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    FPD200P70 Search Results

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    FPD200P70 Price and Stock

    RF Micro Devices Inc FPD200P70

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FPD200P70 1
    • 1 $25.35
    • 10 $25.35
    • 100 $25.35
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    FPD200P70 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FPD200P70 Filtronic Hi-frequency Packaged pHEMT Original PDF

    FPD200P70 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FPD200P70

    Abstract: transistor marking code 1325 RO29 "IPC 1752" gold L130
    Text: FPD200P70 Data sheet v4.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:


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    PDF FPD200P70 26GHz FPD200P70 J-STD-020C, transistor marking code 1325 RO29 "IPC 1752" gold L130

    b 857 W3

    Abstract: fpd200p70 transistor marking code 1325 18GHZ TL11 TL22 VG07 filtronic Solid State
    Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT PACKAGE FEATURES: • • • • • • Data sheet v2.3 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS GENERAL DESCRIPTION:


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    PDF FPD200P70 FPD200P70 26GHz 85GHZ 18GHZ b 857 W3 transistor marking code 1325 18GHZ TL11 TL22 VG07 filtronic Solid State

    fpd200p70

    Abstract: No abstract text available
    Text: PRELIMINARY • FPD200P70 HI-FREQUENCY PACKAGED PHEMT PERFORMANCE ♦ 20 dBm Output Power P1dB ♦ 21 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.7 dB Noise Figure at 1.85 GHz ♦ 30 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.85 GHz ♦ Useable Gain to 26 GHz


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    PDF FPD200P70 FPD200P70

    FPD200P70

    Abstract: b 857 W3 18GHZ TL11 TL22 "IPC 1752" gold DSA002486 filtronic Solid State
    Text: FPD200P70 Data sheet v3.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:


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    PDF FPD200P70 FPD200P70 26GHz 85GHZ 18GHZ J-STD-020C, b 857 W3 18GHZ TL11 TL22 "IPC 1752" gold DSA002486 filtronic Solid State

    Untitled

    Abstract: No abstract text available
    Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • Data sheet v2.2 PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:


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    PDF FPD200P70 FPD200P70 26GHz 85GHZ 18GHZ

    FPD200P70

    Abstract: TL11 TL22 l420 FPD200P70SR
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


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    PDF FPD200P70 FPD200P70 25mmx200mm 20dBm 26GHz 15GHz FPD200P70-AJ TL11 TL22 l420 FPD200P70SR

    FPD200P70

    Abstract: No abstract text available
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


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    PDF FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ

    fpd200p70

    Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


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    PDF FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor

    VCO-102

    Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
    Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high


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    rf3826

    Abstract: SBB-3089 RFHA1000 spf-5189 spf-5189z SUF-9000 SPB-2054S RF2815 SBB-1089 rf3931
    Text: 2009 RFMD Aerospace & Defense Product Selection Guide Robust Components for RF, Microwave, and Millimeter Applications Regarded as the partner of choice in the Aerospace, Defense, and Homeland Security industry, RFMD® has earned a global reputation with its product innovation, quality, scalability, and world-class customer support.


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    RF5632

    Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
    Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


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    pnp-1500-p22

    Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
    Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


    Original
    PDF