FPD750SOT89
Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD750SOT89
25dBm
39dBm
FPD750SOT89
25mx1500m
FPD750SOT89E:
FPD750SOT89CE-BC
FPD750SOT89CE-BE
FPD750SOT89CE-BG
BC 148 TRANSISTOR DATASHEET
SSG 23 TRANSISTOR
TRANSISTOR BC 135
FPD750SOT89E
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0603 footprint IPC
Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD3000SOT89
FPD3000SOT8
30dBm
45dBm
FPD3000SOT89
25mx1500m
FPD3000SOT89E:
FPD3000SOT89CE-BD
FPD3000SOT89CE-BE
FPD3000SOT89CE-BG
0603 footprint IPC
FPD3000
TRANSISTOR BC 157
FPD3000SOT89E
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FPD1500
Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a
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FPD1500DFN
FPD1500DFN
mx750
27dBm
85GHz
42dBm
85GHz)
EB1500DFN-BA
FPD1500
SSG 23 TRANSISTOR
stu 407
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 135
TRANSISTOR BC 157
FPD750SOT89
InGaAs hemt biasing
EB1500DFN-BE
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FPD6836P70
Abstract: FPD6836 Filtronic* FPD6836 fpd6836p
Text: PRELIMINARY • FPD6836P70 HI-FREQUENCY PACKAGED PHEMT PERFORMANCE ♦ 22 dBm Output Power P1dB ♦ 19 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.5 dB Noise Figure at 1.85 GHz ♦ 32 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.85 GHz ♦ Useable Gain to 20 GHz
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FPD6836P70
FPD6836P70
FPD6836
Filtronic* FPD6836
fpd6836p
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noise parameter FPD750 0.5w power phemt
Abstract: FPD750 MIL-HDBK-263 P100
Text: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE
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FPD750
FPD750
noise parameter FPD750 0.5w power phemt
MIL-HDBK-263
P100
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FPD2250
Abstract: FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 Filtronic Components
Text: FPD2250SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 29 dBm Output Power (P1dB) ♦ 14 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD2250SOT89E
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FPD2250SOT89
FPD2250SOT89E
FPD2250SOT89
FPD2250
FPD2250SOT89E
MIL-HDBK-263
Filtronic Components
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FPD200
Abstract: MIL-HDBK-263 400x400
Text: FPD200 GENERAL PURPOSE PHEMT • • DRAIN BOND PAD 1X FEATURES ♦ 19 dBm Linear Output Power at 12 GHz ♦ 12 dB Power Gain at 12 GHz ♦ 17 dB Maximum Stable Gain at 12 GHz ♦ 12 dB Maximum Stable Gain at 18 GHz ♦ 45% Power-Added Efficiency SOURCE
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FPD200
FPD200is
FPD200
MIL-HDBK-263
400x400
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Untitled
Abstract: No abstract text available
Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing
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FPD750
FPD7500
FPD750
mx750Î
OT343,
12GHz
12GHzlable
FPD750-000
FPD750-000SQ
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Untitled
Abstract: No abstract text available
Text: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE
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FPD750
FPD750
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FPD1500SOT89
Abstract: No abstract text available
Text: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1500SOT89
FPD1500SOT89
FPD1500
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Untitled
Abstract: No abstract text available
Text: FPD750 Datasheet v2.4 0.5W POWER PHEMT FEATURES: • • • • • LAYOUT: 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency GENERAL DESCRIPTION: The FPD750
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FPD750
FPD750
OT343
22A114.
MIL-STD-1686
MIL-HDBK-263.
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FPD200P70
Abstract: transistor marking code 1325 RO29 "IPC 1752" gold L130
Text: FPD200P70 Data sheet v4.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:
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FPD200P70
26GHz
FPD200P70
J-STD-020C,
transistor marking code 1325
RO29
"IPC 1752" gold
L130
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FPD1500SOT89
Abstract: TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF FPD1500SOT89E filtronic Solid State 33id
Text: FPD1500SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant
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FPD1500SOT89
1850MHZ)
FPD1500SOT89E
FPD1500SOT89
22-A114.
EB1500SOT89
J-STD-020C,
TRANSISTOR BC 252
IGD 507 an
CAPACITOR 33PF
filtronic Solid State
33id
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SSG 23 TRANSISTOR
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors
Text: FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)
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FPD1500DFN
1850MHZ)
2002/95/EC)
FPD1500DFN
MIL-STD-1686
MIL-HDBK-263.
EB1500DFN-BB
900MHz
EB1500DFN-BA
SSG 23 TRANSISTOR
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 135
TRANSISTOR BC 157
EB1500DFN-BA
EB1500DFN-BB
FPD750SOT89
MIL-HDBK-263
Filtronic Compound Semiconductors
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FPD1500
Abstract: MIL-HDBK-263 PAD130
Text: FPD1500 1W POWER PHEMT Datasheet v2.1 FEATURES: • • • • • LAYOUT: 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an
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FPD1500
FPD1500
22A114.
MIL-STD-1686
MIL-HDBK-263.
MIL-HDBK-263
PAD130
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FPD1500
Abstract: MIL-HDBK-263 P100
Text: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND
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FPD1500
FPD1500
MIL-HDBK-263
P100
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b 857 W3
Abstract: fpd200p70 transistor marking code 1325 18GHZ TL11 TL22 VG07 filtronic Solid State
Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT PACKAGE FEATURES: • • • • • • Data sheet v2.3 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS GENERAL DESCRIPTION:
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FPD200P70
FPD200P70
26GHz
85GHZ
18GHZ
b 857 W3
transistor marking code 1325
18GHZ
TL11
TL22
VG07
filtronic Solid State
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Transistor BC 1078
Abstract: FPD750SOT89 FPD750SOT89CE FPD750SOT89E S 8550 transistor BC 1078 transistor
Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm
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FPD750SOT89E
FPD750SOT89
FPD750SOT89CE
25mx1500m
FPD750SOT89CE:
FPD750SOT89PCK
FPD750SOT89ESQ
FPD750SOT89ESR
Transistor BC 1078
FPD750SOT89
FPD750SOT89E
S 8550 transistor
BC 1078 transistor
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Filtronic* FPD6836
Abstract: FPD6836 transistor A114
Text: FPD6836 Datasheet v3.0 0.25W POWER PHEMT FEATURES: • • • • • • LAYOUT: 25.5 dBm Output Power P1dB 10 dB Power Gain at 12 GHz 16.5 dB Max Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 24 GHz 50% Power-Added Efficiency 8V Operation GENERAL DESCRIPTION:
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FPD6836
22-A114.
MIL-STD-1686
MILHDBK-263.
Filtronic* FPD6836
FPD6836
transistor A114
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FPD750
Abstract: transistor A114
Text: FPD750 Datasheet v3.0 0.5W POWER PHEMT FEATURES: • • • • • LAYOUT: 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency GENERAL DESCRIPTION: The FPD750
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FPD750
FPD750
OT343all
22-A114.
MIL-STD-1686
MILHDBK-263.
transistor A114
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FPD1500SOT89
Abstract: FPD2250SOT89 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 filtronic 921 J370
Text: FPD2250SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant
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FPD2250SOT89
1850MHZ)
FPD2250SOT89E
FPD2250SOT89
FPD2250SOT89E
FPD2250SOT89CE
FPD1500SOT89
FPD2250SOT89CE
MIL-HDBK-263
filtronic 921
J370
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irf3205 pspice
Abstract: tokin 473 5.5v tokin lcd inverter irf3205 pinout STR Handbook, General electric snubber IRF3205 AD7543 IRF3205 501-0726 lt1339 application note inverter tokin lcd nec
Text: LINEAR TECHNOLOGY NOVEMBER 1997 IN THIS ISSUE… COVER ARTICLE New 16-Bit SO-8 DAC Has 1LSB Max INL and DNL Over Industrial Temperature . 1 Jim Brubaker and William C. Rempfer Issue Highlight . 2 LTC in the News . 2
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16-Bit
500kHz,
LT1581
LT1370:
LTC1504:
500mA
1-800-4-LINEAR
irf3205 pspice
tokin 473 5.5v
tokin lcd inverter
irf3205 pinout
STR Handbook, General electric snubber IRF3205
AD7543
IRF3205
501-0726
lt1339 application note
inverter tokin lcd nec
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FPD1500SOT89CESR
Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD1500SOT89
FPD1500SOT8
FPD1500SOT89
25mx1500m
42dBm
FPD1500SOT89E:
FPD1500SOT89E
FPD1500SOT89CE
EB1500SOT89CE-BC
FPD1500SOT89CESR
FPD1500SOT89E
MIL-HDBK-263
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SC10000
Abstract: diode AN2A
Text: TEKTRONIX INC/ TRI ÖUINT 2bE T> EU Ô^GbSlfl 0000b3û 0 Q T R ü " P 4 2 - U - 0 » ïM û i G ig a B it L o g ic SC10Q00 GaAs Standard Cell Array S C 1 0 0 0 0 D E S C R IP T IO N T h e S C 1 0 0 0 0 S tandard Cell Array is ideal for the developm ent of low power, high perform ance V LS I
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OCR Scan
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0000b3û
SC10Q00
050P3
SC10000
diode AN2A
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