FPD200P70
Abstract: transistor marking code 1325 RO29 "IPC 1752" gold L130
Text: FPD200P70 Data sheet v4.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:
|
Original
|
PDF
|
FPD200P70
26GHz
FPD200P70
J-STD-020C,
transistor marking code 1325
RO29
"IPC 1752" gold
L130
|
b 857 W3
Abstract: fpd200p70 transistor marking code 1325 18GHZ TL11 TL22 VG07 filtronic Solid State
Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT PACKAGE FEATURES: • • • • • • Data sheet v2.3 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS GENERAL DESCRIPTION:
|
Original
|
PDF
|
FPD200P70
FPD200P70
26GHz
85GHZ
18GHZ
b 857 W3
transistor marking code 1325
18GHZ
TL11
TL22
VG07
filtronic Solid State
|
fpd200p70
Abstract: No abstract text available
Text: PRELIMINARY • FPD200P70 HI-FREQUENCY PACKAGED PHEMT PERFORMANCE ♦ 20 dBm Output Power P1dB ♦ 21 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.7 dB Noise Figure at 1.85 GHz ♦ 30 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.85 GHz ♦ Useable Gain to 26 GHz
|
Original
|
PDF
|
FPD200P70
FPD200P70
|
FPD200P70
Abstract: b 857 W3 18GHZ TL11 TL22 "IPC 1752" gold DSA002486 filtronic Solid State
Text: FPD200P70 Data sheet v3.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:
|
Original
|
PDF
|
FPD200P70
FPD200P70
26GHz
85GHZ
18GHZ
J-STD-020C,
b 857 W3
18GHZ
TL11
TL22
"IPC 1752" gold
DSA002486
filtronic Solid State
|
Untitled
Abstract: No abstract text available
Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • Data sheet v2.2 PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:
|
Original
|
PDF
|
FPD200P70
FPD200P70
26GHz
85GHZ
18GHZ
|
FPD200P70
Abstract: TL11 TL22 l420 FPD200P70SR
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
|
Original
|
PDF
|
FPD200P70
FPD200P70
25mmx200mm
20dBm
26GHz
15GHz
FPD200P70-AJ
TL11
TL22
l420
FPD200P70SR
|
FPD200P70
Abstract: No abstract text available
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
|
Original
|
PDF
|
FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
|
fpd200p70
Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
|
Original
|
PDF
|
FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
w65 transistor
FPD200P70SR
TL11
TL22
"IPC 1752" gold
8GH transistor
L30 type RF microwave power transistor
FPD200P70SB
3400 transistor
|
VCO-102
Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high
|
Original
|
PDF
|
|
rf3826
Abstract: SBB-3089 RFHA1000 spf-5189 spf-5189z SUF-9000 SPB-2054S RF2815 SBB-1089 rf3931
Text: 2009 RFMD Aerospace & Defense Product Selection Guide Robust Components for RF, Microwave, and Millimeter Applications Regarded as the partner of choice in the Aerospace, Defense, and Homeland Security industry, RFMD® has earned a global reputation with its product innovation, quality, scalability, and world-class customer support.
|
Original
|
PDF
|
|
RF5632
Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
|
Original
|
PDF
|
|
pnp-1500-p22
Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
|
Original
|
PDF
|
|
