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    Rochester Electronics LLC 2N5551RLRPG

    TRANS NPN 160V 0.6A TO92
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    DigiKey 2N5551RLRPG Bulk 416,513 3,806
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    Rochester Electronics LLC 2N5551G

    TRANS NPN 160V 0.6A TO92
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    DigiKey 2N5551G Bulk 199,014 3,806
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    Rochester Electronics LLC 2N5551RL1G

    TRANS NPN 160V 0.6A TO92
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    DigiKey 2N5551RL1G Bulk 103,387 3,806
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    onsemi 2N5551TF

    TRANS NPN 160V 0.6A TO-92-3
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    DigiKey 2N5551TF Cut Tape 44,981 1
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    Rochester Electronics LLC 2N5551ZL1G

    TRANS NPN 160V 0.6A TO92
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    DigiKey 2N5551ZL1G Bulk 31,679 3,806
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    2N5551 Datasheets (119)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    2N5551 AUK NPN Silicon Transistor (General purpose amplifier High voltage application) Original PDF
    2N5551 Avic Electronics NPN General Purpose Amplifier Original PDF
    2N5551 Boca Semiconductor NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR Original PDF
    2N5551 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original PDF
    2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    2N5551 Kexin NPN Transistors Original PDF
    2N5551 Korea Electronics TRANS GP BJT NPN 160V 0.6A 3TO-92 Original PDF
    2N5551 Micro Commercial Components TRANS GP BJT NPN 160V 0.6A 3TO-92 Original PDF
    2N5551 On Semiconductor mplifier Transistors(NPN Silicon) Original PDF
    2N5551 On Semiconductor Amplifier Transistors NPN Original PDF
    2N5551 Philips Semiconductors NPN High-Voltage Transistor Original PDF
    2N5551 Philips Semiconductors Small-signal Transistors Original PDF
    2N5551 ROHM General Purpose Bipolar Transistor, NPN, 160V, TO-92, 3-Pin Original PDF
    2N5551 Siemens Cross Reference Guide 1998 Original PDF
    2N5551 Sinyork Mini size of Discrete semiconductor elements Original PDF
    2N5551 Taitron Components Small Signal High Voltage Transistor (NPN) Original PDF
    2N5551 TY Semiconductor NPN Transistors - TO-92 Original PDF

    2N5551 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    2N5551

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage


    OCR Scan     		2N5551 100MHz 2N5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor IC Transistors DIP SMDType Type SMD Type Product specification 2N5551 Features Switching and amplification in high voltage Applications such as telephony Low current max. 600mA High voltage(max.180V) Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		2N5551 600mA) 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION


    Original     		2N5551 2N5551L-x-AB3-R 2N5551G-x-AB3-R OT-89 2N5551L-x-T92-B 2N5551G-x-T92-B 2N5551L-x-T92-K 2N5551G-x-T92-K 2N5551L-x-T92-A-B 2N5551G-x-T92-A-B PDF

    2N5551 circuit

    Abstract: 2N5550 2N5551 2N555 1N914
    Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage


    Original     		2N5550 2N5551* 2N5551 226AA) r14525 2N5550/D 2N5551 circuit 2N5550 2N5551 2N555 1N914 PDF

    2N5551B

    Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU PDF

    Untitled

    Abstract: No abstract text available
    Text: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50


    OCR Scan     		Transistors/TO-92 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 PDF

    transistor 2n5551

    Abstract: 2N5551
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE Boca Semiconductor Corp. BSC High Voltage NPN Transistor For General Purpose And Telephony Applications.


    Original     		2N5551 25deg transistor 2n5551 2N5551 PDF

    transistor 2N5401

    Abstract: 2N5401 2N5551 CMLT5554
    Text: CMLT5554 SURFACE MOUNT DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process


    Original     		CMLT5554 2N5551 2N5401 OT-563 100MHz 20-January transistor 2N5401 CMLT5554 PDF

    2N5551

    Abstract: No abstract text available
    Text: 2N5551 NPN Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Total Device Dissipation TA=25 C PD


    Original     		2N5551 270TYP 2N5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5551 TO- 92 CBE BC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified


    Original     		2N5551 25deg C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5551 Features • NPN General Purpose Amplifier Transistor This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.


    Original     		2N5551 100uAdc, 10uAdc, 35Vdc 120Vdc, 300us, 10Vdc, 10mAdc) PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5551 Features • • • NPN General Purpose Amplifier Transistor This device is designed for general purpose high voltage amplifiers


    Original     		2N5551 100uAdc, PDF

    2N5551

    Abstract: No abstract text available
    Text: 2N5551 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.6 A Collector-base voltage V (BR)CBO :180 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		2N5551 30MHz 100mA 2N5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		2N5551 100uA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5551 NPN Plastic-Encapsulate Transistors 2 TO-92 Features •Switching and amplification in high voltage Applications such as telephony · Low current max. 600mA · High voltage(max.180v) 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		2N5551 600mA) 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5551 NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Total Device Dissipation TA=25 C


    Original     		2N5551 270TYP PDF

    2N5401

    Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
    Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2N5400 2N5401 2N5550 2N5551 2N5400 2N5401 transistor 2N5401 st2n5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan     		2N5400 2N5550 2N5551 O-92A 2N5400, 2N5401 2N5550, PDF

    2N5551C

    Abstract: SAT12
    Text: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage. : VCbo=180V, VCeo=160V • Low Leakage Current. : I CB O = 5 0 n A Max. V Cb=120V


    OCR Scan     		2N5551C 100MHz 250//A 2N5551C SAT12 PDF

    2N5551L

    Abstract: 2N5551L-x-AB3-R 2N5551 circuit 2N5551 2N5551 transistor 2N5551-NPN Transistor TO-92 2N5551 2N5551 TO92 high voltage npn transistor SOT-89 2N5551 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS 1 * Telephone switching circuit TO-92 * Amplifier *Pb-free plating product number: 2N5551L


    Original     		2N5551 OT-89 2N5551L 2N5551-x-AB3-R 2N5551L-x-AB3-R 2N5551-x-T92-B 2N5551L-x-T92-B 2N5551-x-T92-K 2N5551L-x-T92-K 2N5551L 2N5551L-x-AB3-R 2N5551 circuit 2N5551 2N5551 transistor 2N5551-NPN Transistor TO-92 2N5551 2N5551 TO92 high voltage npn transistor SOT-89 2N5551 UTC PDF

    2N5401

    Abstract: No abstract text available
    Text: 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2N5400 2N5401 2N5550 2N5551 2N5400 2N5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5551 Features • • • • NPN General Purpose Amplifier Transistor This device is designed for general purpose high voltage amplifiers


    Original     		2N5551 PDF

    2N5551 SOT23

    Abstract: 2N5551 2N5551CSM
    Text: 2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 • HERMETIC CERAMIC SURFACE MOUNT


    Original     		2N5551CSM 2N5551 2N5551 SOT23 2N5551 2N5551CSM PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES 1999. 11. 30 Revision No : 2 1/2


    Original     		2N5551S PDF