Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FPD2250SOT89 Search Results

    SF Impression Pixel

    FPD2250SOT89 Price and Stock

    FILTRONETICS Inc FPD2250SOT89

    Si, N-CHANNEL, RF POWER, HEMFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FPD2250SOT89 490
    • 1 $6
    • 10 $6
    • 100 $2.6
    • 1000 $2.4
    • 10000 $2.4
    Buy Now

    FPD2250SOT89 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FPD2250SOT89 Filtronic Low Noise High Linearity Packaged pHEMT Original PDF
    FPD2250SOT89CE Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF
    FPD2250SOT89E Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF

    FPD2250SOT89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FPD2250SOT89

    Abstract: FPD2250
    Text: Balanced EBD2250SOT89-AA FPD2250SOT89 1.85GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 1.7 1.85 31.4 31.2 15.2 14.8 0.9 0.9 43.0 44.0 5V, 150mA DESCRIPTION AND APPLICATIONS The data given above is based on measurements taken on the evaluation board described


    Original
    PDF EBD2250SOT89-AA FPD2250SOT89 85GHz 150mA 1700MHz FPD2250SOT89; 150mA FPD2250

    9421

    Abstract: FPD2250SOT89
    Text: EB2250SOT89BB FPD2250SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured at 900MHz 28dBm Output Power 17dB Gain 39dBm OIP3 @ 18dBm Pout Total Power Noise Figure 1.2dB Bias 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original
    PDF EB2250SOT89BB FPD2250SOT89 900MHz 28dBm 39dBm 18dBm 300mA FPD2250SOT89; 2250m 30mil 9421

    FPD2250

    Abstract: FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 Filtronic Components
    Text: FPD2250SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 29 dBm Output Power (P1dB) ♦ 14 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD2250SOT89E


    Original
    PDF FPD2250SOT89 FPD2250SOT89E FPD2250SOT89 FPD2250 FPD2250SOT89E MIL-HDBK-263 Filtronic Components

    FPD1500SOT89

    Abstract: FPD2250SOT89 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 filtronic 921 J370
    Text: FPD2250SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant


    Original
    PDF FPD2250SOT89 1850MHZ) FPD2250SOT89E FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE FPD1500SOT89 FPD2250SOT89CE MIL-HDBK-263 filtronic 921 J370

    FPD1500SOT89

    Abstract: FPD2250SOT89 FPD2250SOT89CE MIL-HDBK-263 FPD2250SOT FPD2250
    Text: FPD2250SOT89CE FPD2250SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency


    Original
    PDF FPD2250SOT89CE FPD2250SOT8 FPD2250SOT89CE: 31dBm 44dBm FPD2250SOT89CE 25mx1500m EB2250SOT89CE-BC FPD2250SOT89CECE FPD1500SOT89 FPD2250SOT89 MIL-HDBK-263 FPD2250SOT FPD2250

    41dBm

    Abstract: FPD2250SOT89
    Text: EB2250SOT89BC FPD2250SOT89 2.0GHz PA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 2.0GHz 29dBm Output Power 13dB Gain 41dBm IP3 Noise Figure 1.5dB Bias 5V, 50% Idss DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original
    PDF EB2250SOT89BC FPD2250SOT89 29dBm 41dBm FPD2250SOT89; 2250m 30mil

    pseudomorphic HEMT

    Abstract: FPD1500SOT89 FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250
    Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT RoHS Compliant and Pb-Free Package: SOT89 Product Description Features The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original
    PDF FPD2250SOT89 FPD2250SOT8 FPD2250SOT89 25mx1500m 31dBm 44dBm FPD2250SOT89CE EBD2250SOT89CE-AB EBD2250SOT89CE-BB EBD2250SOT89CE-AA pseudomorphic HEMT FPD1500SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250

    2.4GHz amplifier schematic

    Abstract: 2.4GHz amplifier layout FPD2250 transistor 2.4GHz amplifier schematic FPD2250SOT89
    Text: EB2250SOT89BE FPD2250SOT89 2.4GHz PA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.2 2.4 30.0 30.0 11.5 11.0 1.2 1.5 41.0 41.0 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original
    PDF EB2250SOT89BE FPD2250SOT89 300mA FPD2250SOT89; 2250m 30mil 2.4GHz amplifier schematic 2.4GHz amplifier layout FPD2250 transistor 2.4GHz amplifier schematic

    FPD1500SOT89

    Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures
    Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency


    Original
    PDF FPD2250SOT89 FPD2250SOT8 FPD2250SOT89E: 31dBm 44dBm FPD2250SOT89 25mx1500m FPD2250SOT89E EB2250SOT89CE EB2250SOT89CE-BC FPD1500SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures

    FPD2250SOT89

    Abstract: FPD2250
    Text: EB2250SOT89BA FPD2250SOT89 1.85GHz EVALUATION BOARD FEATURES Measured Noise Figure 1.00 0.80 N.F. dB • • ¥ ¥ ¥ Measured @ 1.85GHz 29dBm Output Power 14.5dB Gain 42dBm OIP3 Noise Figure 0.7dB Bias 5V, 300mA 0.60 0.40 0.20 N.F.1 (dB) 0.00 N.F.2(dB)


    Original
    PDF EB2250SOT89BA FPD2250SOT89 85GHz 85GHz 29dBm 42dBm 300mA 85GHz. FPD2250SOT89; 2250m FPD2250

    FPD2250

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 157 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 FPD1500SOT89 FPD2250SOT89 Filtronic Compound Semiconductors FPD2250SOT
    Text: FPD2250SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • Datasheet v2.3 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant


    Original
    PDF FPD2250SOT89 1850MHZ) FPD2250SOT89E FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE FPD2250 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 157 FPD2250SOT89CE MIL-HDBK-263 FPD1500SOT89 Filtronic Compound Semiconductors FPD2250SOT

    FPD2250DFN

    Abstract: FPD2250SOT89 MIL-HDBK-263
    Text: FPD2250DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 29 dBm Output Power (P1dB) ♦ 16.5 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original
    PDF FPD2250DFN FPD2250DFN FPD2250SOT89 MIL-HDBK-263

    RF5632

    Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
    Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


    Original
    PDF

    pnp-1500-p22

    Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
    Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


    Original
    PDF