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    FPD2250SOT89CE Search Results

    FPD2250SOT89CE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FPD2250SOT89CE Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF

    FPD2250SOT89CE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FPD1500SOT89

    Abstract: FPD2250SOT89 FPD2250SOT89CE MIL-HDBK-263 FPD2250SOT FPD2250
    Text: FPD2250SOT89CE FPD2250SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency


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    PDF FPD2250SOT89CE FPD2250SOT8 FPD2250SOT89CE: 31dBm 44dBm FPD2250SOT89CE 25mx1500m EB2250SOT89CE-BC FPD2250SOT89CECE FPD1500SOT89 FPD2250SOT89 MIL-HDBK-263 FPD2250SOT FPD2250

    FPD1500SOT89

    Abstract: FPD2250SOT89 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 filtronic 921 J370
    Text: FPD2250SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant


    Original
    PDF FPD2250SOT89 1850MHZ) FPD2250SOT89E FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE FPD1500SOT89 FPD2250SOT89CE MIL-HDBK-263 filtronic 921 J370

    pseudomorphic HEMT

    Abstract: FPD1500SOT89 FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250
    Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT RoHS Compliant and Pb-Free Package: SOT89 Product Description Features The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original
    PDF FPD2250SOT89 FPD2250SOT8 FPD2250SOT89 25mx1500m 31dBm 44dBm FPD2250SOT89CE EBD2250SOT89CE-AB EBD2250SOT89CE-BB EBD2250SOT89CE-AA pseudomorphic HEMT FPD1500SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250

    FPD1500SOT89

    Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures
    Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency


    Original
    PDF FPD2250SOT89 FPD2250SOT8 FPD2250SOT89E: 31dBm 44dBm FPD2250SOT89 25mx1500m FPD2250SOT89E EB2250SOT89CE EB2250SOT89CE-BC FPD1500SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures

    FPD2250

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 157 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 FPD1500SOT89 FPD2250SOT89 Filtronic Compound Semiconductors FPD2250SOT
    Text: FPD2250SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • Datasheet v2.3 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant


    Original
    PDF FPD2250SOT89 1850MHZ) FPD2250SOT89E FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE FPD2250 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 157 FPD2250SOT89CE MIL-HDBK-263 FPD1500SOT89 Filtronic Compound Semiconductors FPD2250SOT