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    BPW1 Search Results

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    LM385BPW-1-2 Texas Instruments Micropower Voltage Reference 8-TSSOP 0 to 70 Visit Texas Instruments Buy
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    Vishay Vitramon VJ0805A220FXBPW1BC

    CAP CER 22PF 100V C0G/NP0 0805
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    Vishay Vitramon VJ0805A471KXBPW1BC

    CAP CER 470PF 100V C0G/NP0 0805
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    Vishay Vitramon VJ1206A560KXBPW1BC

    CAP CER 56PF 100V C0G/NP0 1206
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    Vishay Vitramon VJ0603A471KXBPW1BC

    CAP CER 470PF 100V C0G/NP0 0603
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    Vishay Vitramon VJ0805A181JXBPW1BC

    CAP CER 180PF 100V C0G/NP0 0805
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    BPW1 Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BPW12 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BPW12 Telefunken Electronic Optoelectronic Device Data Book 1977 Scan PDF
    BPW13 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BPW13 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW13 Philips Components Philips Data Book Scan Scan PDF
    BPW13 Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    BPW13 Telefunken Electronic Optoelectronic Device Data Book 1977 Scan PDF
    BPW13 Temic Semiconductors Silicon NPN Phototransistor Scan PDF
    BPW13A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW13A Telefunken Electronic Silicon NPN Epitaxial Planar Phototransistors Scan PDF
    BPW13A Temic Semiconductors Silicon NPN Phototransistor Scan PDF
    BPW13B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW13B Telefunken Electronic Silicon NPN Epitaxial Planar Phototransistors Scan PDF
    BPW13B Temic Semiconductors Silicon NPN Phototransistor Scan PDF
    BPW13C Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW13C Telefunken Electronic Silicon NPN Epitaxial Planar Phototransistors Scan PDF
    BPW13C Temic Semiconductors Silicon NPN Phototransistor Scan PDF
    BPW14 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BPW14 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW14 Philips Components Philips Data Book Scan Scan PDF

    BPW1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vt1311

    Abstract: volterra BPW10040
    Text: Fixed Inductors for Surface Mounting 表面贴装固定电感器 BPW10040 Recommended patterns DIMENSIONS/尺寸 推荐焊盘尺寸 Tolerance公差:±0.3 Unit: mm /(单位:毫米) (Unit: mm) /(单位:毫米) FEATURES/特点 •    


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    PDF BPW10040 VT1311 VT1311 100kHz 4420A LCR4284AAgilent100kHz 34420AAgilent3541 volterra BPW10040

    8239

    Abstract: BPW17 BPW17N CQY37N
    Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


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    PDF BPW17N BPW17N D-74025 20-May-99 8239 BPW17 CQY37N

    ic 8237

    Abstract: No abstract text available
    Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


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    PDF BPW16N BPW16N CQY36N 2002/95/EC 08-Apr-05 ic 8237

    BPW17

    Abstract: CQY37 BPW17N
    Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original
    PDF BPW17N BPW17N CQY37N D-74025 08-Mar-05 BPW17 CQY37

    volterra dc converter

    Abstract: Volterra BPW10040 1205AS-1002 bpw100 BPW10
    Text: Fixed Inductors for Surface Mounting 面実装用固定インダクタ BPW10040 Recommended patterns 推奨パターン図 Tolerance:±0.3 Unit: mm FEATURES (Unit: mm) 特長 •      10.0  10.0mm square and 4.0mm Max. height. Magnetically shielded, low DC resistance.


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    PDF BPW10040 VT13xx VT13xx 4420A 4284AAgilent 34420AAgilent volterra dc converter Volterra BPW10040 1205AS-1002 bpw100 BPW10

    volterra

    Abstract: BPW10040 volterra dc converter
    Text: Fixed Inductors for Surface Mounting 表面贴装固定电感器 BPW10040 Recommended patterns 推荐焊盘尺寸 Tolerance:±0.3 Unit: mm FEATURES (Unit: mm) 特点 • • • • • • 10.0 x 10.0mm square and 4.0mm Max. height. Magnetically shielded, low DC resistance.


    Original
    PDF BPW10040 VT13xx VT13xx 4420A LCR4284AAgilent 34420AAgilent3541 volterra BPW10040 volterra dc converter

    8239

    Abstract: BPW16N CQY36N
    Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original
    PDF BPW16N BPW16N CQY36N D-74025 20-May-99 8239 CQY36N

    Untitled

    Abstract: No abstract text available
    Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original
    PDF BPW17N BPW17N CQY37N 08-Apr-05

    volterra dc converter

    Abstract: volterra
    Text: Fixed Inductors for Surface Mounting 面実装用固定インダクタ BPW10040 Recommended patterns 推奨パターン図 Tolerance:±0.3 Unit: mm FEATURES (Unit: mm) 特長 •      10.0  10.0mm 角高さ4.0mm Max. 閉磁路、低直流抵抗


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    PDF BPW10040 VT13xx VT13xx 1205AS-1002 4420A 4284AAgilent 34420AAgilent volterra dc converter volterra

    Untitled

    Abstract: No abstract text available
    Text: Ferrite Inductors BPW1 0 0 4 0 Recommended patterns Tolerance ±0.3 Unit: mm (Unit: mm) FEATURES •                10.0  10.0mm square and 4.0mm Max. height. Magnetically shielded, low DC resistance. Suitable for large current


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    PDF VT13xx VT13xx BPW10040 4420A

    BPW14

    Abstract: 8337 BPW14N BPW14NC BPW14NB
    Text: BPW14N Silicon NPN Phototransistor Description BPW14N is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens, featuring a viewing angle of ±12° makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control.


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    PDF BPW14N BPW14N 25the D-74025 15-Jul-96 BPW14 8337 BPW14NC BPW14NB

    Untitled

    Abstract: No abstract text available
    Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original
    PDF BPW16N BPW16N CQY36N 200any 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


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    PDF BPW16N 2002/95/EC 2002/96/EC BPW16N 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original
    PDF BPW17N BPW17N CQY37N D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original
    PDF BPW17N 2002/95/EC 2002/96/EC BPW17N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    BPW17N

    Abstract: No abstract text available
    Text: BPW17N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original
    PDF BPW17N BPW17N D-74025 26-Mar-04

    BPW17N

    Abstract: BPW17 CQY37N
    Text: BPW17N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable


    Original
    PDF BPW17N BPW17N CQY37N D-74025 15-Jul-96 BPW17 CQY37N

    CQY36

    Abstract: BPW16N BPW16
    Text: BPW16N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable


    Original
    PDF BPW16N BPW16N D-74025 15-Jul-96 CQY36 BPW16

    BPW17N

    Abstract: CQY37N BPW17
    Text: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical


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    PDF CQY37N CQY37N BPW17N D-74025 15-Jul-96 BPW17

    BPW17

    Abstract: No abstract text available
    Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 0O TO TpaH3M CTO pbl Kofl: flrrnHaBoriHbi b TO H Ke MaKC. electronics 495 739-09-95, 644-41-29 BPW17 yron o63opa UCE0 MyBCTBHTenbHOCTb (UCE= 5B , X = 950 h m ) TnnrmH3bi 1 m A @ 1 m B t/cm 2 6ecqB eTH aa H yB C T B H T. X max


    OCR Scan
    PDF BPW17 o63opa BPW17

    BPW14

    Abstract: No abstract text available
    Text: Temic BPW14N S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P W 1 4 N is a h ig h s p e e d s ilic o n N P N e p ita x ia l p lan ar p h o to tr a n sisto r in a stan d ard T O - 1 8 h e r m e tic a lly s e a le d m eta l c a s e . Its g la s s le n s , fe a tu r in g a v ie w in g a n g le o f ± 1 2 ° m a k e s it


    OCR Scan
    PDF BPW14N BPW14

    BPW14

    Abstract: BPW14A BPW29 BPW17 BPW29 100 BPW13 BPW16/BPW17 BPW16 BPW13A
    Text: Optoelectronic devices Photo transistors Type Group Fig. Nr. Maximum ratings Characteristics - electrical + optical Aot a W > 'f’ > O at Us = 5 V, R L = 1 0 0 Q ^ CEO at 'am b = + 2 5 °c W V S pectral curve see page 71 mA MS BPW13 A B C 21 21 21 0.375


    OCR Scan
    PDF BPW13 BPW14 BPW16 BPW17 BPW29 BPW14A BPW17 BPW29 100 BPW16/BPW17 BPW16 BPW13A

    Untitled

    Abstract: No abstract text available
    Text: Temic BPW17N Semiconductors Silicon NPN Phototransistor Description BPW 17N is a silicon NPN epitaxial planar phototransis­ tor in a miniature plastic case with a + 12‘ lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable


    OCR Scan
    PDF BPW17N I5-Jut-96 15-Jul

    BPW13A

    Abstract: BPW13B K950 BPW13C BPW13 Telefunken Phototransistor npn phototransistor bpw 104 lm 1510
    Text: T e m ic bpw 13 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW13 is a high speed silicon NPN epitaxial planar phototransistor in a standard T O -18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal


    OCR Scan
    PDF BPW13 950nm fiT20CHb GG11S11 BPW13A BPW13B K950 BPW13C Telefunken Phototransistor npn phototransistor bpw 104 lm 1510