MMBT5551 Search Results

MMBT5551 Price and Stock

Filter by Manufacturer


AnBon Semi MMBT5551 HIGH VOLTAGE TRANSISTORS NPN SIL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMBT5551	Cut Tape	35,719		1	1 $0.12 10 $0.072 100 $0.12 1000 $0.02786 10000 $0.02786	Buy Now
	MMBT5551	Digi-Reel	35,719		1	1 $0.12 10 $0.072 100 $0.12 1000 $0.02786 10000 $0.02786	Buy Now
	MMBT5551	Reel	30,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.01951	Buy Now
Diotec Semiconductor AG MMBT5551 BJT SOT-23 160V 600MA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMBT5551	Cut Tape	6,876		1	1 $0.1 10 $0.06 100 $0.1 1000 $0.02736 10000 $0.02736	Buy Now
	MMBT5551	Digi-Reel	6,876		1	1 $0.1 10 $0.06 100 $0.1 1000 $0.02736 10000 $0.02736	Buy Now
	MMBT5551	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.02289	Buy Now
Mouser Electronics	MMBT5551		17,046			1 $0.1 10 $0.06 100 $0.041 1000 $0.028 10000 $0.017	Buy Now
Onlinecomponents.com	MMBT5551					1 - 10 - 100 - 1000 - 10000 $0.014	Buy Now
TME	MMBT5551		37,150		25	1 - 10 - 100 $0.0186 1000 $0.0168 10000 $0.0148	Buy Now
IBS Electronics	MMBT5551				3,000	1 - 10 - 100 - 1000 - 10000 $0.016	Buy Now
Suzhou Good-Ark Electronics Co Ltd MMBT5551 TRANSISTOR, NPN, 600MA, 160V, SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMBT5551	Digi-Reel	5,229		1	1 $0.1 10 $0.052 100 $0.1 1000 $0.02338 10000 $0.02338	Buy Now
	MMBT5551	Cut Tape	5,229		1	1 $0.1 10 $0.052 100 $0.1 1000 $0.02338 10000 $0.02338	Buy Now
EVVO Semiconductor MMBT5551 TRANS NPN 160V 0.6A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMBT5551	Cut Tape	2,760		1	1 $0.11 10 $0.069 100 $0.11 1000 $0.02655 10000 $0.02655	Buy Now
	MMBT5551	Digi-Reel	2,760		1	1 $0.11 10 $0.069 100 $0.11 1000 $0.02655 10000 $0.02655	Buy Now
SLKOR MMBT5551 160V 300MW 80@10MA,5V 600MA NPN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMBT5551	Digi-Reel			1	1 $0.1 10 $0.046 100 $0.1 1000 $0.01733 10000 $0.01733	Buy Now
	MMBT5551	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.01399	Buy Now
	MMBT5551	Cut Tape			1	1 $0.1 10 $0.046 100 $0.1 1000 $0.01733 10000 $0.01733	Buy Now

Find more MMBT5551 price and stock on Findchips.com

MMBT5551 Datasheets (49)

Part	Manufacturer	Description	Datasheet Type	PDF
MMBT5551	Diodes	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	Original	PDF
MMBT5551	Diodes	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	Original	PDF
MMBT5551	Fairchild Semiconductor	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 160V SOT-23	Original	PDF
MMBT5551	Fairchild Semiconductor	NPN General Purpose Amplifier	Original	PDF
MMBT5551	Fairchild Semiconductor	NPN General Purpose Amplifier	Original	PDF
MMBT5551	Fairchild Semiconductor	NPN General Purpose Amplifier	Original	PDF
MMBT5551	Galaxy Semi-Conductor Holdings	NPN General Purpose Transistor	Original	PDF
MMBT5551	Kexin	NPN Transistors	Original	PDF
MMBT5551	National Semiconductor	NPN General Purpose Amplifier	Original	PDF
MMBT5551	Sinyork	Mini size of Discrete semiconductor elements	Original	PDF
MMBT5551	TY Semiconductor	TY Equivalent - NPN Transistors - SOT-23	Original	PDF
MMBT5551	Weitron	High Voltage NPN Transistors	Original	PDF
MMBT5551	Zowie Technology	HIGH VOLTAGE TRANSISTOR NPN SILICON	Original	PDF
MMBT5551	Diodes	Surface Mount Transistors / MOSFET Devices	Scan	PDF

MMBT5551	Motorola	European Master Selection Guide 1986	Scan	PDF
MMBT5551	Motorola	NPN silicon high voltage transistor.	Scan	PDF
MMBT5551	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MMBT5551	National Semiconductor	Surface Mount Transistors	Scan	PDF
MMBT5551	National Semiconductor	Sulface Mount Transistors	Scan	PDF
MMBT5551	National Semiconductor	High Voltage Amplifier	Scan	PDF

MMBT5551 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
sot-23 Marking M1F Abstract: SMMBT5551 SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l Text: MMBT5550L, MMBT5551L, MMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements	Original	MMBT5550L, MMBT5551L, SMMBT5551L AEC-Q101 MMBT5550 MMBT5551, SMMBT5551 sot-23 Marking M1F SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l	PDF
MMBT5551L Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G ORDERING INFORMATION Normal MMBT5551-x-AE3-R	Original	MMBT5551 MMBT5551L MMBT5551G MMBT5551-x-AE3-R MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010 MMBT5551L	PDF
marking code g1 Abstract: G1 TRANSISTOR SOT 23 PNP Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3A (4 to< 8 kV) MECHANICAL DATA • Case: SOT-23 Plastic	Original	MMBT5551 MMBT5401) OT-23 2002/95/EC marking code g1 G1 TRANSISTOR SOT 23 PNP	PDF
Untitled Abstract: No abstract text available Text: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data	Original	MMBT5551 MMBT5401) OT-23 OT-23, MIL-STD-202, 100MHz DS30061	PDF
MMBT5551A Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V High current gain . 2 1 3 MARKING G1 SOT-23 Pb-free plating product number:MMBT5551L PIN CONFIGURATION	Original	MMBT5551 OT-23 MMBT5551L MMBT5551-AE3-R MMBT5551L-AE3-R OT-23 QW-R206-010 MMBT5551A	PDF
marking G1 sot23 UTC Abstract: No abstract text available Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V High current gain 2 1 APPLICATIONS Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR	Original	MMBT5551 OT-23 QW-R206-010, marking G1 sot23 UTC	PDF
1N914 Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage	Original	MMBT5550LT1 MMBT5551LT1 236AB) 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1	PDF
2N5551B Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU	PDF
MMBT5551R Abstract: sot23 HF mmbt5551 st Text: MMBT5551 NPN HIGH VOLTAGE TRANSISTOR POWER 160 Volts 250 mWatts FEATURES 0.006 0.15 MIN. VOLTAGE 0.120(3.04) 0.110(2.80) • NPN Silicon, planar design • Collector-emitter voltage V CE = 160V • Collector current I C = 300mA • Lead free in comply with EU RoHS 2002/95/EC directives.	Original	MMBT5551 300mA 2002/95/EC IEC61249 OT-23, MIL-STD-750, 2012-REV MMBT5551R sot23 HF mmbt5551 st	PDF
1N914 Abstract: MMBT5551 MMBT5551G1 Text: Zowie Technology Corporation High Voltage Transistor NPN Silicon COLLECTOR 3 3 MMBT5551 BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc Emitter-Base Voltage VEBO 6.0 Vdc	Original	MMBT5551 OT-23 1N914 MMBT5551 MMBT5551G1	PDF
marking G1 sot-23 Abstract: MMBT5401 MMBT5551 MARKING G1 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1	Original	OT-23 MMBT5551 OT-23 MMBT5401 100MHz MMBT5551 marking G1 sot-23 MMBT5401 MARKING G1	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components MMBT5551 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • NPN Plastic Encapsulate Transistor Halogen free available upon request by adding suffix "-HF"	Original	MMBT5551 150OC OT-23	PDF
Untitled Abstract: No abstract text available Text: MMBT5550L, MMBT5551L, MMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements	Original	MMBT5550L, MMBT5551L, SMMBT5551L MMBT5550 MMBT5551, SMMBT5551 MMBT5550LT1/D	PDF
Untitled Abstract: No abstract text available Text: High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc 3	Original	MMBT5550LT1 MMBT5551LT1 236AB)	PDF

1N914 Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 Text: ON Semiconductort MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage	Original	MMBT5550LT1 MMBT5551LT1 MMBT5551LT1 r14525 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551	PDF
Untitled Abstract: No abstract text available Text: MMBT5551 160V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • BVCEO > 160V Ideal for Low Power Amplification and Switching Complementary PNP Type Available MMBT5401 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)	Original	MMBT5551 MMBT5401) AEC-Q101 OT-23 J-STD-020 MILSTD-202, DS30061	PDF
marking G1 sot-23 Abstract: marking g1 Text: MCC TM Micro Commercial Components MMBT5551 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • NPN Plastic Encapsulate Transistor Collector Current: ICM=0.6A Collector-Base Voltage: V BR CBO=180V	Original	MMBT5551 150OC OT-23 marking G1 sot-23 marking g1	PDF
MMBT5551LT1 Abstract: No abstract text available Text: MMBT5551LT1 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Collector Emitter Voltage VCEO 160 V Collector Base Voltage VCBO 180 V Emitter Base Voltage	Original	MMBT5551LT1 OT-23 100MHz 15kHZ MMBT5551LT1	PDF
Untitled Abstract: No abstract text available Text: Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE ƽ We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH MMBT5551GH 1 1 BASE 2 2 SOT-23 EMITTER MAXIMUM RATINGS	Original	MMBT5550GH MMBT5551GH OT-23	PDF
2SC9830 Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)	Original	205AO 92var 220AB 220AB A220AB OT-89 O-92var OT-89 O-92var 2SC9830 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550	PDF
Untitled Abstract: No abstract text available Text: MMBT5551 SPICE MODEL: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A · · · · · · Min Max A	Original	MMBT5551 OT-23 MMBT5401) OT-23, J-STD-020A MIL-STD-202, DS30061	PDF
k4m sot 23 Abstract: MMBT5401 K4m transistor Text: SPICE MODEL: MMBT5401 MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT5551 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version	Original	MMBT5401 OT-23 MMBT5551) OT-23, J-STD-020A MIL-STD-202, MMBT5401-7 3000/Tape k4m sot 23 MMBT5401 K4m transistor	PDF
FMBM5551 Abstract: MMBT5551 Text: FMBM5551 NPN General Purpose Amplifier • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings * Value Units VCEO Symbol	Original	FMBM5551 MMBT5551 FMBM5551	PDF
Untitled Abstract: No abstract text available Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160	Original	MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D	PDF

MMBT5551 Search Results

MMBT5551 Price and Stock

AnBon Semi MMBT5551

Diotec Semiconductor AG MMBT5551

Suzhou Good-Ark Electronics Co Ltd MMBT5551

EVVO Semiconductor MMBT5551

SLKOR MMBT5551

MMBT5551 Datasheets (49)

MMBT5551 Datasheets Context Search

sot-23 Marking M1F

MMBT5551L

marking code g1

Untitled

MMBT5551A

marking G1 sot23 UTC

1N914

2N5551B

MMBT5551R

1N914

marking G1 sot-23

Untitled

Untitled

Untitled

1N914

Untitled

marking G1 sot-23

MMBT5551LT1

Untitled

2SC9830

Untitled

k4m sot 23

FMBM5551

Untitled