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    2SB1641 Search Results

    2SB1641 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB1641 Toshiba TRANS DARLINGTON PNP 100V 5A 3(2-10T1A) Original PDF
    2SB1641 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1641 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1641 Toshiba PNP transistor Scan PDF
    2SB1641 Toshiba TRANSISTOR SILICON PNP RIPLE DIFFUSED TYPE Scan PDF

    2SB1641 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1641

    Abstract: 2SD2526 B1641
    Text: 2SB1641 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1641 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)


    Original     		PDF 2SB1641 2SD2526 2SB1641 2SD2526 B1641

    Untitled

    Abstract: No abstract text available
    Text: 2SB1641 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1641 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)


    Original     		PDF 2SB1641 2SD2526

    B1641

    Abstract: No abstract text available
    Text: 2SB1641 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1641 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)


    Original     		PDF 2SB1641 2SD2526 2-10T1A B1641

    2SB1641

    Abstract: 2SD2526 D2526 transistor equivalent type
    Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD2526 2SB1641 2SB1641 2SD2526 D2526 transistor equivalent type

    Untitled

    Abstract: No abstract text available
    Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD2526 2SB1641 2-10T1A

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2SB1641

    Abstract: 2SD2526 D2526
    Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD2526 2SB1641 2SB1641 2SD2526 D2526

    2SB1641

    Abstract: 2SD2526 D2526
    Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD2526 2SB1641 2SB1641 2SD2526 D2526

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		PDF 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220

    Untitled

    Abstract: No abstract text available
    Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD2526 2SB1641 2-10T1A

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    B1641

    Abstract: 2SB1641 2SD2526
    Text: TO SH IBA 2SB1641 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 641 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hEE = 1500 Min. (VCE= -3 V , IC= -2 .5 A ) Low Saturation Voltage


    OCR Scan     		PDF 2SB1641 2SD2526 B1641 2SB1641 2SD2526

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB1641 H IGH POW ER SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. • H ig h DC C u rre n t G ain : h FE = 1500 (M in.) (V c • e = - 3 V , Iq = - 2 .5 A ) Low S a tu ra tio n V oltage


    OCR Scan     		PDF 2SB1641 --100V, --30m --20m 20//S --25V

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1641 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 641 HIGH POWER SW ITCHING APPLICATIONS U nit in mm H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS • High DC Current Gain : hjrE = 1500 Min. (VC E = - 3 V , I c = - 2 .5 A )


    OCR Scan     		PDF 2SB1641 2SD2526

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SB1641

    Abstract: 2SD2526
    Text: TO SH IBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ic = 3A) Low Saturation Voltage :


    OCR Scan     		PDF 2SD2526 2SB1641 2SB1641 2SD2526

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.2 • • • i 61.2 High DC Current Gain : hFE = 2000 Min. (Vce = 3V, Ic = 3A)


    OCR Scan     		PDF 2SD2526 2SB1641

    2SB1641

    Abstract: 2SD2526
    Text: TOSHIBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ie = 3A) Low Saturation Voltage :


    OCR Scan     		PDF 2SD2526 2SB1641 2SB1641 2SD2526

    2SB1641

    Abstract: 2SD2526
    Text: TO SH IBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ic = 3A) Low Saturation Voltage :


    OCR Scan     		PDF 2SD2526 2SB1641 2SB1641 2SD2526

    NPN 1147

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 U nit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. H A M M E R D RIV E , PULSE M O T O R D R IV E A P P L IC A T IO N S. • • • High DC Current Gain : hpE = 2000 Min. (V c e = 3 V , I = 3A) Low Saturation Voltage : V q e (sat) = 1-5V (Max.) (Ic = 3A)


    OCR Scan     		PDF 2SD2526 2SB1641 NPN 1147

    2SD2526

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S D2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.2 i -¿>1.2 High DC Current Gain : hFE = 2000 Min. (VÇE = 3V, Iç = 3A) Low Saturation Voltage : Vçjg (sat)= Í-5V (Max.) (Iq = 3A)


    OCR Scan     		PDF 2SD2526 D2526 2SB1641 --55-COLLECTOR 2SD2526