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    Microchip Technology Inc 2N1717

    NPN TRANSISTOR
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    NPN TRANSISTOR
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    Microchip Technology Inc JAN2N1717

    TRANS NPN 100V 0.75A TO5
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    TRANS NPN 100V 0.75A TO39
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    Microchip Technology Inc JANTX2N1717

    TRANS NPN 100V 0.75A TO5
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    2N1717 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N1717 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N1717 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Bipolar NPN Device Original PDF
    2N1717 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N1717 API Electronics Short form transistor data Scan PDF
    2N1717 API Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N1717 API Electronics Short form transistor data Scan PDF
    2N1717 Central Semiconductor NPN- METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N1717 Central Semiconductor NPN Metal Can Switching and General Purpose Transistors Scan PDF
    2N1717 General Diode Transistor Selection Guide Scan PDF
    2N1717 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1717 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
    2N1717 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2N1717 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1717 Unknown Vintage Transistor Datasheets Scan PDF
    2N1717 Unknown Shortform Transistor Datasheet Guide Scan PDF
    2N1717 Unknown Shortform Electronic Component Datasheets Scan PDF
    2N1717 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1717 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1717 Unknown GE Transistor Specifications Scan PDF
    2N1717 Unknown Shortform Transistor PDF Datasheet Scan PDF

    2N1717 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1717

    Abstract: No abstract text available
    Text: 2N1717 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF 2N1717 O205AD) 17-Jul-02 2N1717

    Untitled

    Abstract: No abstract text available
    Text: 2N1717+JANTX Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)750m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)200m


    Original     		PDF 2N1717 Freq16M

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N1717

    Abstract: No abstract text available
    Text: 2N1717 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF 2N1717 O205AD) 1-Aug-02 2N1717

    DIODE 6AA

    Abstract: KT602BM sm 6aa KT602B 2N5073 2S0114 2SC1860 2SC499 BC117 kt503e
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 . 15 20 UPT215 KT503E 2N1717 KT630G SE7015 HSE178 KT602BM BC449 BC449 BC449 2N5175 2N3388 2So666A BC449A BC449A BC449A 2So667A 2N2941 2SC31 0 BCX29 ~g~~~ 25 30 35 40 45 50 55 60 2SC1860 2SC499 BSS38 2N5830 KT215B1


    Original     		PDF UPT215 KT503E 2N1717 KT630G SE7015 HSE178 KT602BM BC449 DIODE 6AA sm 6aa KT602B 2N5073 2S0114 2SC1860 2SC499 BC117

    2N1717

    Abstract: No abstract text available
    Text: 2N1717 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF 2N1717 O205AD) 19-Jun-02 2N1717

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original     		PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    2N1674

    Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


    Original     		PDF MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1674 Emihus 2N1605A BC447 2N1724 2N2891 2N1666 BSW39 2N1664

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


    OCR Scan     		PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    2N1716

    Abstract: 2N3584 NPN 2N3767 JANTX 2N3740 2N1716 JANTX TO-213
    Text: A POW ERHOUSE BIPOLAR T0-205 TO-5 Ä / AMPS < o m VOLTS hFE min/max o •c VCE (sat) max VOLTS 'C @ ! b A A 2N 1714" 60 0.75 20 min 0.2/5.0 2.0 0.2/0.02 2N 1715’ 100 0.75 20 min 0.2/5.0 2.0 0.2/0.02 2N1716 60 0.75 40 min 0.2/5.0 2.0 0.2/0.02 2N1717* 100


    OCR Scan     		PDF T0-205 O-213 2N1716 2N1717* 2N3584* 2N3585* 2N3766" 2N3767* 2N3738 2N3584 NPN 2N3767 JANTX 2N3740 2N1716 JANTX TO-213

    Untitled

    Abstract: No abstract text available
    Text: 1 1 1 ESSOELECTRONICS, INC. PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES ì 1 ] ] ] 1 1 11 1 1 1 fl 1 1 Device No 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719 2N1720 2N1721 2N1B89 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989


    OCR Scan     		PDF 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719

    2N1718

    Abstract: 2N1720 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717
    Text: Ü J iä ELECTRONICS, INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993


    OCR Scan     		PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720

    2n2019

    Abstract: 2n2018 2N545
    Text: Ic = t .0 AMPS bvceo PACKAGE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019 2N2150 2N2151 2N2987 2N2988 2N2989 2N2990 2N3262 2N3739 2N4000 2N4001


    OCR Scan     		PDF 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2n2019 2n2018

    2N3741A

    Abstract: 2N3767
    Text: BIPOLAR N P N PO W ER TR A N SIST O R S PEAK PACKAGE T O -205 TO-5 DEVICE VCE (sat) b v ceo «C hFE TYPE 2N 1714" VOLTS AMPS min/max 60 0.75 20 min 2N1715* 100 0.75 2N 17I6 2N1717* 60 0.75 100 0.75 T0213 *C @ VCE A V *C @ *B A A 0 .2 /5 .0 2.0 20 min 0 .2 /5 .0


    OCR Scan     		PDF 2N1715* 2N1717* T0213 2N3584* 2N3767* 2N3738 2N3879* 2N3741* 2N3741A 2N3741A 2N3767

    2N1252

    Abstract: 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719
    Text: Ú j ÍM E LE C T R O N IC S , INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992


    OCR Scan     		PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719

    393A

    Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
    Text: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440


    OCR Scan     		PDF 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 393A 2N3768 2N1716 207C 2N1722 180D 2N3868

    2N545

    Abstract: 2n1117 2N541 2N1052 2N1054 2N1055 2N1116 2N546 2N547 2N548
    Text: S Û UA RE » CO/ G E N E R A L ôs a s s ü a 3918590 GENERAL SEMICONDUCTOR — / DEVICE TYPE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019


    OCR Scan     		PDF 052550a 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N4300 2H4B63 2n1117 2N541 2N1054 2N1055 2N1116

    2N1720

    Abstract: 2n2784 2N5680 2N3058 T-20 2N4033
    Text: NPN HIGH CURRENT GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Maximum Ratings Type NPN PD Ambient mW 2N4237 2N5321 2KL714 2NL716 2N1718 2N1720 2N3418 2N3420 2N4238 2N5320 2N2987 2N2989 2N2991 2N2993 2N3419 2N3421 2N4239 2N4000 2N4300 2NL715 2N1717 2NL719 2ML721


    OCR Scan     		PDF 2n4237 2n5321 2nl714 2nl716 2n1718 2n1720 2n3418 2n3420 2n4238 2n5320 2n2784 2N5680 2N3058 T-20 2N4033

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339


    OCR Scan     		PDF O-39/TO-5 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420

    2N1714

    Abstract: 2N1716 2N1717 2N17H 2N1715
    Text: MlLr-S-195001263A t,L, 15 MAY 1963 SUPERSEDING M IL -S-19500/263 (E L ) <l< PfDUII AD «V r u u n v/ m vV ± 10At MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714 THROUGH 2N1717 1. SCOPE 1.1 Scope. This specification covers th e detail requirem ents fo r silicon, N PN , tran sis•


    OCR Scan     		PDF MIL-S-I9500/263A MIL-S-19500/263 2N1714 2N1717 2N1714. 2N1715. 2N1716. 2N1716 2N1717 2N17H 2N1715

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan     		PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    n4300

    Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
    Text: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.


    OCR Scan     		PDF TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 2N3418 n4300 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N3419