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    2N1132 Search Results

    2N1132 Datasheets (116)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N1132 Microsemi BJT, PNP, Low Power Transistor, VCB0 50V, IC 0.6A - Pol=PNP / Pkg=TO39 / Vceo=50 / Ic=0.6 / Hfe=30-90 / fT(Hz)=50M / Pwr(W)=0.6 Original PDF
    2N1132 Microsemi LOW POWER PNP SILICON TRANSISTOR - Pol=PNP / Pkg=TO39 / Vceo=50 / Ic=0.6 / Hfe=30-90 / fT(Hz)=50M / Pwr(W)=0.6 Original PDF
    2N1132 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package Bipolar PNP Device - Pol=PNP / Pkg=TO39 / Vceo=50 / Ic=0.6 / Hfe=30-90 / fT(Hz)=50M / Pwr(W)=0.6 Original PDF
    2N1132 Central Semiconductor METAL CAN Transistors Scan PDF
    2N1132 Central Semiconductor Metal Can Transistors Scan PDF
    2N1132 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N1132 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N1132 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N1132 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N1132 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
    2N1132 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N1132 General Diode Transistor Selection Guide Scan PDF
    2N1132 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N1132 Micro Electronics Semiconductor Devices Scan PDF
    2N1132 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1132 Motorola Power Transistor Selection Guide Scan PDF
    2N1132 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
    2N1132 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
    2N1132 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2N1132 Unknown Semiconductor Master Cross Reference Guide Scan PDF
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    2N1132 Price and Stock

    SICK AG WTE11-2N1132

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    DigiKey WTE11-2N1132 Bulk 1
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    TME WTE11-2N1132 1
    • 1 $125.01
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    Susumu Co Ltd RG2012N-1132-B-T5

    RES SMD 11.3K OHM 0.1% 1/8W 0805
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    Susumu Co Ltd RG2012N-1132-W-T5

    RES SMD 11.3KOHM 0.05% 1/8W 0805
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    Susumu Co Ltd RG2012N-1132-D-T5

    RES SMD 11.3K OHM 0.5% 1/8W 0805
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    Susumu Co Ltd RG2012N-1132-C-T5

    RES SMD 11.3KOHM 0.25% 1/8W 0805
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    2N1132 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3810 LCC

    Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
    Text: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *


    Original     		PDF O-116 2N3810 LCC 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB

    transistor 8069

    Abstract: 2N1132 LE17
    Text: SILICON PLANAR PNP TRANSISTOR 2N1132 • High Speed Switching • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF 2N1132 -600mA 600mW O-205AD) transistor 8069 2N1132 LE17

    transistor 102

    Abstract: 2N1132CSM TF80F doc7518
    Text: 2N1132CSM MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 1.02 ± 0.10 (0.04 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON PNP TRANSISTOR. • HIGH SPEED SWITCHING


    Original     		PDF 2N1132CSM 150mA transistor 102 2N1132CSM TF80F doc7518

    Untitled

    Abstract: No abstract text available
    Text: 2N1132B Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)70 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)150m


    Original     		PDF 2N1132B

    2N1132

    Abstract: No abstract text available
    Text: 2N1132 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N1132 O205AD) 1-Aug-02 2N1132

    2N1132

    Abstract: 2N1131 2N1131L 2N1132L
    Text: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


    Original     		PDF MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131, 2N1311L, 2N1312L 2N1132 2N1131 2N1131L 2N1132L

    MIL-S-19500

    Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
    Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S


    Original     		PDF 2N497 2N498 2N656 2N657 2N696 2N697 2N1131 2N1132 2N718A 2N1613 MIL-S-19500 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN

    2N2222A LCC1

    Abstract: 2N2222 LCC3 transistor 2n2222 TO-90 2N2222A2 2N2222ACECC npn 2n2222 transistor 2N2222ACSM4 2N2222ADCSM "PNP Transistor" 2n2222 of 2N2222A
    Text: Search Results Part number search for devices beginning "2N1132" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N1132 PNP TO39 50V 0.6A 30 90 10/0.15 50MHz


    Original     		PDF 2N1132" 2N1132 2N1132CSM 2N1132CSM-JQR-B 2N1132DCSM 2N1132-JQR-B 50MHz 2N2222A LCC1 2N2222 LCC3 transistor 2n2222 TO-90 2N2222A2 2N2222ACECC npn 2n2222 transistor 2N2222ACSM4 2N2222ADCSM "PNP Transistor" 2n2222 of 2N2222A

    2N1132

    Abstract: No abstract text available
    Text: 2N1132 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1132 Availability Online Store


    Original     		PDF 2N1132 2N1132 STV3208 LM3909N

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N1132

    Abstract: 2N1131 2N1311 2N1131L 2N1132L ic4050 2n1312 low power pnp
    Text: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


    Original     		PDF MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131, 2N1311L, 2N1312L 2N1132 2N1131 2N1311 2N1131L 2N1132L ic4050 2n1312 low power pnp

    Untitled

    Abstract: No abstract text available
    Text: 2N1132A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)150m


    Original     		PDF 2N1132A

    Untitled

    Abstract: No abstract text available
    Text: 2N1132 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)150m


    Original     		PDF 2N1132

    Untitled

    Abstract: No abstract text available
    Text: 2N1132L+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1132L Freq60M

    2N1132CSM

    Abstract: No abstract text available
    Text: 2N1132CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF 2N1132CSM 2-Aug-02 2N1132CSM

    2N1132

    Abstract: 2N1131 1132 2n 1131 H12B 1131
    Text: 2N1131 2N1132 PNP SILICON TRANSISTORS, PLANAR T R A N S IS T O R S PNP S IL IC IU M , P L A N A R - General use Usage général - Small signal LF amplification -3 5 V v CEO A m p lific a tio n B F p e tits signaux h jiE 150 mA| Case TO-39 B o îtie r ABSOLUTE RATINGS (LIM ITIN G VALUES


    OCR Scan     		PDF 2IM1131 2N1132 2N1132 2N1131 1132 2n 1131 H12B 1131

    MMBT3905

    Abstract: MMBT2904 2N2906 to-92 2N1132A LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905
    Text: NATL SEMICOND DISCRETE SEE 3> • b501130 0037777 2 ■ T^27~0J PNP General Purpose Transistors by Ascending Vceo (continued) V Ceo(V) V cbo(V) Min Min BCF29 BCF30 BCW 61A 32 32 32 2N1132A 2N2904 2N2905 2N2906 2N2907 2N3905 2N3906 2N4037 2N4402 2N4403 2N5365


    OCR Scan     		PDF S01130 BCF29 O-236 BCF30 BCW61A 2N1132A 2N2904 2N2905 MMBT3905 MMBT2904 2N2906 to-92 LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905

    2N1132A

    Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3495 2n1132a transistor 2N3494 2N4033 2N3467

    2n2222a SOT23

    Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
    Text: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1


    OCR Scan     		PDF T-33-Ã 2N1132 2N1483/ 2N1484^ 2N1485 2N1486 2N1613 2N1711 2N2060 2N2192 2n2222a SOT23 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1483 2N1484

    BCY78

    Abstract: BC107 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59
    Text: N P N LOW LEV EL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177

    2N4033

    Abstract: 2N3494 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494

    TI429

    Abstract: TI428
    Text: TYPES 2N2393, 2N2394 P-N-P SILICON TRANSISTORS B U L L E T I N NO. D L - S 6 46063, O C T O B E R 1964 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS Formerly TI428 and TI429 • Electrically Similar to 2N1131 and 2N1132 • Compatible Package For Interfacing With Integrated Circuits and


    OCR Scan     		PDF 2N2393, 2N2394 TI428 TI429 2N1131 2N1132 PR00UCT TI429

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) VCE(sat) max VCE (V) (V) (A) fT min (MHz) Cob COMPLE­ max MENTARY TYPE (PF) 2N720A 2N721 2N91I 2N956 2N1132 N P N N P TO-18 TO-18 TO-18


    OCR Scan     		PDF 2N720A 2N721 2N91I 2N956 2N1132 2N1420 2N1507 2N1566 2N1613 2N1613A

    2N2210

    Abstract: 2N2223 200H 250M T018 T072 2N1724A 706A
    Text: MfiE D m fll331fi7 □□□□433 31T • SMLB SEMELABtSEMELAB BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N 696 2N 697 2N 706 2N 706A 2N 718A 2N 720A 2N 722 2N 869 2N 869A 2N 914 2N 915 2N 916 2N 918 2N 930 2N 930A 2N1132 2N1483A 2N1484A


    OCR Scan     		PDF D00aM33 40min 75min 20min l/10m 25min 5/10m 2N2210 2N2223 200H 250M T018 T072 2N1724A 706A