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    2N1711 Price and Stock

    Solid State Inc. 2N1711

    TRANS NPN 130V 1A TO39
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    DigiKey 2N1711 Box 4,188 10
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    Central Semiconductor Corp 2N1711 PBFREE

    TRANS NPN 50V 0.5A TO39
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    STMicroelectronics 2N1711

    TRANS NPN 50V 0.5A TO39
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    Microchip Technology Inc 2N1711

    TRANS NPN 50V 0.5A TO5
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    Microchip Technology Inc 2N1711S

    NPN TRANSISTOR
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    2N1711 Datasheets (160)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N1711 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 500MA TO-39 Original PDF
    2N1711 Freescale Semiconductor General Purpose Transistor - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N1711 Microsemi General Purpose Bipolar Transistor, NPN, TO-5, 3-Pin - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N1711 Philips Semiconductors NPN medium power transistor - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N1711 Philips Semiconductors Silicon Planar Transistor Original PDF
    2N1711 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Bipolar NPN Device - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N1711 STMicroelectronics TRANS GP BJT NPN 50V 0.5A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N1711 STMicroelectronics SWITCHES AND UNIVERSAL AMPLIFIERS - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N1711 Various Russian Datasheets Transistor Original PDF
    2N1711 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N1711 Boca Semiconductor General Purpose Bipolar Transistor, NPN, 50V, TO-39, 3-Pin - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Scan PDF
    2N1711 Boca Semiconductor General purpose transistor - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Scan PDF
    2N1711 Boca Semiconductor GENERAL PURPOSE TRANSISTOR NPN SILICON - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Scan PDF
    2N1711 Central Semiconductor NPN- METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N1711 Central Semiconductor NPN Metal Can Switching and General Purpose Transistors Scan PDF
    2N1711 Central Semiconductor General Purpose Bipolar Transistor, NPN, 50V, TO-39, 3-Pin - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=0.5 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Scan PDF
    2N1711 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N1711 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N1711 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N1711 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    ...

    2N1711 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2n1711

    Abstract: 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor


    Original     		PDF M3D111 2N1711 MAM317 SCA54 117047/00/02/pp8 transistor 2n1711 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips

    2N1711

    Abstract: No abstract text available
    Text: 2N1711 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N1711 O205AD) 1-Aug-02 2N1711

    transistor 2N1711

    Abstract: 2N1711 cdil 2N1711 2N1711 Data Sheet equivalent transistor 2N1711 RS510
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package N-P-N Double Diffused Transistor in a TO-39 Metal Package for a Wide Variety of Applications Such As d.c. and Wideband Amplifiers.


    Original     		PDF 2N1711 C-120 2N1711Rev250701 transistor 2N1711 2N1711 cdil 2N1711 2N1711 Data Sheet equivalent transistor 2N1711 RS510

    2N1711

    Abstract: 2N1890 equivalent transistor 2N1711 transistor 2N1711 2N171-1 MIL-PRF-19500/225
    Text: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices Qualified Level 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1 @ TC = +250C (2)


    Original     		PDF MIL-PRF-19500/225 2N1711 2N1890 2N1711, 2N1890, MIL-PRF-19500/225) 2N1711 2N1890 equivalent transistor 2N1711 transistor 2N1711 2N171-1 MIL-PRF-19500/225

    Untitled

    Abstract: No abstract text available
    Text: 2N1711 SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 39 The ASI 2N1711 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS IC 1.0 A VCBO 75 V PDISS 800 mW @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C


    Original     		PDF 2N1711 2N1711

    2N1711 MOTOROLA

    Abstract: 2N1711 transistor 2n1711 2N1711 M 2N1711D "2N1711"
    Text: MOTOROLA Order this document by 2N1711/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon 2N1711 COLLECTOR 3 2 BASE 1 EMITTER ARCHIVE INFORMATION Rating Symbol Value Unit Collector – Emitter Voltage VCER 50 Vdc Collector – Base Voltage


    Original     		PDF 2N1711/D 2N1711 2N1711/D* 2N1711 MOTOROLA 2N1711 transistor 2n1711 2N1711 M 2N1711D "2N1711"

    Untitled

    Abstract: No abstract text available
    Text: 2N1711 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE


    Original     		PDF 2N1711 2N1711 150mA, 150mA 500mA 20MHz 100kHz 23-April

    2N1711

    Abstract: No abstract text available
    Text: 2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.


    Original     		PDF 2N1711 2N1711

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package N-P-N Double Diffused Transistor in a TO-39 Metal Package for a Wide Variety of Applications Such As d.c. and Wideband Amplifiers.


    Original     		PDF 2N1711 C-120 2N1711Rev250701

    Untitled

    Abstract: No abstract text available
    Text: rm. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA DESCRIPTION 2N1613 2N1711 2N1893 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-6960 NPN Silicon Transistor JEDEC TO-39 case 2N1613, 2N1711, and 2N1893 are S i l i c o n NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications.


    Original     		PDF 2N1613 2N1711 2N1893 2N1613, 2N1711, 2N1893 2N17H Ic-500mA 300uA,

    2n1711

    Abstract: No abstract text available
    Text: 2N1711 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1711 Availability Online Store


    Original     		PDF 2N1711 2N1711 STV3208 LM3909N

    b0345

    Abstract: B0815 to-53 TO53 2SC840 KT934V Matsua 2SC840 2S0288
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N1711B 2SC1419 2SC1419 2Nl085 2S0330 2S0331 BSS1S NSOS179 ~~g~~~oo 25 30 SK32SS 2S011S0Y 92GU45A 2S0288 2S0289 KT9340 KT934V B0827-10 ~~~~~~7 35 40 SML5512 SML5902 SML5907 SML5912 ST440 ST450 2S013


    Original     		PDF B0373A 2NS705 92PE37A B0375-10 B037M O-12S b0345 B0815 to-53 TO53 2SC840 KT934V Matsua 2SC840 2S0288

    2n1711

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 225 Qualified Level Devices 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1


    Original     		PDF MIL-PRF-19500/ 2N1711 2N1890 2N1711, 2N1890, MIL-PRF-19500/225) 2n1711

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage, RBE < 10Ω Ω


    Original     		PDF 2N1711 C-120 2N1711Rev 040406E

    2N718

    Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
    Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for


    OCR Scan     		PDF 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, 2N150J. 2N1613. 2N718 SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613

    2N2389

    Abstract: 2N2390 2N1711 Texas Instruments TI424
    Text: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711


    OCR Scan     		PDF 2N2389, 2N2390 TI424 TI425 2N1613 2N1711 2N2389 2N1711 Texas Instruments

    2N310B

    Abstract: 2N2270
    Text: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*


    OCR Scan     		PDF 2N718A 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N310B 2N2270

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E D BSE • T~-2’7~0I bl3S3T31 D O l b n a S ■ Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE PKG . bvc eo - te . • ^ /- : *T r >c - i _-iiiln : 2N1613 2N1711 2N1893 2N2218 2N2219


    OCR Scan     		PDF bl3S3T31 2N1613 2N1711 2N1893 2N2218 2N2219 2N2219A 2N2221A 2N2222 2N2222A

    2N2243

    Abstract: 2n2405
    Text: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B


    OCR Scan     		PDF 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N2243 2n2405

    2N1711

    Abstract: 2N956 2N718A X10-4 2N1711N
    Text: 2N718A 2N956 M A X IM U M R ATINGS Rating Symbol 2N718A 2N956 2N1711 CASE 22-03, STYLE 1 TO-18 TO-206AA Unit C o lie ctor-E m itter V o ltage VCER 50 Vdc Collector-Base V o ltage v CBO 75 Vdc E m itter-Base Voltage Ve bo 7.0 3 , 3 C o lle c to r Vdc Total Device D issipation @ TA = 25°C


    OCR Scan     		PDF 2N718A 2N956 2N1711 2N956 O-206AA) 2N1711 X10-4 2N1711N

    BC337B

    Abstract: m 60 n 03 g10 BC327C
    Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA


    OCR Scan     		PDF ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 BC337B m 60 n 03 g10 BC327C

    2N2222 - to-92

    Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
    Text: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124


    OCR Scan     		PDF 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2222 - to-92 2N2222A TO-92 JC547 2n2222 to92 2N3904 TO-92 type JC500, Jc501

    2n1711s

    Abstract: 2N2218S 2N2904S 2N4406 2n4890s 2N4404 2N697S 2N1613S 2N2218AS 2N2219AS
    Text: TO-39 NPN METAL TRANSISTORS AM PLIFIER AND SWITCH Device Type 2N696S 2N697S 2N1613S 2N1711S 2N2218S 2N2218AS 2N2219S 2N2219AS Polarity v CEO V CER+ Vdc NPN NPN NPN NPN NPN NPN NPN NPN 40+ 40 + 50+ 50+ 30 40 30 40 lc max. (mA) 500 800 300 800 800 HpE min. @ IC


    OCR Scan     		PDF 2N696S 2N697S 2N1613S 2N1711S 2N2218S 2N2218AS 2N2219S 2N2219AS BFY50 BFY51 2N2904S 2N4406 2n4890s 2N4404

    transistor npn double

    Abstract: TO-39 CASE to ambient 2N1711 D73 transistor
    Text: N AUER PHILIPS/DISCRETE b^E T> • bbS3*131 GD2ÔD73 275 2N1711 SILICON PLANAR TRANSISTOR N-P-N double diffused transistor in a TO-39 metal envelope designed fora wide variety of applications such as d.c. and wideband amplifiers. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF 2N1711 7Z593220 bb53T31 002007b transistor npn double TO-39 CASE to ambient 2N1711 D73 transistor