0603 footprint IPC
Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
|
Original
|
PDF
|
FPD3000SOT89
FPD3000SOT8
30dBm
45dBm
FPD3000SOT89
25mx1500m
FPD3000SOT89E:
FPD3000SOT89CE-BD
FPD3000SOT89CE-BE
FPD3000SOT89CE-BG
0603 footprint IPC
FPD3000
TRANSISTOR BC 157
FPD3000SOT89E
|
FPD3000
Abstract: MIL-HDBK-263
Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
|
Original
|
PDF
|
FPD3000
FPD30002W
FPD3000
25mx3000m
12GHz
42dBm
FPD3000-000
MIL-HDBK-263
|
Untitled
Abstract: No abstract text available
Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
|
Original
|
PDF
|
FPD3000
FPD30002W
FPD3000
mx3000Î
12GHz
42dBm
FPD3000-000
|
Untitled
Abstract: No abstract text available
Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m
|
Original
|
PDF
|
FPD3000SOT89CE
FPD3000SOT8
FPD3000SOT89CE
30dBm
FPD3000SOT89CESQ
FPD3000SOT89CESR
FPD3000SOT89PCK
DS111103
85GHz
|
Untitled
Abstract: No abstract text available
Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pm x 3000Pm
|
Original
|
PDF
|
FPD3000SOT89CE
FPD3000SOT8
FPD3000SOT89CE
3000Pm
FPD3000SOT89CESQ
FPD3000SOT89PCK
85GHz
FPD3000SOT89CESR
DS111103
|
FPD3000
Abstract: 9809E DSA002831
Text: FPD3000 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD3000 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD3000 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD3000 discrete p-HEMT device. The
|
Original
|
PDF
|
FPD3000
allows2005
18GHz
9809E
DSA002831
|
FPD3000SOT89
Abstract: No abstract text available
Text: EB3000SOT89BA FPD3000SOT89 1.85GHz PA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 31dBm Output Power 12dB Gain 0.9dB Noise Figure 43dBm OIP3 Bias 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
|
Original
|
PDF
|
EB3000SOT89BA
FPD3000SOT89
85GHz
85GHz
31dBm
43dBm
400mA
85GHz.
FPD3000SOT89;
3000m
|
FPD3000SOT89
Abstract: No abstract text available
Text: EB3000SOT89BB FPD3000SOT89 0.9GHz EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 30dBm Output Power 18dB Gain 1.2dB Noise Figure 41dBm OIP3 @ 22dBm Pout Total Power Bias 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
|
Original
|
PDF
|
EB3000SOT89BB
FPD3000SOT89
85GHz
30dBm
41dBm
22dBm
400mA
FPD3000SOT89;
3000m
30mil
|
fpd3000
Abstract: 3024D FPD3000SOT89
Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m
|
Original
|
PDF
|
FPD3000SOT8
FPD3000SOT89CE
FPD3000SOT89CE
3000m
30dBm
45dBm
FPD3000SOT89CE:
FPD3000SOT89CESQ
FPD3000SOT89CESR
fpd3000
3024D
FPD3000SOT89
|
Untitled
Abstract: No abstract text available
Text: FPD3000 2W POWER PHEMT Datasheet v2.1 FEATURES: • • • • • LAYOUT: 32.5 dBm Linear O/p Power at 12 GHz 6.5 dB Power Gain at 12 GHz 8 dB Maximum Stable Gain at 12 GHz 42 dBm Output IP3 30% Power-Added Efficiency GENERAL DESCRIPTION: The FPD3000 is
|
Original
|
PDF
|
FPD3000
FPD3000
22A114.
MIL-STD-1686
MIL-HDBK-263.
|
FPD3000
Abstract: transistor A114
Text: FPD3000 Datasheet v3.0 2W POWER PHEMT LAYOUT: FEATURES: • • • • • 32.5 dBm Linear O/p Power at 12 GHz 6.5 dB Power Gain at 12 GHz 8 dB Maximum Stable Gain at 12 GHz 42 dBm Output IP3 30% Power-Added Efficiency GENERAL DESCRIPTION: The FPD3000 is
|
Original
|
PDF
|
FPD3000
FPD3000
22-A114.
MIL-STD-1686
MILHDBK-263.
transistor A114
|
TRANSISTOR BC 298
Abstract: bc 2878 transistor transistor BC 568 FPD3000SOT89 FPD3000SOT89E transistor BC 8050 bc 2878 fpd3000 bd 8050 TRANSISTOR
Text: FPD3000SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant
|
Original
|
PDF
|
FPD3000SOT89
1850MHZ)
FPD3000SOT89E:
2002/95/EC)
FPD3000SOT89
FPD3000SOT89E
22-A114.
J-STD-020C,
TRANSISTOR BC 298
bc 2878 transistor
transistor BC 568
FPD3000SOT89E
transistor BC 8050
bc 2878
fpd3000
bd 8050 TRANSISTOR
|
FPD3000SOT89
Abstract: FPD3000SOT89E InGaAs hemt biasing
Text: FPD3000SOT89E FPD3000SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm
|
Original
|
PDF
|
FPD3000SOT89E
FPD3000SOT8
FPD3000SOT89E
25mx1500m
FPD3000SOT89E:
FPD3000SOT89PCK
FPD3000SOT89ESQ
DS100630
FPD3000SOT89
InGaAs hemt biasing
|
FPD3000SOT89E
Abstract: FPD3000SOT89CE FPD3000SOT89 micro transistor 1203 EB3000SOT89-BC
Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
|
Original
|
PDF
|
FPD3000SOT89
FPD3000SOT8
30dBm
45dBm
FPD3000SOT89
25mx1500m
FPD3000SOT89E:
FPD3000SOT89CE
EB3000SOT89-BC
FPD3000SOT89E
FPD3000SOT89CE
micro transistor 1203
EB3000SOT89-BC
|
|
|
FPD3000SOT89
Abstract: 9421
Text: EB3000SOT89BC FPD3000SOT89 2.0GHz PA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.0 2.2 29.5 29.0 12.0 11.5 0.9 0.9 43.5 43.0 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
|
Original
|
PDF
|
EB3000SOT89BC
FPD3000SOT89
400mA
FPD3000SOT89;
3000m
30mil
31mil
9421
|
FPD3000
Abstract: FPD3000SOT89 FPD3000SOT89E MIL-HDBK-263 0J-60
Text: FPD3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 30 dBm Output Power (P1dB) ♦ 13 dB Small-Signal Gain (SSG) ♦ 1.3 dB Noise Figure ♦ 45 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD3000SOT89E
|
Original
|
PDF
|
FPD3000SOT89
FPD3000SOT89E
FPD3000SOT89
FPD3000
FPD3000SOT89E
MIL-HDBK-263
0J-60
|
FPD3000P100
Abstract: No abstract text available
Text: FPD3000P100 2W PACKAGED POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power ♦ 17 dB Power Gain at 2 GHz ♦ 9.5 dB Maximum Stable Gain at 10 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility
|
Original
|
PDF
|
FPD3000P100
FPD3000P100
|
Untitled
Abstract: No abstract text available
Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT 0.47mmx0.83mm Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
|
Original
|
PDF
|
FPD3000
FPD30002W
47mmx0
FPD3000
mx3000Î
12GHz
42dBm
|
2.4GHz amplifier schematic
Abstract: FPD3000 transistor 2.4GHz amplifier schematic FPD3000SOT89
Text: EB3000SOT89BE FPD3000SOT89 2.4GHz PA EVALUATION BOARD DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively matched at a frequency of 2.4 to 2.6GHz. The active device is a FPD3000SOT89 3000 m gate periphery PHEMT. The connectors are SMA jacks soldered to a 30mil
|
Original
|
PDF
|
EB3000SOT89BE
FPD3000SOT89
FPD3000SOT89
3000m
30mil
2.4GHz amplifier schematic
FPD3000
transistor 2.4GHz amplifier schematic
|
FPD3000
Abstract: MIL-HDBK-263 P100 Au Sn eutectic
Text: FPD3000 2W POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power at 12 GHz ♦ 6.5 dB Power Gain at 12 GHz ♦ 8 dB Maximum Stable Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 30% Power-Added Efficiency DRAIN BOND PAD 4X SOURCE BOND PAD (2x) GATE BOND PAD (4X)
|
Original
|
PDF
|
FPD3000
FPD3000
MIL-HDBK-263
P100
Au Sn eutectic
|
transistor BC 568
Abstract: transistor horizontal c 5802 transistor BC 388 bc 2878 transistor 275 v 593 BC 1325
Text: FPD3000SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant
|
Original
|
PDF
|
FPD3000SOT89
1850MHZ)
FPD3000SOT89E:
2002/95/EC)
FPD3000SOT89
22-A114.
J-STD-020C,
transistor BC 568
transistor horizontal c 5802
transistor BC 388
bc 2878 transistor
275 v 593 BC 1325
|
Filtronic
Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15
|
Original
|
PDF
|
FPD3000
FPD2250
FPD1500
FPD1050
FPD750
FPD6836
FPD200
FPD7612
EPA240B
EPA160B
Filtronic
EUDYNA
fpd6836
epa018a
FPD750
ph15 transistor
FLC087XP
FPD3000
FPD7612
FPD1500
|
FPD3000P100
Abstract: FPD750P100
Text: FPD750P100 0.5W PACKAGED POWER PHEMT • FEATURES ♦ 26.5 dBm Linear Output Power ♦ 18.5 dB Power Gain at 2 GHz ♦ 11.5 dB Maximum Stable Gain at 10 GHz ♦ 36 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor
|
Original
|
PDF
|
FPD750P100
FPD750P100
FPD3000P100
|
VCO-102
Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high
|
Original
|
PDF
|
|
