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    26GHZ Search Results

    26GHZ Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    HMC850LC3TR Analog Devices 1:2 Fanout 26GHz Visit Analog Devices Buy
    HMC850LC3TR-R5 Analog Devices 1:2 Fanout 26GHz Visit Analog Devices Buy
    HMC854LC5TR-R5 Analog Devices Mux 4:1, 26GHz Visit Analog Devices Buy
    HMC854LC5TR Analog Devices Mux 4:1, 26GHz Visit Analog Devices Buy
    HMC854LC5 Analog Devices Mux 4:1, 26GHz Visit Analog Devices Buy
    HMC850LC3 Analog Devices 1:2 Fanout 26GHz Visit Analog Devices Buy
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    26GHZ Price and Stock

    Dielectric Laboratories Inc 5G KIT 26GHZ - B259MC1S

    5G 26GHZ FILTER KIT
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    DigiKey 5G KIT 26GHZ - B259MC1S Bulk 5 1
    • 1 $633.75
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    • 10000 $633.75
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    ADLINK Technology Inc DUAL CORE 2.6GHZ LGA-775

    Intel Pentium E5300 MPU, 2MB L2 Cache, 2.60GHz, 800MHz FSB - Bulk (Alt: DUAL CORE 2.6GHZ L)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas DUAL CORE 2.6GHZ LGA-775 Bulk 13 Weeks 1
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    ADLINK Technology Inc CELERON E3400 2.6GHZ LGA7

    CPU INTEL CELERON PROCESSOR E3400, 2.6GHz, 1MB Cache - Bulk (Alt: CELERON E3400 2.6GHZ LGA7)
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    Avnet Americas CELERON E3400 2.6GHZ LGA7 Bulk 13 Weeks 1
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    ADLINK Technology Inc CORE2 DUO 2.26GHZ UFCPGA-478

    CPU CORE2 DUO MOBILE P8400 2.26GHZ,1066MHZ FSB,1.000V-1.250V - Bulk (Alt: CORE2 DUO 2.26GHZ UFCPGA-478)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CORE2 DUO 2.26GHZ UFCPGA-478 Bulk 13 Weeks 1
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    Knowles Corporation 5G Kit 26GHz-B259MC1S

    Signal Conditioning Knowles 5G Kit 26GHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 5G Kit 26GHz-B259MC1S
    • 1 $702.76
    • 10 $614.48
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    26GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    microwave MARCONI

    Abstract: H40P NN12 P35-5123-000-200 MARCONI power
    Text: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm


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    PDF P35-5123-000-200 26GHz 23dBm 24GHz P35-5123-000-200 20-26GHz 20-26GHz. 463/SM/02579/000 microwave MARCONI H40P NN12 MARCONI power

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet SP4T Terminated Ramses SMA 26GHz Normaly open 12Vdc TTL Drive Solder pins PAGE 1/2 ISSUE 16.06.13 PART NUMBER : R574F02420 SERIE : SPnT RF CHARACTERISTICS Number of ways : 4 Frequency range : 0 - 26.5 GHz Impedance : 50 Ohms Frequency GHz


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    PDF 26GHz 12Vdc R574F02420

    sg sf sm

    Abstract: No abstract text available
    Text: Bolt-in Style EMI Filter AVX bolt-in style Pi filters, utilize discoidal capacitor technology to provide effective attenuation in the RF to microwave frequency spectrum from 10MHz to 26GHz. Some versions offer large hex sizes which mean much higher capacitance levels are available and that a 125 VAC/400Hz rating can


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    PDF 10MHz 26GHz. VAC/400Hz MIL-28861 50VDC 100VDC 200VDC/115VAC 400VDC/230VAC 500VDC sg sf sm

    Untitled

    Abstract: No abstract text available
    Text: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V4 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling


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    PDF MASW-004100-1193 50MHz 26GHz 20GHz 33dBm MASW-004100-1193

    Untitled

    Abstract: No abstract text available
    Text: EMR101_C DC – 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC FEATURES • • • • Broadband Performance: DC-26GHz Wide Attenuation Range: 25dB Low Insertion Loss: 2.5dB Good Return Loss: 10dB APPLICATIONS • Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS Ta = 25 °C


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    PDF EMR101 26GHz DC-26GHz 26GHz) 100microns 100microns

    MA4SW510

    Abstract: AN8020
    Text: MA4SW510 HMIC Silicon SP5T PIN Diode Switch RoHS Compliant Rev. V4 Features ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 1dB Insertion Loss , 30dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer


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    PDF MA4SW510 50MHz 26GHz 20GHz MA4SW510 AN8020

    MIL-STD-1686C

    Abstract: 24L-QFN CHS2411-QDG AN0017 s2411 SP4T package 1686C
    Text: CHS2411-QDG RoHS COMPLIANT 23-26GHz Reflective SP4T Switch GaAs Monolithic Microwave IC in QFN package Description The CHS2411-QDG is a monolithic reflective SP4T switch in K-Band. Positive supply voltage only is required. The circuit is manufactured with a standard


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    PDF CHS2411-QDG 23-26GHz CHS2411-QDG 24L-QFN DSCHS2411-QDG8249 MIL-STD-1686C AN0017 s2411 SP4T package 1686C

    MASW-005100-1194

    Abstract: No abstract text available
    Text: MASW-005100-1194 HMIC SP5T Silicon PIN Diode Switch V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 38dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling


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    PDF MASW-005100-1194 50MHz 26GHz 20GHz 33dBm MASW-005100-1194

    CHA5093TCF/24

    Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
    Text: CHA5093TCF 24-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The packaged monolithic microwave IC MMIC is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,


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    PDF CHA5093TCF 24-26GHz 24-26GHz 29dBm DSCHA50932035 04-Feb CHA5093TCF/24 RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate

    Untitled

    Abstract: No abstract text available
    Text: CHA5092 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5092 is a high gain broadband twostage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF


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    PDF CHA5092 22-26GHz CHA5092 22-26GHz 25dBm 400mA DSCHA50928155

    AN0005

    Abstract: CHA5093 CHA5093TCF
    Text: CHA5093TCF 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,


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    PDF CHA5093TCF 22-26GHz 22-26GHz 28dBm DSCHA5093TCF1257 14-Sept-01- AN0005 CHA5093 CHA5093TCF

    Untitled

    Abstract: No abstract text available
    Text: Frequency Doublers F90V 9 to 13GHz Specifications RF Frequency LO Frequency LO Power 9 to 13GHz 18 to 26GHz 16 dBm min 19 dBm typ Transfer Characteristics Conversion Loss LO to RF Isolation Available Package Styles Available Package Styles Surface Mount Available


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    PDF 13GHz 26GHz MXT301, SMXT301

    ultrasonic amplifier circuit diagram

    Abstract: LMA208G
    Text: 2-26GHz PHEMT Amplifier Filtronic LMA208G Solid State Features • • • • • • • • 10dB Typical Gain 19dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Frequency Bandwidth DC Decoupled RF Input and Output Chip Size : 1.986mmX1.082mm .078”X.043”


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    PDF 2-26GHz LMA208G 19dBm 986mmX1 082mm LMA208G 26GHz. 19dBm. ultrasonic amplifier circuit diagram

    TriQuint

    Abstract: 8504
    Text: Advance Product Information 26-29 GHz Intermediate Power Amplifier Key Features and Performance • • • • • TGA9058A-EPU Primary Applications 0.25um pHEMT Technology 26GHz - 29 GHz Frequency Range Nominal Pout 23dBm @ 2dB GC Nominal SS Gain 25dB 5 V Bias


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    PDF TGA9058A-EPU 26GHz 23dBm TGA9058A-EPU TriQuint 8504

    SP5T

    Abstract: C-150 MASW-005100-1194 Microwave PIN diode j6 diode
    Text: Monolithic PIN SP5T Diode Switch MASW-005100-1194 Rev 1 FEATURES • • • • • • Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 dB Insertion Loss 30 dB Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction DESCRIPTION The MASW-005100-1194 is a SP5T Series-Shunt


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    PDF MASW-005100-1194 50MHz 26GHz 20GHz MASW-005100-1194 MASW-005100-11940W SP5T C-150 Microwave PIN diode j6 diode

    attenuator 30db data sheet

    Abstract: No abstract text available
    Text: EMR101_A DC – 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC FEATURES • • • • Broadband Performance: DC-26GHz Wide Attenuation Range: 25dB Low Insertion Loss: 2.5dB Good Return Loss: 10dB APPLICATIONS • Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS Ta = 25 °C


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    PDF EMR101 26GHz DC-26GHz 26GHz) 100microns attenuator 30db data sheet

    Untitled

    Abstract: No abstract text available
    Text: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant Rev. 3 Features ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer Protective Coating


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    PDF MA4SW410 50MHz 26GHz 20GHz MA4SW410

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet SP6T Terminated Ramses SMA 26GHz Normaly open 12Vdc Positive common D-Sub connector PAGE 1/2 ISSUE 16.06.13 PART NUMBER : R574F02615 SERIE : SPnT RF CHARACTERISTICS Number of ways : 6 Frequency range : 0 - 26.5 GHz Impedance : 50 Ohms


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    PDF 26GHz 12Vdc R574F02615

    transistor A1267

    Abstract: a1267 A1267 transistor ENA1267 a1267* transistor A1267 data sheet A-1267 a1267* transistor datasheet
    Text: EC4H09C Ordering number : ENA1267 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H09C UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • High cut-off frequency : fT=26GHz typ VCE=3V . Low operating voltage.


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    PDF EC4H09C ENA1267 26GHz S21e2 A1267-3/3 transistor A1267 a1267 A1267 transistor ENA1267 a1267* transistor A1267 data sheet A-1267 a1267* transistor datasheet

    A1267

    Abstract: A-1267 EC4H09C ECSP1008-4 S21E2
    Text: EC4H09C 注文コード No. N A 1 2 6 7 三洋半導体データシート N EC4H09C NPN エピタキシァルプレーナ型シリコントランジスタ UHF ~ X バンド低雑音増幅 , 発振用 特長 ・しゃ断周波数が高い:fT=26GHz typ VCE=3V 。


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    PDF EC4H09C 26GHz S21e2 IT13892 IT13891 IT13900 A1267 A-1267 EC4H09C ECSP1008-4

    LMA208C

    Abstract: No abstract text available
    Text: 2-26 GHz PHEMT Amplifier Filtronic LMA208C Solid State Features • • • • • • • • 9dB Typical Gain 18dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Frequency Bandwidth DC Decoupled RF Input and Output Chip Size : 1.986mmX1.082mm .078”X.043”


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    PDF LMA208C 18dBm 2-26GHz 986mmX1 082mm LMA208C 26GHz. 19dBm. t80/20

    MASW-004100-11930G

    Abstract: MASW-004100-11930W
    Text: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling


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    PDF MASW-004100-1193 50MHz 26GHz 20GHz 33dBm MASW-004100-1193 MASW-004100-11930G MASW-004100-11930W

    Untitled

    Abstract: No abstract text available
    Text: Advanced Control Components designs custom switch matrices for the most demanding applications with frequency ranges up to 26GHz. Listed below are a number of examples. Detailed specifications are available at our website www.advanced-control.com, by request from the factory or your local sales representative. Contact the factory for


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    PDF 26GHz. ACMX-A415 X-A401 ACMX-A416 ACMX-A407 ACMX-A408 ACMX-A417 ACMX-A418

    sealectro

    Abstract: 50-607-3188-31 50-607-3141-31 50-651-0000-31
    Text: RF Connectors SMA Series SMA Subminiature RF Connectors SMA connectors are the de-facto standard mediumpower coaxial cable connectors for military and microwave applications. They transmit radio fre­ quencies and mirowaves up to 18GHz with low VSWR, and are usable up to 26GHz. All meet the


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    PDF 18GHz 26GHz. MIL-C-39012, sealectro 50-607-3188-31 50-607-3141-31 50-651-0000-31