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    FPD200 Price and Stock

    L3 Harris Narda-Miteq AFPD2-00350055-15-14P-LIM

    AMPLIFIER/LIMITER, DUAL OUTPUT
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    DigiKey AFPD2-00350055-15-14P-LIM Box
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    Omega Engineering FPD2005

    Al Gr Mtr W/Pls 0.5 - 60 Ce Rohs Compliant: Yes |Omega FPD2005
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    Newark FPD2005 Bulk 1 1
    • 1 $4815.21
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    Omega Engineering FPD2004

    Al Gr Mtr W/Pls 0.05 - 20 Ce Rohs Compliant: Yes |Omega FPD2004
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    Newark FPD2004 Bulk 1
    • 1 $2596.05
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    Omega Engineering FPD2002

    Al Gr Mtr W/Pls 0.01 - 2 Ce Rohs Compliant: Yes |Omega FPD2002
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    Newark FPD2002 Bulk 1
    • 1 $1869.66
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    Omega Engineering FPD2003

    Al Gr Mtr W/Pls 0.03- 7 Rohs Compliant: Yes |Omega FPD2003
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    Newark FPD2003 Bulk 1
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    FPD200 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FPD200 Filtronic General Purpose pHEMT Original PDF
    FPD2000AS Filtronic 2w Packaged Power pHEMT Original PDF
    FPD2000AS-EB Filtronic 2W PACKAGED POWER PHEMT Original PDF
    FPD2000V Filtronic 2w Power pHEMT Original PDF
    FPD200P70 Filtronic Hi-frequency Packaged pHEMT Original PDF

    FPD200 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FPD200

    Abstract: MIL-HDBK-263 400x400
    Text: FPD200 GENERAL PURPOSE PHEMT • • DRAIN BOND PAD 1X FEATURES ♦ 19 dBm Linear Output Power at 12 GHz ♦ 12 dB Power Gain at 12 GHz ♦ 17 dB Maximum Stable Gain at 12 GHz ♦ 12 dB Maximum Stable Gain at 18 GHz ♦ 45% Power-Added Efficiency SOURCE


    Original     		FPD200 FPD200is FPD200 MIL-HDBK-263 400x400 PDF

    FPD200P70

    Abstract: transistor marking code 1325 RO29 "IPC 1752" gold L130
    Text: FPD200P70 Data sheet v4.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:


    Original     		FPD200P70 26GHz FPD200P70 J-STD-020C, transistor marking code 1325 RO29 "IPC 1752" gold L130 PDF

    b 857 W3

    Abstract: fpd200p70 transistor marking code 1325 18GHZ TL11 TL22 VG07 filtronic Solid State
    Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT PACKAGE FEATURES: • • • • • • Data sheet v2.3 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS GENERAL DESCRIPTION:


    Original     		FPD200P70 FPD200P70 26GHz 85GHZ 18GHZ b 857 W3 transistor marking code 1325 18GHZ TL11 TL22 VG07 filtronic Solid State PDF

    fpd200p70

    Abstract: No abstract text available
    Text: PRELIMINARY • FPD200P70 HI-FREQUENCY PACKAGED PHEMT PERFORMANCE ♦ 20 dBm Output Power P1dB ♦ 21 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.7 dB Noise Figure at 1.85 GHz ♦ 30 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.85 GHz ♦ Useable Gain to 26 GHz


    Original     		FPD200P70 FPD200P70 PDF

    FPD200

    Abstract: FPD200 DIE
    Text: FPD200 GENERAL PURPOSE PHEMT DIE Datasheet v2.1 FEATURES: • • • • • LAYOUT: 19 dBm Output Power P1dB 12 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:


    Original     		FPD200 FPD200 22A114. MIL-STD-1686 MIL-HDBK-263. FPD200 DIE PDF

    EV-SP-000044-001

    Abstract: FPD200 CB100 FPD20 FPD2000AS RO4003 cw 7687 A114 es IPC 9701 W2020
    Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features „ „ „ „ „ Optimum Technology Matching Applied „ GaAs HBT „ GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT


    Original     		FPD2000AS 33dBm 46dBm FPD2000AS 85GHz) EB2000AS-AA DS100125 EV-SP-000044-001 FPD200 CB100 FPD20 RO4003 cw 7687 A114 es IPC 9701 W2020 PDF

    FPD200P70

    Abstract: b 857 W3 18GHZ TL11 TL22 "IPC 1752" gold DSA002486 filtronic Solid State
    Text: FPD200P70 Data sheet v3.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:


    Original     		FPD200P70 FPD200P70 26GHz 85GHZ 18GHZ J-STD-020C, b 857 W3 18GHZ TL11 TL22 "IPC 1752" gold DSA002486 filtronic Solid State PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • Data sheet v2.2 PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:


    Original     		FPD200P70 FPD200P70 26GHz 85GHZ 18GHZ PDF

    FPD200P70

    Abstract: TL11 TL22 l420 FPD200P70SR
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		FPD200P70 FPD200P70 25mmx200mm 20dBm 26GHz 15GHz FPD200P70-AJ TL11 TL22 l420 FPD200P70SR PDF

    FPD200

    Abstract: MIL-HDBK-263
    Text: FPD200 Datasheet v3.0 GENERAL PURPOSE PHEMT DIE LAYOUT: FEATURES: • • • • • 19 dBm Output Power P1dB 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:


    Original     		FPD200 FPD200 MIL-HDBK-263 PDF

    fpd2000as

    Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
    Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized


    Original     		FPD2000AS FPD2000AS 33dBm 46dBm 85GHz) EB2000AS-AA 14GHz) EB2000AS-AD EB2000AS-AG FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise PDF

    FPD200

    Abstract: No abstract text available
    Text: FPD200 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD200 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD200 TOM3 and TOM2 Models 24/01/2005 Introduction This report describes the models for the FPD200 discrete p-HEMT device. The


    Original     		FPD200 28GHz 25GHz PDF

    A114

    Abstract: A115 FPD2000V JESD22 Au Sn eutectic
    Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V


    Original     		FPD2000V FPD2000V A114 A115 JESD22 Au Sn eutectic PDF

    FPD200 DIE

    Abstract: No abstract text available
    Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,


    Original     		FPD200 FPD200General FPD200 mx200Î 19dBm 12GHz 18GHz FPD200-000 DS090519 FPD200 DIE PDF

    transistor A114

    Abstract: transistor a114 diagram A114 transistor transistor a115
    Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V


    Original     		FPD2000V FPD2000V transistor A114 transistor a114 diagram A114 transistor transistor a115 PDF

    FPD200P70

    Abstract: No abstract text available
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ PDF

    fpd200p70

    Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor PDF

    transistor marking code 1325

    Abstract: vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a FPD2000AS ipc 9701 filtronic Solid State
    Text: FPD2000AS Datasheet v2.4 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz


    Original     		FPD2000AS FPD2000AS J-STD-020C, transistor marking code 1325 vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a ipc 9701 filtronic Solid State PDF

    FPD200

    Abstract: FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000
    Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,


    Original     		FPD200 FPD200General FPD200 25mx200m 19dBm 12GHz 18GHz FPD200-000 DS090519 FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000 PDF

    Filtronic

    Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
    Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15


    Original     		FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500 PDF

    transistor marking code 1325

    Abstract: FPD2000AS filtronic Solid State
    Text: FPD2000AS Datasheet v3.0 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz


    Original     		FPD2000AS FPD2000AS J-STD-020C, transistor marking code 1325 filtronic Solid State PDF

    transistor P2F

    Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original     		FPD2000AS FPD2000AS 350mA transistor P2F p2f 250 PHEMT marking code a p2F 45 MIL-HDBK-263 40 P1dB 2W transistor marking code 1325 PDF

    VCO-102

    Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
    Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		FPD2000AS FPD2000AS 350mA PDF