2N2906E Search Results
2N2906E Datasheets (2)
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ECAD Model |
Manufacturer |
Description |
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Datasheet Type |
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2N2906E | Korea Electronics | Switching Transistor | Original | |||
2N2906E | Korea Electronics | Switching Transistor | Original |
2N2906E Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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1N916
Abstract: 2N2906E
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Original |
2N2906E -50nA -50mA, 1N916 2N2906E | |
Contextual Info: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA Max. , IBL=-50nA(Max.) 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V. |
Original |
2N2906E -50nA -50mA, | |
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
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Original |
2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor | |
Contextual Info: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A 1 6 2 5 3 4 A1 Low Leakage Current C FEATURES : ICEX=-50nA Max. , IBL=-50nA(Max.) D @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. |
Original |
2N2906E -50nA -50mA, | |
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
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Original |
2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P | |
f-10HzContextual Info: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 ・Low Leakage Current C FEATURES : ICEX=-50nA Max. , IBL=-50nA(Max.) D @VCE=-30V, VEB=-3V. |
Original |
2N2906E -50nA -50mA, 100mA f-10Hz | |
1N916
Abstract: 2N2906E
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Original |
2N2906E -50nA -50mA, 1N916 2N2906E | |
2N2906EContextual Info: SEMICONDUCTOR 2N2906E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking ZA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZA 2N2906E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index. |
Original |
2N2906E 2N2906E | |
2N2906UContextual Info: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage |
Original |
2N2906U -50nA -50mA, x10-4 -10mA, -10mA -50mA -100mA 2N2906U | |
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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Original |
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Contextual Info: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=-50nA Max. , IBL=-50nA(Max.) A1 C Low Leakage Current @VCE=-30V, VEB=-3V. D Excellent DC Current Gain Linearity. |
Original |
2N2906U -50nA -50mA, | |
1N916
Abstract: 2N2906E 2N2906U
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Original |
2N2906U -50nA -50mA, 1N916 2N2906E 2N2906U | |
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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Original |
KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j |