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    2N5551C Search Results

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    2N5551C Price and Stock

    onsemi 2N5551CTA

    TRANS NPN 160V 0.6A TO92-3
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    DigiKey 2N5551CTA Ammo Pack 2,000
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    onsemi 2N5551CBU

    TRANS NPN 160V 0.6A TO92-3
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    DigiKey 2N5551CBU Bulk 10,000
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    onsemi 2N5551CYTA

    TRANS NPN 160V 0.6A TO92-3
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    DigiKey 2N5551CYTA Ammo Pack 2,000
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    Central Semiconductor Corp CP336V-2N5551-CT

    TRANS NPN 160V 0.6A DIE 1=400
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    DigiKey CP336V-2N5551-CT Tray
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    Avnet Americas CP336V-2N5551-CT Waffle Pack 6 Weeks 400
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    Central Semiconductor Corp CP336V-2N5551-CT20

    TRANS NPN 160V 0.6A DIE 1=20PCS
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    DigiKey CP336V-2N5551-CT20 Tray
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    2N5551C Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5551C Korea Electronics TRANS GP BJT NPN 160V 0.6A 3TO-92 Original PDF
    2N5551C Korea Electronics High Voltage Transistor Scan PDF
    2N5551C Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    2N5551CBU Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    2N5551CBU Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, AMP GP NPN 160V 600MA TO-92 Original PDF
    2N5551CN AUK NPN Silicon Transistor Original PDF
    2N5551CSM Semelab Bipolar NPN Device in a Hermetically Sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications Original PDF
    2N5551CTA Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    2N5551CTA Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, AMP GP NPN 160V 600MA TO-92 Original PDF
    2N5551CYTA Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, AMP GP NPN 160V 600MA TO-92 Original PDF

    2N5551C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5551 SOT23

    Abstract: 2N5551 2N5551CSM
    Text: 2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 • HERMETIC CERAMIC SURFACE MOUNT


    Original     		PDF 2N5551CSM 2N5551 2N5551 SOT23 2N5551 2N5551CSM

    Untitled

    Abstract: No abstract text available
    Text: 2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 • HERMETIC CERAMIC SURFACE MOUNT


    Original     		PDF 2N5551CSM 2N5551

    Untitled

    Abstract: No abstract text available
    Text: 2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 • HERMETIC CERAMIC SURFACE MOUNT


    Original     		PDF 2N5551CSM 2N5551

    2N5551C

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ᴌHigh Collector Breakdwon Voltage : VCBO=180V, VCEO=160V N E K ᴌLow Leakage Current. : ICBO=50nA Max. , VCB=120V


    Original     		PDF 2N5551C 100MHz 2N5551C

    Untitled

    Abstract: No abstract text available
    Text: 2N5551CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF 2N5551CSM 0/10m 17-Jul-02

    5551C

    Abstract: 2N 5551C datasheet 2N5551C
    Text: SEMICONDUCTOR 2N5551C MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 5551C K 3 No. Item 016 2 4 Marking Description 2N Series Name 5551C Device Name KEC K KEC CORP. Lot No. 016 Device Name 2000. 12. 27 Revision No : 0 Year


    Original     		PDF 2N5551C 5551C 5551C 2N 5551C datasheet 2N5551C

    2N5551C

    Abstract: 2N5551CN
    Text: 2N5551CN Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) Ordering Information


    Original     		PDF 2N5551CN 2N5551C O-92N KSD-T0C061-000 2N5551C 2N5551CN

    2N5551C

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V N E K Low Leakage Current. G D J : ICBO=50nA Max. , VCB=120V


    Original     		PDF 2N5551C 100MHz 2N5551C

    2N5551CSM

    Abstract: No abstract text available
    Text: 2N5551CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF 2N5551CSM 0/10m 2-Aug-02 2N5551CSM

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V N E K Low Leakage Current. G D J : ICBO=50nA Max. , VCB=120V


    Original     		PDF 2N5551C 100MHz

    WSP-401M

    Abstract: BD103 dms-200d bd102 transisTOR C123 2N5401C-Y DG04 rsb7 sk101 S1D2514X01
    Text: S1D2514X01 Preliminary VIDEO AMP MERGED OSD PROCESSOR FOR MONITORS VIDEO AMP MERGED OSD PROCESSOR 32-DIP-600A The S1D2514X01 is a very high frequency video amplifier & wide range OSD processor 1 chip system with I2C Bus control used in monitors. It contains 3 matched R/G/B video


    Original     		PDF S1D2514X01 32-DIP-600A S1D2514X01 S1D2514X01-D0B0 1N4148 1SS244 WSP-401M BD103 dms-200d bd102 transisTOR C123 2N5401C-Y DG04 rsb7 sk101

    2N5551B

    Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU

    DMS-200D

    Abstract: osd font transisTOR C123 RSB5 transistor c114 diagrams KB2502 WSP-401M OSD ic BPW1 BPW2
    Text: MAR. 2000 Ver 1.4 DATA SHEET KB2502 Preliminary Preliminary VIDEO AMP MERGED OSD PROCESSOR FOR MONITORS KB2502 VIDEO AMP MERGED OSD PROCESSOR 32-DIP-600A The KB2502 is a very high frequency video amplifier & wide range OSD processor 1 chip system with I2C Bus


    Original     		PDF KB2502 32-DIP-600A KB2502 1N4148 SK102 SKB01 DMS-200D osd font transisTOR C123 RSB5 transistor c114 diagrams WSP-401M OSD ic BPW1 BPW2

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


    Original     		PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    2N5551B

    Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
    Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


    Original     		PDF 2N5551- MMBT5551 MMBT5551 2N5551 OT-23 2N5551 2N5551B tr 5551 2N5551 SOT23 BR 5551 2N5551 circuit 2N5551BU BR N 5551

    WSP-401M

    Abstract: DMS-200D osd character 401M osd font RG03 transisTOR C123 rsb7 12v amp diagram QR01
    Text: S1D2502B01 Preliminary VIDEO AMP MERGED OSD PROCESSOR FOR MONITORS VIDEO AMP MERGED OSD PROCESSOR 32-DIP-600A The S1D2502B01 is a very high frequency video amplifier & wide range OSD processor 1 chip system with I2C Bus control used in monitors. It contains 3 matched R/G/B video


    Original     		PDF S1D2502B01 32-DIP-600A S1D2502B01 S1D2502B01-D0B0 SK102 SKB01 DMS-200D SKG01 WSP-401M DMS-200D osd character 401M osd font RG03 transisTOR C123 rsb7 12v amp diagram QR01

    OSD ic

    Abstract: No abstract text available
    Text: S1D2502A Preliminary VIDEO AMP MERGED OSD PROCESSOR FOR MONITORS VIDEO AMP MERGED OSD PROCESSOR 32-DIP-600A The S1D2502A is a very high frequency video amplifier & wide range OSD processor 1 chip system with I2C Bus control used in monitors. It contains 3 matched R/G/B video


    Original     		PDF S1D2502A S1D2502A 32-DIP-600A S1D2502A-D0B0 32-DIP-600A 175MHz 100uF BD102 KB2502 470uF OSD ic

    transisTOR C123

    Abstract: bd102 KB2502 KB2514 fly-back WSP-401M brt7
    Text: JAN. 2000 Ver 0.1 DATA SHEET KB2514 Preliminary Preliminary VIDEO AMP MERGED OSD PROCESSOR FOR MONITORS KB2514 VIDEO AMP MERGED OSD PROCESSOR 32-DIP-600A The KB2514 is a very high frequency video amplifier & wide range OSD processor 1 chip system with I2C Bus


    Original     		PDF KB2514 32-DIP-600A KB2514 1N4148 1SS244 transisTOR C123 bd102 KB2502 fly-back WSP-401M brt7

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N5551C

    Abstract: SAT12
    Text: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage. : VCbo=180V, VCeo=160V • Low Leakage Current. : I CB O = 5 0 n A Max. V Cb=120V


    OCR Scan     		PDF 2N5551C 100MHz 250//A 2N5551C SAT12

    2N5551C

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage. : VCbo=180V, VCeo=160V • Low Leakage Current. : ICBo=50nA Max. V Cb=120V • Low Saturation Voltage.


    OCR Scan     		PDF 2N5551C 100MHz 250//A 300//S, 2N5551C