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    KDS160 Price and Stock

    KEC KDS160-RTK/P

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    Quest Components KDS160-RTK/P 2,113
    • 1 $0.575
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    KEC KDS160E-RTL/P

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    Quest Components KDS160E-RTL/P 3,941
    • 1 $0.575
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    • 100 $0.575
    • 1000 $0.23
    • 10000 $0.2013
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    KDS160 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KDS160 Korea Electronics Switching Diode Original PDF
    KDS160 Korea Electronics Switching Diode Original PDF
    KDS160 Korea Electronics SILICON EPITAXIAL TYPE PLANAR DIODE Scan PDF
    KDS160E Korea Electronics Switching Diode Original PDF
    KDS160E Korea Electronics Switching Diode Scan PDF

    KDS160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160F TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES CATHODE MARK Small package : TFSC. Low forward voltage. C D Fast reverse recovery time. Small total capacitance. DIM A B C D E F B A MAXIMUM RATING Ta=25


    Original     		PDF KDS160F

    KDS160

    Abstract: marking UF
    Text: SEMICONDUCTOR KDS160 MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking UF 0 1 2 1 No. Item Marking Description Device Mark UF KDS160 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KDS160 KDS160 marking UF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160F TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2013. 1. 3 Revision No : 1 1/2


    Original     		PDF KDS160F

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. K L H F ・Fast Reverse Recovery Time. A ・Low Forward Voltage. 1 E ・Small Package : USC. G B CATHODE MARK FEATURES ・Small Total capacitance. 2


    Original     		PDF KDS160

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Total capacitance. G 1 G ・Fast Reverse Recovery Time. E C A ・Low Forward Voltage. B CATHODE MARK ・Small Package : ESC. 2 D F


    Original     		PDF KDS160E

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    KDS160

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F ᴌFast Reverse Recovery Time. A ᴌLow Forward Voltage. 1 E ᴌSmall Package : USC. G B CATHODE MARK FEATURES ᴌSmall Total capacitance. 2


    Original     		PDF KDS160 KDS160

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F Fast Reverse Recovery Time. A Low Forward Voltage. 1 E Small Package : USC. G B CATHODE MARK FEATURES Small Total capacitance. 2 J D C I MAXIMUM RATING Ta=25


    Original     		PDF KDS160

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    KDS160E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking UF No. 2005. 7. 18 Item Marking Description Device Mark UF KDS160E Revision No : 0 1/1


    Original     		PDF KDS160E KDS160E

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES CATHODE MARK Small package : VSC. Low forward voltage. C D 1 2 Fast reverse recovery time. Small total capacitance. B DIM A B C D E F A MAXIMUM RATING Ta=25


    Original     		PDF KDS160V

    KDS160E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ᴌFast Reverse Recovery Time. ᴌSmall Total capacitance. E 1 A ᴌLow Forward Voltage. C B CATHODE MARK ᴌSmall Package : ESC. 2 D F MAXIMUM RATING Ta=25ᴱ


    Original     		PDF KDS160E KDS160E

    KDS160

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F ・Fast Reverse Recovery Time. A ・Low Forward Voltage. 1 E ・Small Package : USC. G B CATHODE MARK FEATURES ・Small Total capacitance. 2


    Original     		PDF KDS160 KDS160

    KDS160F

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160F TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small package : TFSC. ・Low forward voltage. ・Fast reverse recovery time. ・Small total capacitance. MAXIMUM RATING Ta=25℃ CHARACTERISTIC


    Original     		PDF KDS160F 100mA KDS160F

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. E C 1 A Small Package : ESC. B CATHODE MARK FEATURES 2 D F MAXIMUM RATING Ta=25


    Original     		PDF KDS160E

    KDS160

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F ᴌFast Reverse Recovery Time. A ᴌLow Forward Voltage. 1 E ᴌSmall Package : USC. G B CATHODE MARK FEATURES ᴌSmall Total capacitance. 2


    Original     		PDF KDS160 KDS160

    amoled

    Abstract: 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S
    Text: Block Function For Recommended Item Switching Diode / SBD KDS160F/V/E, KDS12□V/E, KDR7□0F/V/E MOSFET POWER KMA2D4P20S, KMA2D3P20S ZENER KDZ33EV BRT KRA3□□V/E MOSFET AUDIO MUTING MIC DISPLAY KMA2D4P20S, KMA2D3P20S BRT KRC28□U (KRC2□□S, KRC68□T)


    Original     		PDF KDS160F/V/E, KDS12V/E, KDR70F/V/E KMA2D4P20S, KMA2D3P20S KDZ33EV KRC28U KRC68T) amoled 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S

    KDS160E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Fast Reverse Recovery Time. Small Total capacitance. 1 A Low Forward Voltage. E C B CATHODE MARK Small Package : ESC. 2 D MAXIMUM RATING Ta=25


    Original     		PDF KDS160E KDS160E

    KDS160V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES CATHODE MARK Small package : VSC. Low forward voltage. C D 1 2 Fast reverse recovery time. Small total capacitance. B DIM A B C D E F A MAXIMUM RATING Ta=25


    Original     		PDF KDS160V KDS160V

    KDS160V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS160V MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking UF No. 2005. 12. 29 Item Marking Description Device Mark UF KDS160V Revision No : 0 1/1


    Original     		PDF KDS160V KDS160V

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    KDS160E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KDS160E S il ic o n e p i t a x i a l p l a n a r t y p e d i o d e ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package : ESC. Low Forw ard Voltage. F ast Reverse Recovery Time. Small Total capacitance.


    OCR Scan     		PDF KDS160E 100mA KDS160E

    KDS160

    Abstract: No abstract text available
    Text: K EG KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KDS160 SILICON EPITAXIAL PLANAR TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package : USC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance.


    OCR Scan     		PDF KDS160 100mA KDS160