9421
Abstract: FPD2250SOT89
Text: EB2250SOT89BB FPD2250SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured at 900MHz 28dBm Output Power 17dB Gain 39dBm OIP3 @ 18dBm Pout Total Power Noise Figure 1.2dB Bias 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB2250SOT89BB
FPD2250SOT89
900MHz
28dBm
39dBm
18dBm
300mA
FPD2250SOT89;
2250m
30mil
9421
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Bond
Abstract: power amplifier mmic
Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four
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FMM5829X
39dBm
FMM5829X
Bond
power amplifier mmic
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Bach
Abstract: Eudyna Devices X BAND power amplifiers power amplifier 800mA ED-4701 FMM5829X UF 600m power amplifier mmic
Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four
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FMM5829X
39dBm
FMM5829X
1906B,
Bach
Eudyna Devices X BAND power amplifiers
power amplifier 800mA
ED-4701
UF 600m
power amplifier mmic
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Untitled
Abstract: No abstract text available
Text: EMM5840X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 25 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION
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EMM5840X
39dBm
EMM5840X
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EIA1415-8P
Abstract: 7371711
Text: Excelics EIA1415-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.4-15.35GHz, 8W Internally Matched Power FET • • • • • 14.4-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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EIA1415-8P
35GHz,
35GHz
39dBm
35GHz
6240mA
720mA
120mA
EIA1415-8P
7371711
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Untitled
Abstract: No abstract text available
Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF
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SGA9189Z
OT-89
SGA9189Z
39dBm,
SGA9189Zâ
SGA9189ZSQ
SGA9189ZSR
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AM357039UM-2H
Abstract: No abstract text available
Text: Power Amplifier Module 3.5 – 7.0GHz, 21dB, 8W AM357039UM-2H January 2014 Rev1 DESCRIPTION AMCOM’s AM357039UM-2H is a broadband GaAs Power Amplifier Module. It has a nominal CW performance of 21dB small signal gain, and 39dBm 8W saturated output power
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AM357039UM-2H
AM357039UM-2H
39dBm
39dBm
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EMM5840X
Abstract: Harbour Industries UTC 393
Text: EMM5840X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 25 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION
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EMM5840X
39dBm
EMM5840X
Harbour Industries
UTC 393
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Untitled
Abstract: No abstract text available
Text: Coaxial ZHL-03-5WF+ ZHL-03-5WF High Power Amplifier 50Ω 5W 60to300MHz Features •Highpower,+39dBmtyp. •Lownoiseigure,3dBtyp. •HighIP3,+49dBmtyp. •ClassAampliier •Availabewithbuilt-infanwiththermalshut-off
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ZHL-03-5WF+
ZHL-03-5WF
39dBmà
ZHL-03-5WF(
ZHL-03-5WFX(
CP641
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Untitled
Abstract: No abstract text available
Text: Coaxial High Power Amplifier 50Ω 5W ZHL-03-5WF+ 60 to 300 MHz Features • • • • • High power, +39dBm typ. Low noise figure, 3 dB typ. High IP3, +49 dBm typ. Class A amplifier Availabe with built-in fan with thermal shut-off Model No. Case Style
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ZHL-03-5WF+
39dBm
ZHL-03-5WFX+
CP641
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ZHL-03-5WF
Abstract: No abstract text available
Text: Coaxial High Power Amplifier 50Ω 5W ZHL-03-5WF 60 to 300 MHz Features • High power, +39dBm typ. • Low noise figure, 3 dB typ. • High IP3, +49 dBm typ. • Class A amplifier • Availabe with built-in fan with thermal shut-off Model No. Case Style Connectors
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ZHL-03-5WF
39dBm
ZHL-03-05WFX
CP641
ZHL-03-5WF
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EIA1314A-8P
Abstract: No abstract text available
Text: Excelics EIA1314A-8P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 8W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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EIA1314A-8P
39dBm
6240mA
720mA
120mA
38dBm
175oC
150oC
-65/175oC
EIA1314A-8P
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power amplifier mmic
Abstract: No abstract text available
Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION
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FMM5829X
39dBm
FMM5829X
power amplifier mmic
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MC2006
Abstract: MC2006WAFER MC2006DIE
Text: PIN Pre-amplifier MC2006 CMOS PIN Pre-amplifier with AGC for long-reach fiber-optics based 155Mbps ATM/SONET Main Features: General Description: Min. -39dBm sensitivity, +3dBm saturation at 155Mbps when used with 0.9A/W InGaAs PINs. BER 10-10 . Fabricated in standard high-volume CMOS
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MC2006
155Mbps
-39dBm
155Mbps
622Mbps,
25Gbps.
MC2006
MC2006WAFER
MC2006DIE
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ZHL-03-5WF
Abstract: No abstract text available
Text: Coaxial High Power Amplifier 50Ω 5W ZHL-03-5WF 60 to 300 MHz Features • High power, +39dBm typ. • Low noise figure, 3 dB typ. • High IP3, +49 dBm typ. • Class A amplifier • Availabe with built-in fan with thermal shut-off Model No. Case Style Connectors
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ZHL-03-5WF
39dBm
ZHL-03-05WFX
CP641
ZHL-03-5WFX
ZHL-03-5WF
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EGN21A045IV
Abstract: hpa L-band 27 31 GHz HPA GaN amplifier
Text: Eudyna GaN-HEMT 45W Preliminary EGN21A045IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 16dB typ. at Pout=39dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=39dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz
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EGN21A045IV
39dBm
2200MHz
EGN21A045IV
hpa L-band
27 31 GHz HPA
GaN amplifier
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TA099-107-41-40
Abstract: No abstract text available
Text: TA099-107-41-40 PRE1_20040412 9.9 - 10.7 GHz 10W Amplifier FEATURES • • • • P-1dB: 39dBm Small Signal Gain: 42dB TTL Control Power Turn ON/OFF: 1ìS Bias Condition: 7A @ 12V DESCRIPTION The TA099-107-41-40 is a 10W power amplifier designed for high linearity applications in the 9.9 to
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TA099-107-41-40
39dBm
TA099-107-41-40
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GaAs FETs
Abstract: No abstract text available
Text: FLM6472-8D F| «e . r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz
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FLM6472-8D
39dBm
-45dBc
28dBm
FLM6472-8D
Temperature31
GaAs FETs
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Untitled
Abstract: No abstract text available
Text: FLM6472-8D Internally Matched Power GaAs FETs RI lîrrQi r UJ11jU FEATURES • • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-8D
UJ11jU
39dBm
-45dBc
28dBm
FLM6472-8D
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FLM5359-8C
Abstract: flm5
Text: FLM5359-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM5359-8C
39dBm
FLM5359-8C
flm5
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Untitled
Abstract: No abstract text available
Text: FLM7785-8D FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 26% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q
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FLM7785-8D
39dBm
-45dBc
28dBm
FLM7785-8D
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Untitled
Abstract: No abstract text available
Text: Filmali FLM3742-8C r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P1dB = 39dBm Typ. High Gain: G1dB = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM3742-8C
39dBm
FLM3742-8C
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Untitled
Abstract: No abstract text available
Text: FLM3742-8E m frT C II r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q
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FLM3742-8E
UJ11bU
39dBm
-45dBc
28dBm
FLM3742-8E
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FLM7177-8C
Abstract: No abstract text available
Text: FLM7177-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM7177-8C
39dBm
7177-8C
FLM7177-8C
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