

    Abstract: 2SB1667
    Text: 2SB1667 SM 東芝トランジスタ シリコンPNP三重拡散形 2SB1667(SM) ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.7 V (最大) (IC = −3 A, IB = −0.3 A) 絶対最大定格 (Ta = 25°C) 項 目 記 号


    Original     		2SB1667 2-10S2A B1667 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1667 TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 2.30 0.127 max 3 .8 0 +0.8 0.50-0.7 +0.15 5.55 -0.15 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector saturation voltage. Unit: mm +0.1 -0.1 +0.25 2.65 -0.1 6.50 +0.2 5.30-0.2


    Original     		2SB1667 O-252 -50mA, PDF

    B1667

    Abstract: 2SB1667 GENERAL SEMICONDUCTOR MARKING SM
    Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SB1667 B1667 GENERAL SEMICONDUCTOR MARKING SM PDF

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220 PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF

    2SB1667

    Abstract: No abstract text available
    Text: TO SH IBA 2SB1667 SM TO SH IB A TRANSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATIO NS • Low Collector Saturation Voltage : VcE(sat) = -1 .7 V (Max.) (IC = - 3 A, IB = -0 .3 A) 10.3M A X.


    OCR Scan     		2SB1667 2-10S2 961001EAA1 PDF

    2SB1667

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1667 SM TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VCE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) 10.3MAX. 1.32 •H*


    OCR Scan     		2SB1667 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1667ÇSM T O SH IBA TRA NSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 S M ) Unit in mm A U D IO FREQUENCY P O W ER A M PLIFIER APPLICATIO NS • Low Collector Saturation Voltage : VCE (sat) = -1 .7 V (Max.) (IC = - 3 A, IB = -0 .3 A) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SB1667Ã 961001EAA1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1667 SM TO SHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VCE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SB1667 961001EAA1 PDF

    2sb 667

    Abstract: 2SB1667
    Text: 2SB1667 SM TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VcE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) 10.3MAX. 1.32 •H*


    OCR Scan     		2SB1667 2-10S2 2sb 667 PDF

    2SB1667

    Abstract: transistor sm
    Text: 2SB1667 SM TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VcE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) 10.3MAX. 1.32 •H*


    OCR Scan     		2SB1667 transistor sm PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TENTATIVE 2SB1667 SM TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Low Collector Saturation Voltage : VCE (sat) = —1.7V (Max.) (IC = - 3 A , Iß — —0.3A) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SB1667 ----10Vf 20/zs PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF