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    Bipolar Junction Transistor, NPN Type, TO-210AC
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    2N1617 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N1617 Semelab NPN SILICON TRANSISTOR - Pol=NPN / Pkg=TO61 / Vceo=70 / Ic=5 / Hfe=15-75 / fT(Hz)=3M / Pwr(W)=85 Original PDF
    2N1617 General Diode Transistor Selection Guide Scan PDF
    2N1617 General Semiconductor Low Frequency Transistors Scan PDF
    2N1617 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1617 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2N1617 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1617 Unknown Shortform Transistor Datasheet Guide Scan PDF
    2N1617 Unknown Vintage Transistor Datasheets Scan PDF
    2N1617 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1617 Unknown Shortform Transistor PDF Datasheet Scan PDF
    2N1617 Unknown GE Transistor Specifications Scan PDF
    2N1617 Unknown Transistor Replacements Scan PDF
    2N1617 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
    2N1617 Pirgo Electronics Power Transistors in TO-57 / TO-61 Scan PDF
    2N1617 Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF
    2N1617 Semelab Low Frequency Silicon Power NPN Transistor Scan PDF
    2N1617 Semico NPN Silicon Power Transistor Selection Guide Scan PDF
    2N1617 Semitronics Silicon Power Transistors Scan PDF
    2N1617 SGS-Thomson Transistor Datasheet Scan PDF
    2N1617 Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF

    2N1617 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1617

    Abstract: No abstract text available
    Text: 2N1617 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR  1 0 .1 6 (0 .4 0 0 ) 1 7 .2 7 (0 .6 8 0 ) 1 9 .0 5 (0 .7 5 0 ) m in . ! • Bipolar Power Transistor 1 5 .4 2 (0 .6 0 7 ) m a x . • TO–61 Hermetic Package 7 .6 2 (0 .3 0 0 ) 8 .8 9


    Original     		PDF 2N1617 300mA 2N1617

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 378-8960 MECHANICAL DATA Dimensions in mm (inches) 2N1617 19.05 (0.750) mln. NPN SILICON TRANSISTOR to O i 31 si! Bipolar Power Transistor 15.42 (0.607) max.


    Original     		PDF 2N1617 100mA 250mA 300mA

    2N1208 - 2N1212

    Abstract: No abstract text available
    Text: <£s.m.i-Cond.u.ctoi ^Pr 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N1618 2N1208 - 2N1212 2N1724 2N1616/A - 2N1617/A 2N2101 POWER TRANSISTORS Sat Test Voltages Conditions PT TYPE @ NO. 25aC


    Original     		PDF 2N1618 2N1208 2N1212 2N1724 2N1616/A 2N1617/A 2N2101 2N1208 2N1209 2N1208 - 2N1212

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N1674

    Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


    Original     		PDF MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1674 Emihus 2N1605A BC447 2N1724 2N2891 2N1666 BSW39 2N1664

    b0951

    Abstract: 2SC647 BLX19 BLX16 25G60 2n5979 2N4310 ST+T8+1060
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 • 50 60 65 70 75 · · 80 ·85 90 · 95 912 Ie Max (A) V(BA)CEO (V) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max PD Max TOper Max (a) (a) (W) (OC) Package Style >= 5 A, (Co nt' d)


    Original     		PDF

    2N2856

    Abstract: a/TO111
    Text: A P I ELECTRONICS INC ' 00 43 59 2 A P I E L E C T R O N I C S ' INC 5b Ï Ë J 00435^5 0D0DE51 fl 26C 00221 ~T ~33~Dt COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No 2N1616 2N1617 2N1618 2N1702 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3


    OCR Scan     		PDF 0D0DE51 2N1616 2N1617 2N1618 2N1702 2N2150 2N2151 2N2657 2N2658 2N2849 2N2856 a/TO111

    STA9750

    Abstract: 2N1616 2N1616A 2N1617 2N1617A 2N1618 2N1618A STA8650 STA9650
    Text: Silicon power transistors NPN TO-61 @ Ic/VcE Type# 2N1616 2N1616A 2N1617 2N1617A 2N1618 2N1618A Typical Values STA8650 STA86S1 STA8652 VcEOISUS] Volts 60 60 70 70 80 80 80 60 100 140 (Min-Max ls/b VcE(SAT) @ I c/ I b @ A/V) 15-75@2/12 20-60 @ 2/4 15-75@2/12


    OCR Scan     		PDF 2N1616 2N1616A 2N1617 2N1617A 2N1618 2N1618A STA9750 STA9751 STA9752 STA8650 STA9650

    2N2632

    Abstract: No abstract text available
    Text: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60


    OCR Scan     		PDF 2N1208 2N1212 2N1616 2N1617 2N1618 2N1702 2N1724 2N1724A 2N1725 2N2632

    Untitled

    Abstract: No abstract text available
    Text: 8134693 SEMICOA MO DÉ 5 1 3 ^ 3 QDDOIEb 3 -Q\ NPN SILICON POWER TRANSISTORS Cont’d) Maximum Ratings Device Dissipation Type No. @ 25°C NPN (Case) Watts 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337 2N1617 2N4897 2N4150 2N5152


    OCR Scan     		PDF 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR 3918590 GENERAL « S EMI CON DU CT OR DE 1 3^105^0 □□□5GT5 fl 95D . 02092 D le = 5.0 AMPS - r • W 'CPi BVceo/ DEVICE TYPE PACKAGE 2N1208 2N1209 2N1212 2N1616 2N1617 TO -61 TO -61 TO -61 TO -61 TO -61 2N1618 2N1724 2N1724A 2N1725


    OCR Scan     		PDF 2N1208 2N1209 2N1212 2N1616 2N1617 2N1618 2N1724 2N1724A 2N1725 2N2632

    2n1620

    Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E


    OCR Scan     		PDF

    2N4116

    Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
    Text: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850


    OCR Scan     		PDF fll34fc, 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N4116 2N5304 2N2658

    2N1047

    Abstract: SOLID POWER CORP 2n1768 2N104 2N176 2N1050A 2n1769 2N1047B 2N1048 2N1048B
    Text: 8 3 6 5 7 0 0 S O L I D PO WE R C O R P 95C 0 0 1 1 6 SOLID POWER CORP T5 D "T"^3 Û f DE | fl3bS7DD DDDDllb 2 P O W E R T R A N S IS T O R S PT 2N1047 TO-57 40 aS hFE MAXIM UM RATINGS @ Ic 25°C BVcbo BV ceo BV ebo V V V A Watts TYPE NO. Ic A MIN MAX V CE


    OCR Scan     		PDF 2N1047 2N1048 2N1049 2N1050 2N1047A 2N1048A f2N1049A t2N1050A 2N1047B 2N1048B 2N1047 SOLID POWER CORP 2n1768 2N104 2N176 2N1050A 2n1769 2N1047B 2N1048 2N1048B

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan     		PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


    OCR Scan     		PDF 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110

    2SD45

    Abstract: SOT1156 2sc768 2N1210-1 2N1619 2N1620 SDT1152 MHT6311 MHT6312 MHT6313
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


    OCR Scan     		PDF NPN110. SDT1156 SDT1157 400mS SDT1158 SDT1159 400ml SDT1160 SDT1161 2SD45 SOT1156 2sc768 2N1210-1 2N1619 2N1620 SDT1152 MHT6311 MHT6312 MHT6313

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan     		PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2N1050A

    Abstract: transistor 2n1208 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049B
    Text: A P I ELECTRONI CS INC blE D • GDMaS'iS □□□02'iM bfl? ■ AfIC POWER TRANSISTORS TYPE NO. TO-57 PT @ 25°C Watts MAXIMUM RATINGS B V c b o B V ceo B V ebo Ic V V V A T-33-l Sat Voltages hFE MIN MAX Ic A V CE V VCE V be v V Test Conditions IB Ic I ebo


    OCR Scan     		PDF 00QG2S4 2N1047 2N1048 2N1049 2N1050 2N1047A 2N1048A f2N1049A 2N1050A 2N1047B transistor 2n1208 2N1048B 2N1049B

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: «gl —I * i ; l e c t r i ì r u c s ini. POWER TRANSISTORS PT TYPE NO SECTION 3 TO-57 @ 25°C Watts M AXIM UM RATINGS B V c b o B V c eo B V ebo le V V A V hFE Sat Voltages Cà> le A MIN MAX VCE V V ce be V V V Test Conditions Ib le A A I eb o ma 2N1047


    OCR Scan     		PDF 2N1047 2N1048 2N1049 2N1209 2N1212 2N1616 2N1617 2N1618 2N2101

    2N2210

    Abstract: 2N2223 200H 250M T018 T072 2N1724A 706A
    Text: MfiE D m fll331fi7 □□□□433 31T • SMLB SEMELABtSEMELAB BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N 696 2N 697 2N 706 2N 706A 2N 718A 2N 720A 2N 722 2N 869 2N 869A 2N 914 2N 915 2N 916 2N 918 2N 930 2N 930A 2N1132 2N1483A 2N1484A


    OCR Scan     		PDF D00aM33 40min 75min 20min l/10m 25min 5/10m 2N2210 2N2223 200H 250M T018 T072 2N1724A 706A